• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.102-108
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• 2005

We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy $(p-a-Si_{1-x}C_x:H)$ structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double $(p-a-Si_{1-x}C_x:H)$ layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of $9.0\%$ without any back reflector.

• Proceedings of the Korea Society of Environmental Biology Conference
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• 한국환경생물학회 2004년도 학술대회
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• pp.25-25
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• 2004

We studied algal growth-related water quality of the Dongbok lake which is the drinking water reservoir for the Gwangju municipality. Peridinium cinctum and several diatomic algal species frequently caused water bloom throughout the lake from early spring to late autumn. With the heaviest predominance of Peridinium cintum in May 2003, COD was 13.7 mg/I in the surface layer. Highly turbid surface water with 46.8 mg/I of SS was also caused by Perdinium bloom. Peridinium bloom decisively eliminated cyanobacterial growth in the lake, otherwise cyanobacterial bloom resulted. Dense algal layer was confined in the upper several meters of the water column above the thermocline, which gives relatively algae-free water in deeper layer suitable for drinking source water supply. Upon collapse of thermocline, water quality of the surface layer was improved while deeper layer was deteriorated in terms of water quality. This paper deals with some details of water quality changes with algal growth in the Dongbok lake past two years.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.887-890
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• 2009

Hydroxyapatite (HAp)-based materials have attracted considerable attention on account of their excellent stability and recrystallization. Nanoscale HAp powders with a mean particle size of 200 nm were used to regenerate the enamel layers of damaged teeth. An artificially scratched tooth was immersed in a nanoscale HAp powder suspension in d.i. water (HAp of 70 wt%) at 37 ${^{\circ}C}$ for a period of 1~3 months. SEM and AFM showed that the scratched surface was ultimately inlaid with HAp after three months and the roughness increased from 2.80 to 5.51. Moreover, the hardness of the neo-generated HAp layer on the crown was similar to that of the innate layer. $Ca^{2+}$ and ${PO_4}^{3-}$ ions from the HAp powders dissolved in d.i. water were precipitated on the tooth to produce cemented pasteson the enamel surface due to its high recrystallizing characteristics, resulting in a hard neo-regenerated HAp layer on the enamel layer. This nanoscale HAp powder solution might be used to heal decayed teeth as well as to develop tooth whitening appliances.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Proceedings of the KIEE Conference
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• 제27권3호
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• pp.50-54
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• 2013

In this work, the effects of blocking layer and optimally fabricated electrolyte were investigated with respect to impedance and conversion efficiency of the cells.A layer of $TiO_2$ less than ~200nm in thickness, as a blocking layer, was deposited by rf sputtering onto the F:$SnO_2$ (FTO) glass to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). Also, optimum condition of electrolytes preparation for DSCs was investigated. 3-methoxyppropionitrie and redox pairs with LiI and $I_2$ were used as solvents for fabrication of electrolyte. The electrochemical impedances of DSCs using this photo-anode were $R_1$: 13.8, $R_2$: 15.1, $R_3$: 11.9 and $R_h$: $8.3{\Omega}$, respectively. The $R_2$ impedance related by electron transportation from porous $TiO_2$ to FTO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 6.4% and approximately 1.3% higher than general one.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Journal of the Korean Society for Heat Treatment
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• 제16권5호
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• pp.260-266
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• 2003

In order to study the interfacial reaction between Nb thin sheet and Fe-C-(Si) alloy with different Chemical compositions, they were cast-bonded. The growth of carbide layer formed at the interface after isothermal heat treatment at 1173K, 1223K, 1273K and 1323K for various times was investigated. The carbide formed at the interface was NbC and the thickness of NbC layer was increased linearly in proportional to the heat treating time. Therefore, It was found that the growth of NbC layer was controlled by the interfacial reaction. The growth rate constant of NbC layer was slightly increased with increase of carbon content when the silicon content is similar in the cast irons. However, as silicon content increases with no great difference in carbon content, the growth of NbC layer was greatly retarded. The calculated activation energy for the growth of NbC layer was varied in the range of 447.4~549.3 kJ/moI with the compositions of cast irons.

• Journal of the Korea Society for Simulation
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• 제24권3호
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• pp.61-68
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• 2015

Mobile ad hoc networks (MANETs) are self-organized dynamic networks populated by mobile nodes. This paper presents the improved cross-layer approach to complement the recent works for video transmission services on MANET. We use a statistical design of experiment and analysis in order to investigate interactions between major factors of each layer effectively with minimizing ns-3 simulation run time. The proposed cross-layer approach considers MANET protocol layers (i.e., physical, network and transmission layers) and an application layer (i.e., a video encoder) as factors simultaneously. In addition, the approach defines an objective video quality metric as a response variable. The result of this paper can be applicable as a preliminary research to design an optimized video transmission application which has ability to adjust controllable factors to dynamic uncontrollable factors.