• Current Photovoltaic Research
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• 제10권3호
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• pp.77-83
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• 2022

Renewable energy is receiving attention again as a way to realize carbon neutrality to overcome the climate change crisis. Among renewable energy sources, the installation of Photovoltaic is continuously increasing, and as of 2020, the global cumulative installation amount is about 590 GW and the domestic cumulative installation amount is about 17 GW. Accordingly, O&M technology that can analyze the power generation and fault diagnose about PV plants the is required. In this paper, a study was conducted to diagnose fault using I-V curves of PV strings and deep learning. In order to collect the fault I-V curves for learning in the deep learning, faults were simulated. It is partial shade and voltage mismatch, and I-V curves were measured on a sunny day. A two-step data pre-processing technique was applied to minimize variations depending on PV string capacity, irradiance, and PV module temperature, and this was used for learning and validation of deep learning. From the results of the study, it was confirmed that the PV fault diagnosis using I-V curves and deep learning is possible.

• ETRI Journal
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• 제11권2호
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.111-117
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• 2009

This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2007년도 춘계학술대회 논문집
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• pp.291-294
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• 2007

This paper preserts the characteristics of leakage currents flowing through 18 kV zinc oxide (ZnO) surge arrester under the mixed DC and AC voltages. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in I-V curves was observed at the low current region As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current th ZnO surge arrester.

• 조명전기설비학회논문지
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• 제21권10호
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• pp.66-72
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• 2007

이 논문은 직류+60[Hz] 교류 중첩전압에서 신품과 노후된 18[kV] 산화아연 서지피뢰기의 누설전류와 전력손실에 대하여 기술하였다. 최대 50[kV]의 직류+60[Hz] 교류를 발생시킬 수 있는 중첩전압발생장치가 설계되고 제작되었다. 피뢰기의 I-V 특성곡선은 전압중첩률 K의 함수로 측정된다. DC와 AC 전압이 중첩된 I-V, R-V 특성곡선은 순수한 직류와 교류곡선 사이에 있고 저전류 영역에서 교차현상이 나타난다. 그 결과 중첩 전압에서 직류 성분의 증가는 ZnO 피뢰기의 전체 누설전류의 저항성분의 증가를 유발한다. 또한 같은 인가전압에서 피뢰기를 통해 흐르는 누설전류는 상용전원에서 장시간 스트레스 받은 피뢰기가 신품 피뢰기에 비해서 높게 나타났다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 대한전자공학회논문지
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• 제26권6호
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• pp.38-47
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• 1989

헴트(HEMT) 소자의 순수 해석적 DC모델이 2차원 전하제어 시뮬레이션 결과[4]에 기초하여 제작되었다. 이 모델에서는 2-DEG 채널의 전자 운송 역학에 확산 효과를 추가하였다. 이 확산효과는 기존 1차원 DC모델에서 사용하는 전자 이동도 및 문턱전압을 증가시키는 효과를 가졌음을 보였다. 또한 2-DEG 농도분포함수를 piecewise 선형화하여 HEMT 소자의 subthreshold 특성의 해석적 모델을 추가하였고, 따라서 2-DEG의 채널 두께 및 게이트 용량을 게이트 전압의 함수로 나타내었다. I-V curve의 전류포화영역에서의 기울기를 모델하는데는 gate 밑의 전자포화채널 지역에서의 전자채널두께와 채널길이 변조현상을 함께 고려하였다. Troffimenkoff형의 전장의존 전자이동도를 사용하여 I-V곡선의 포화현상을 모델하였다. 또한 기존 1차원 모델에서 감안되지 않은 2차원 효과가 실제 전류특성곡선에서 매우 중요한 역할을 하며, 이 효과가 효과적으로 1개의 보정상수f로 보상됨을 보였고, 물리적으로 이 상수가 채널 GCA 지역과 채널포화지역 사이에 형성되는 채널천이지역의 전자농도와 관계됨을 보였다.

• 천문학회지
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• 제28권1호
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• pp.31-43
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• 1995

We present UBVRI CCD photometry of the Type Ie supernova SN 19941 in M51 which was discovered on April 2, 1994 (UT). UBVRI CCD photometry of SN 1994 I were obtained for the period of the first two months from April 4, 1994, using the Seoul National University Observatory 60 cm telescope. The light curves of SN 19941 show several interesting features: (a) SN 19941 reaches the maximum brightness at B-band on April 8.23 (B = 13.68 mag), at V-band on April 9.10 (V = 12.89 mag), and at I-band on April 10.32 (I = 12.48 mag); (b) The light curves around the maximum brightness are much narrower than those of other types of supernovae; (c) The light curves after the peak decline more steeply than those of other types of supernovae; and (d) The colors get redder from $(V-R){\approx}0.2 mag ((V - I){\approx} 0.3 mag, (B - V){\approx}0.7 mag)$ on April 4 to $(V-R){\approx}0.6 mag ((V-1){\approx}0.9 mag, (B-V){\approx}1.3 mag)$ on April 18. Afterwards (V - R) colors get bluer slightly $(by\~0.005 mag/day)$, while (V-I) colors stay almost constant around $(V-1){\approx}1.0 mag$. The color at the maximum brightness is (B-V)=0.9 mag, which is $\~1$mag redder than the mean color of typical Type la supernovae at the maximum brightness. The light curves of SN 1994I are similar to those of the Type Ie supernova SN 1962L in NGC 1073. Adopting the distance modulus of $(m-M)_0 = 29.2 mag$ and the reddening of E(B - V) = 0.45 mag [Iwamoto et al. 1994, preprint for ApJ], we derive absolute magnitudes at the maximum brightness of SN 1994I, Mv(max) = -17.7 mag and MB(max) = -17.4 mag. This result shows that SN 1994I was $\~2$mag fainter at the maximum brightness compared with typical Type Ia supernovae. A narrower peak and faster decline after the maximum in the light curve of SN 1994I compared with other types of supernovae indicate that the progenitor of SN 1994I might be a lower mass star compared with those of other types of supernovae.

• 한국재료학회지
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• 제26권8호
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• pp.422-426
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• 2016

With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.256-258
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• 2002

Six different types of joining between two parallel high Tc super-conducting tapes were prepared and I-V characteristic curves were obtained at the atmosphere of liquid nitrogen. Resistances in joint parts were estimated from I-V curves. We selected the best jointing method among these six methods and its availability for fabricating HTS field coils is discussed.