• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.4
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• pp.188-194
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• 2014

V2I(Vehicular to Infrastructure) is a one kind of communication systems which is used between the base stations and mobile objects. In V2I communication system, it is difficult to obtain the desired communication performance. Beamforming technology is to find the optimal path. and it can be improved the communication performance. MUSIC algorithm can be estimated the direction of arrival. The directional vector of received signals and the eigenvector has orthogonal property. MUSIC algorithm uses this property. In V2I communication environment, real time optimal path is changed. By the high computational complexity of the MUSIC algorithm, the optimal path estimation error is generated. In this paper, we propose a method of computation reduction algorithm for MUSIC algorithm.

• Journal of applied mathematics & informatics
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• v.34 no.3_4
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• pp.309-317
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• 2016

Let V be a Euclidean Jordan algebra with a symmetric cone K. We show that for a Z-transformation L with the additional property L(K) ⊆ K (which we will call ’cone-preserving’), GUS ⇔ strictly copositive on K ⇔ monotone + P. Specializing the result to the Stein transformation S_A(X) := X - AXA^T on the space of real symmetric matrices with the property $S_A(S^n_+){\subseteq}S^n_+$, we deduce that S_A GUS ⇔ I ± A positive definite.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.156-157
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• 2002

자성체, 반도체의 계면을 조절하여 스핀 산란을 없애는 방법으로 A12O3를 이용하여, 스핀의 정보를 잃지 않고 반도체에 주입할 수 있는 방법을 연구하였다. 반도체에 월형 편광된 laser를 조사하여 내부에서 여기한 전자 spin이 자성체 내부로 흘러가면서 일어나는 현상을 관측한 것이다[1], [2]. 일반적인 반도체와 금속간의 접합을 구성한 schottky-barrier 특성이 아닌 접합 사이에 인위적으로 barrier를 형성하여 그 특성을 관측하였다. n-type 과 p-type의 시료를 제작하여 I-V 특성을 온도에 따라 I-V 특성 측정하였다. (중략)

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.231-238
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• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• Textile Coloration and Finishing
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• v.3 no.4
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• pp.17-21
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• 1991

A rigid polymer, cellulose triacetate (CTA) dissolved in a combination of trifluoroacetic acid (TFA) and methylene chloride (MC) solution are liguid crystalline above a certain concentration. A flexible polymer, polyethylene terephthalate (PET) also dissolves in TFA/MC, but does not form liguid crystal phase. Ternary solutions, CTA/PET/TFA-MC which CTA and PET were mixed in a same solvent TFA/MC (6/4 : v/v) showed phase separation and mesophase formation.