• 한국산업보건학회지
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• 제26권1호
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• pp.48-57
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• 2016

Objectives: This study was conducted to evaluate the accuracy and precision of airborne metal analysis using polyvinyl chloride(PVC) membrane filter by pretreatment methods. Methods: A total of 75 spiked PVC samples for Cr, Fe and Mn ranged from 6 ug/sample to 40 ug/sample were used to evaluate recovery rates for three pretreatment methods: acid extraction, hot plate ashing and microwave digestion. For Mn, an additional 75 spiked mixed cellulose ester(MCE) membrane filters were analysed to compare the recovery rates of PVC samples. All samples were analysed with an inductively coupled plasma optical emission spectrometer(ICP-OES) and manganese samples were additionally analyzed by atomic absorption spectrometer(AAS). Results: The overall mean recovery rates of PVC samples for Cr, Fe and Mn were 90% or higher regardless of pretreatment methods, but there were statistically significant differences in recovery rates for Cr(p<0.05) and Mn(p<0.01) samples by pretreatment methods. The biases and the coefficient variations of PVC samples for three metals pretreated with three kinds of pretreatment methods ranged from 1.7% to 4.7% and from 1.6% to 6.5%, respectively. The manganese PVC samples pretreated by microwave digestion and analyzed with ICP-OES had the lowest bias at 1.9% and also showed lower bias than the bias for MCE samples, 2.7%. Conclusions: In order to accurately analyze the metals sampled with PVC membrane filters, microwave digestion and ICP-OES can be recommended.

• 한국표면공학회지
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• 제45권4호
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• 분석과학
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• 제27권6호
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• pp.352-356
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• 2014

최근 붕소를 철강에 첨가함으로써 철강의 성질을 개선시키는 여러 연구들이 알려져 있다. 이러한 연구를 위하여 원자 흡광광도법, ICP-OES, ICP-MS에 의한 철강 중 붕소 분석 방법에 관한 연구들이 보고되고 있으며, 철강 중 붕소 정량 시 붕소의 휘발 손실 및 고농도 철 매트릭스로 인한 붕소 분석 방해 등의 어려움이 알려져 있다. 이 연구에서는 붕소의 휘발 손실을 억제 가능한 철강 시료 분해 방법 및 매트릭스 분리과정 없이 ICP-MS에 의하여 철강 내 붕소를 정량할 수 있는 방법을 연구하고자 하였다. 질산-이플루오린화 암모늄을 이용하여 철강 시료 중 붕소의 휘발 손실을 억제하고 시료의 완전 분해가 가능하였으며, ICP-MS에 의하여 다량의 철 매트릭스 중 붕소 정량이 가능하였다. 서로 다른 붕소 함량의 철강 표준물질을 대상으로 시료 분해 및 ICP-MS에 의한 붕소 정량 결과 회수율은 103~111%, 상대표준편차는 5% 이하였으며, 방법검출한계(MDL)는 $1.17{\mu}g/g$ 이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.309-311
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• 2003

The effects of etch parameters on dry etching of BLT thin films were investigated with ICP etch system in $Cl_2$/Ar and $BCl_2/Cl_2$/Ar gas. The etch rate and etch selectivity of BLT films were examined as a function of gas concentration, ICP power, bias power, and pressure. The maximum etch rates of 191.1 nm/min was obtained at the mixed etch condition of $BCl_3(20%)/Cl_2$/Ar, 700 W ICP RF power, 12 mTorr pressure and 400 W substrate RF power. As ICP power and rf power increased, the etch rate of BLT increased. As pressure increased, the etch rate of BLT decreased. The changes of radicals in both $Cl_2$/Ar and $BCl_3/Cl_2$/Ar plasma were measured with using optical emission spectroscopy (OES).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.464-464
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• 2010

A few years ago, for maintaining high stability and production yield of production equipment in a semiconductor fab, on-line monitoring of wafers is required, so that semiconductor manufacturers are investigating a software based process controlling scheme known as virtual metrology (VM). As semiconductor technology develops, the cost of fabrication tool/facility has reached its budget limit, and reducing metrology cost can obviously help to keep semiconductor manufacturing cost. By virtue of prediction, VM enables wafer-level control (or even down to site level), reduces within-lot variability, and increases process capability, $C_{pk}$. In this research, we have practiced VM on $SiO_2$ etch rate with optical emission spectroscopy(OES) data acquired in-situ while the process parameters are simultaneously correlated. To build process model of $SiO_2$ via, we first performed a series of etch runs according to the statistically designed experiment, called design of experiments (DOE). OES data are automatically logged with etch rate, and some OES spectra that correlated with $SiO_2$ etch rate is selected. Once the feature of OES data is selected, the preprocessed OES spectra is then used for in-situ sensor based VM modeling. ICP-RIE using 葰.56MHz, manufactured by Plasmart, Ltd. is employed in this experiment, and single fiber-optic attached for in-situ OES data acquisition. Before applying statistical feature selection, empirical feature selection of OES data is initially performed in order not to fall in a statistical misleading, which causes from random noise or large variation of insignificantly correlated responses with process itself. The accuracy of the proposed VM is still need to be developed in order to successfully replace the existing metrology, but it is no doubt that VM can support engineering decision of "go or not go" in the consecutive processing step.

• 한국식품영양학회지
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• 제29권6호
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• pp.1015-1022
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• 2016

The purpose of this study was to investigate ash and mineral contents of agricultural products that are widely and specifically grown in Korea, including 23 fruits, 11 cereals and specialty crops, and 11 leaves and vegetables. Pre-treatment of mineral was performed by microwave method. Mineral contents were analyzed by Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES) and Inductively Coupled Plasma Spectrophotometry Mass (ICP-MS). Ash contents ranged from 0.20 to 0.69 g/100 g in fruits, 1.62 to 3.80 g/100 g in cereals, and 0.28 to 2.93 g/100 g in leaves and vegetables. Among the 45 samples, the highest contents of ash were found in quinoa (average 3.80 g/100 g), the highest contents of calcium (Ca) were found in Hansan ramie leaves (average 894.79 mg/100 g), the highest contents of phosphorus (P) were found in yellow amaranth(average 661.88 mg/100 g), the highest contents of potassium (K) were found in quinoa (average 1,455.38 mg/100 g), the highest contents of magnesium (Mg) were found in red amaranth (average 434.02 mg/100 g), the highest contents of molybdenum (Mo) were found in moringa (average $482.50{\mu}g/100g$), and the highest contents of selenium (Se) were found in apple mango(average $23.67{\mu}g/100g$).

• 한국표면공학회지
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• 제36권4호
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• pp.334-338
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• 2003

$BCl_3$고밀도 평판형 유도결합 플라즈마(High Density Planar Inductively Coupled Plasma)를 이용하여 AlGaAs와 InGaP의 건식식각에 대하여 연구하였다. 본 실험에서는 ICP 소스파워(0∼500 W), RIE 척 파워(0-150 W), 공정압력(5∼15 mTorr)의 변화에 따른 AlGaAs와 InGaP의 식각률, 식각단면 그리고 표면 거칠기 등을 분석 하였다. 또, 공정 중 OES(Optical Emission Spectroscopy)를 이용하여 in-situ로 플라즈마를 관찰하였다. $BCl_3$ 유도결합 플라즈마를 이용한 AlGaAs의 식각결과는 우수한 수직측벽도와(>87$^{\circ}$) 깨끗하고 평탄한 표면(RMS roughness = 0.57 nm)을 얻을 수 있었다. 반면, InGaP의 경우에는 식각 후 표면이 다소 거칠어진 것을 확인할 수 있었다. 모든 공정조건에서 AlGaAs의 식각률이 InGaP보다 더 높았다. 이는 $BCl_3$ 유도결합 플라즈마를 이용하여 InGaP을 식각하는 동안 $InCl_{x}$ 라는 휘발성이 낮은 식각부산물이 형성되어 나타난 결과이다. ICP 소스파워와 RIE 척파워가 증가하면 AlGaAs와 InGaP모두 식각률이 증가하였지만, 공정압력의 증가는 식각률의 감소를 가져왔다. 그리고 OES peak세기는 공정압력과 ICP 소스파워의 변화에 따라서는 크게 변화하였지만 RIE 척파워에 따라서는 거의 영향을 받지 않았다.

• 한국축산식품학회:학술대회논문집
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• 한국축산식품학회 2001년도 임시총회 및 제28차 추계학술발표회
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• pp.152-152
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• 2001

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.