• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.555-558
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40 V/1 A high-power output for voltage reference of automotive IC. It provides 250kHz PWM (pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated spectre of IC-design-tools and fabricated Dong-bu Hitec 0.35um BD350BA process.

• 마이크로전자및패키징학회지
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• 제20권3호
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• pp.1-6
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• 2013

TSV는 그동안 3D IC 적층을 하는데 핵심 기술로 많이 연구되어 왔고, RC delay를 줄여 소자의 성능을 향상시키고, 전체 시스템 사이즈를 줄일 수 있는 기술로 각광을 받아왔다. 최근에는 TSV를 전기적 연결이 아닌 소자의 열관리를 위한 구조로 연구되고 있다. TSV를 이용한 liquid cooling 시스템 개발은 TSV 제조, TSV 디자인 (aspect ratio, size, distribution), 배선 밀도, microchannel 제조, sealing, 그리고 micropump 제조까지 풀어야 할 과제가 아직 많이 남아있다. 그러나 TSV를 이용한 liquid cooling 시스템은 열관리뿐 아니라 신호 대기시간(latency), 대역폭(bandwidth), 전력 소비(power consumption), 등에 크게 영향을 미치기 때문에 3D IC 적층 기술의 장점을 최대로 이용한 차세대 cooling 시스템으로 지속적인 개발이 필요하다.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2009년도 춘계학술대회
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• pp.523-529
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• 2009

The ACF(Anisotropic Conductive Film) is used for bonding Drive IC and OLED display device panel. If ACF bonding process is problem, a malfunction of line defect can occur. Because electric resistance increase between the panel and drive IC after a period of time, drive IC can not supply enough current to the panel. This paper is studied on a method of test for line defect.

• 한국정보전자통신기술학회논문지
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• 제14권4호
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• pp.275-283
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• 2021

본 연구에서는 저내압 반도체 공정으로 제작 가능한 교류 구동 LED 드라이버 IC를 설계하여, 그 성능들에 대한 시뮬레이션을 수행하였다. 교류 220V에서 직접 구동하기 위한 드라이버 IC를 제작하기 위하여 500V 이상의 항복전압을 만족하는 반도체 제조공정이 필요하다. 고내압 반도체 제조공정은 일반적인 저내압 반도체 공정보다 매우 높은 제조비용을 요구한다. 따라서 낮은 내압의 소자를 구현하는 반도체 공정기술로도 제작할 수 있도록 LED 드라이버 IC를 직렬로 설계하였다. 이는 입력전압이 고전압이라도 각 LED 블록마다 전압이 나누어 인가되는 것을 가능하게 한다. LED 조명회로는 220V에서 96%의 역률을 나타내고 있다. pnp 트랜지스터를 이용한 역률 개선 회로에서는 99.7%의 아주 높은 역률을 얻을 수 있으며, 입력전압의 변동과 관계없이 매우 안정된 동작을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.83-84
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40V/1A high-power output for voltage reference of automotive IC. It provides 250kHz PWM(pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated Spectre of IC Design Tool And fabricated Dong-bu Hitec 0.35um BD350BA process.

• 대한물리의학회지
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• 제14권3호
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• pp.47-53
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• 2019

PURPOSE: This study measured the external pressure on abdomen during maximal inspiration. The study determined the correlation between the diaphragmatic contraction pressure and the lung capacities to verify whether or not the measured pressure values can represent diaphragmatic contractility. METHODS: The study included 32 healthy subjects (16 males and 16 females). The researchers fabricated their own diaphragmatic pressure belt (DiP Belt) to measure DCP. DiP Belt device was fixed on the front of the abdomen and the diaphragmatic contractility was measured during maximal inspiration. The lung capacities were measured using a portable digital spirometer device (Pony Fx, COSMED, Italy). A digital spirometer is a device that is used to test the flow of air entering and exiting the lungs. RESULTS: DCP showed significant positive correlations with vital capacity (VC), inspiratory reserve volume (IRV) and inspiratory capacity (IC). Among values of lung capacities, IC showed especially strong positive correlations with the DCP (r =.714, p<.010). For the males, DCP showed significant positive correlations with IRV and IC, and DCP showed significant negative correlation with the expiratory reserve volume (ERV). For the females, DCP showed significant positive correlation with tidal volume (VT), but any significant correlation was not found with any of the other values of lung capacities. CONCLUSION: DCP showed high correlations with IRV and IC associated with inspiratory capacity. Therefore, The DiP Belt can be looked upon as a simple device that is very useful for measuring diaphragmatic contractility.

• ETRI Journal
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• 제37권6호
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• pp.1165-1175
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• 2015

This paper presents an advanced sensorless permanent magnet (PM) brushless motor controller integrated circuit (IC) employing an automatic lead-angle compensator. The proposed IC is composed of not only a sensorless sine-wave motor controller but also an isolated gate-driver and current self-sensing circuit. The fabricated IC operates in sensorless mode using a position estimator based on a sliding mode observer and an open-loop start-up. For high efficiency PM brushless motor driving, an automatic lead-angle control algorithm is employed, which improves the efficiency of a PM brushless motor system by tracking the minimum copper loss under various load and speed conditions. The fabricated IC is evaluated experimentally using a commercial 200 W PM brushless motor and power switches. The proposed IC is successfully operated without any additional sensors, and the proposed algorithm maintains the minimum current and maximum system efficiency under $0N{\cdot}m$ to $0.8N{\cdot}m$ load conditions. The proposed IC is a feasible sensorless speed controller for various applications with a wide range of load and speed conditions.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.572-575
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• 2009

In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

• 전기전자학회논문지
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• 제8권1호
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• pp.152-159
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• 2004

본 연구에서는 Bi-DMOS 기술을 이용하여 SMPS용 고내압 스윗칭 전력소자 내장형 one-chip PWM IC를 설계하였다. 기준전압회로는 다양한 온도와 공급전압의 변화에도 일정한 전압(5V)을 발생시킬 수 있도록 설계하였고, 오차 증폭기의 경우, 높은 dc gain$({\simeq}65.7db)$, unity frequency$({\simeq}189Khz)$, 적절한 $PM({\simeq}76)$를 가지면서 높은 입력저항을 갖도록 설계하였다. 비교기는 2단 구성으로 설계를 하였고, 삼각파 발생회로 경우, 외부 저항과 캐패시터를 이용해서 발진 주파수(20K), output swing 폭(3.5V)을 갖는 삼각파를 발생시켰다. 스윗칭 파워소자는 SOI 기판을 사용하고, 확장 드레인 영역의 길이와 도핑 농도를 적절히 조정, 350V급 내압을 갖는 n-LDMOSFET을 설계 하였다. 최종적으로, layout은 각 소자에 대한 디자인 룰(2um 설계 룰)을 설정하였고, Bi-DMOS 공정 기술을 바탕으로 PWM IC 회로와 n-LDMOSFET one-chip IC를 설계하였다.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.