• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.555-558
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40 V/1 A high-power output for voltage reference of automotive IC. It provides 250kHz PWM (pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated spectre of IC-design-tools and fabricated Dong-bu Hitec 0.35um BD350BA process.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.1-6
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• 2013

3D integrated circuit(IC) technology with TSV(through Si via) liquid cooling system is discussed. As a device scales down, both interconnect and packaging technologies are not fast enough to follow transistor's technology. 3D IC technology is considered as one of key technologies to resolve a device scaling issue between transistor and packaging. However, despite of many advantages, 3D IC technology suffers from power delivery, thermal management, manufacturing yield, and device test. Especially for high density and high performance devices, power density increases significantly and it results in a major thermal problem in stacked ICs. In this paper, the recent studies of TSV liquid cooling system has been reviewed as one of device cooling methods for the next generation thermal management.

• Proceedings of the Safety Management and Science Conference
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• 2009.04a
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• pp.523-529
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• 2009

The ACF(Anisotropic Conductive Film) is used for bonding Drive IC and OLED display device panel. If ACF bonding process is problem, a malfunction of line defect can occur. Because electric resistance increase between the panel and drive IC after a period of time, drive IC can not supply enough current to the panel. This paper is studied on a method of test for line defect.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.275-283
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• 2021

In this study, a driver IC for an AC-powered LED that can be manufactured with a low voltage semiconductor process is designed and the performances of the driver IC were simulated. In order to manufacture a driver IC that operates directly at AC 220V, a semiconductor manufacturing process that satisfies a breakdown voltage of 500V or higher is required. A semiconductor manufacturing process for a high-voltage device requires a much higher manufacturing cost than a general semiconductor process for a low-voltage device. Therefore, the LED driver IC is designed in series so that it can be manufactured with semiconductor process technology that implements a low-voltage device. This makes it possible to divide and apply the voltage to each LED block even if the input voltage is high. The LED lighting circuit shows a power factor of 96% at 220V. In the pnp transistor circuit, a very high power factor of 99.7% can be obtained, and it shows a very stable operation regardless of the fluctuation of the input voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.83-84
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40V/1A high-power output for voltage reference of automotive IC. It provides 250kHz PWM(pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated Spectre of IC Design Tool And fabricated Dong-bu Hitec 0.35um BD350BA process.

• Journal of the Korean Society of Physical Medicine
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• v.14 no.3
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• pp.47-53
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• 2019

PURPOSE: This study measured the external pressure on abdomen during maximal inspiration. The study determined the correlation between the diaphragmatic contraction pressure and the lung capacities to verify whether or not the measured pressure values can represent diaphragmatic contractility. METHODS: The study included 32 healthy subjects (16 males and 16 females). The researchers fabricated their own diaphragmatic pressure belt (DiP Belt) to measure DCP. DiP Belt device was fixed on the front of the abdomen and the diaphragmatic contractility was measured during maximal inspiration. The lung capacities were measured using a portable digital spirometer device (Pony Fx, COSMED, Italy). A digital spirometer is a device that is used to test the flow of air entering and exiting the lungs. RESULTS: DCP showed significant positive correlations with vital capacity (VC), inspiratory reserve volume (IRV) and inspiratory capacity (IC). Among values of lung capacities, IC showed especially strong positive correlations with the DCP (r =.714, p<.010). For the males, DCP showed significant positive correlations with IRV and IC, and DCP showed significant negative correlation with the expiratory reserve volume (ERV). For the females, DCP showed significant positive correlation with tidal volume (VT), but any significant correlation was not found with any of the other values of lung capacities. CONCLUSION: DCP showed high correlations with IRV and IC associated with inspiratory capacity. Therefore, The DiP Belt can be looked upon as a simple device that is very useful for measuring diaphragmatic contractility.

• ETRI Journal
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• v.37 no.6
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• pp.1165-1175
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• 2015

This paper presents an advanced sensorless permanent magnet (PM) brushless motor controller integrated circuit (IC) employing an automatic lead-angle compensator. The proposed IC is composed of not only a sensorless sine-wave motor controller but also an isolated gate-driver and current self-sensing circuit. The fabricated IC operates in sensorless mode using a position estimator based on a sliding mode observer and an open-loop start-up. For high efficiency PM brushless motor driving, an automatic lead-angle control algorithm is employed, which improves the efficiency of a PM brushless motor system by tracking the minimum copper loss under various load and speed conditions. The fabricated IC is evaluated experimentally using a commercial 200 W PM brushless motor and power switches. The proposed IC is successfully operated without any additional sensors, and the proposed algorithm maintains the minimum current and maximum system efficiency under $0N{\cdot}m$ to $0.8N{\cdot}m$ load conditions. The proposed IC is a feasible sensorless speed controller for various applications with a wide range of load and speed conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.572-575
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• 2009

In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.152-159
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• 2004

In this study, we design the one-chip PWM IC with high voltage power switch (300V class LDMOSFET) for SMPS (Switching Mode Power Supply) application. Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain $({\simeq}65dB)$, unity frequency $({\simeq}190kHz)$ and large $PM(75^{\circ})$. comparator is designed with 2 stage. Saw tooth generators operate with 20kHz oscillation frequency. Also, we optimize drift concentration & drift length of n-LDMOSFET for design of high voltage switching device. It is shown that simulation results have the breakdown voltage of 350V. (using ISE-TCAD Simulation tool). PWM IC with power switching device is designed with 2um design rule and Bi-DMOS technology.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.