• Title/Summary/Keyword: I-V curves

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Fault Diagnosis of PV String Using Deep-Learning and I-V Curves (딥러닝과 I-V 곡선을 이용한 태양광 스트링 고장 진단)

  • Shin, Woo Gyun;Oh, Hyun Gyu;Bae, Soo Hyun;Ju, Young Chul;Hwang, Hye Mi;Ko, Suk Whan
    • Current Photovoltaic Research
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    • v.10 no.3
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    • pp.77-83
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    • 2022
  • Renewable energy is receiving attention again as a way to realize carbon neutrality to overcome the climate change crisis. Among renewable energy sources, the installation of Photovoltaic is continuously increasing, and as of 2020, the global cumulative installation amount is about 590 GW and the domestic cumulative installation amount is about 17 GW. Accordingly, O&M technology that can analyze the power generation and fault diagnose about PV plants the is required. In this paper, a study was conducted to diagnose fault using I-V curves of PV strings and deep learning. In order to collect the fault I-V curves for learning in the deep learning, faults were simulated. It is partial shade and voltage mismatch, and I-V curves were measured on a sunny day. A two-step data pre-processing technique was applied to minimize variations depending on PV string capacity, irradiance, and PV module temperature, and this was used for learning and validation of deep learning. From the results of the study, it was confirmed that the PV fault diagnosis using I-V curves and deep learning is possible.

AN ANALYTICAL DC MODEL FOR HEMTS (헴트 소자의 해석적 직류 모델)

  • Kim, Yeong-Min
    • ETRI Journal
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    • v.11 no.2
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    • pp.109-119
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    • 1989
  • Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

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Electrical Behaviors of ZnO Elements under Combined Direct and Alternating Voltages

  • Yang, Soon-Man;Lee, Bok-Hee;Paek, Seung-Kwon
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.111-117
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    • 2009
  • This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

The electrical properties of in 18kV ZnO surge arrestor with mixed direct and 60Hz Alternating Voltage (중첩전압(직류 +60Hz 교류)에서 18kV 배전용 피뢰기의 전기적 특성)

  • Lee, Bok-Hee;Lee, Seung-Ju;Lee, Su-Bong;Jung, Dong-Cheol;Baek, Young-Hwan
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2007.05a
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    • pp.291-294
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    • 2007
  • This paper preserts the characteristics of leakage currents flowing through 18 kV zinc oxide (ZnO) surge arrester under the mixed DC and AC voltages. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in I-V curves was observed at the low current region As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current th ZnO surge arrester.

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Electrical Properties of 18[kV] ZnO Surge Arrester Stressed by the Mixed DC and 60[Hz] AC Voltages (직류+60[Hz]교류 중첩전압에 대한 18[kV] ZnO 피뢰기의 전기적 특성)

  • Lee, Su-Bong;Lee, Seung-Ju;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.10
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    • pp.66-72
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    • 2007
  • This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

C-V Characteristics of Porous Silicon Alcohol Sensors with the Semi-transparent Electrode (반투명 전극으로 된 다공질 실리콘 알코올 가스 센서의 C-V 특성)

  • 김성진;이상훈
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1085-1088
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    • 2003
  • In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

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An Analytical DC Model for HEMT's (헴트 소자의 해석적 직류 모델)

  • Kim, Young-Min
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.38-47
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    • 1989
  • A purely analytical model for HEMT's based on a two dimensional charge control simul-ation[4] is proposed. In this model proper treatment of diffusion effect of electron transport along a 2-DEG (two dimensional electron gas) channel is perfoemed. This diffusion effect is shown to effectively increase the bulk mibility and threshold voltage of the I-V curves compared to the existing models. The channel thickness and gate capacitance are expressed as functions of gate voltages covering subthreshold characteristics of HEMT's analytically. By introducing the finite channel opening and an effiective channel-length modulation, the solpe of the saturation region of the I-V curves ws modeled. The smooth transition of the I-V curves at linear-to-saturation regions of the I-V curves was possible using the continuous Troffimenkoff-type of field dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transition section forming between a GCA and a saturated section. This factor removes large discrepancies in the saturation region of the I-V curve predicted by existing l-dimensional models.

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UBVRI CCD PHOTOMETRY OF THE TYPE Ic SUPERNOVA SN 1994I IN M51: THE FIRST TWO MONTHS

  • LEE MYUNG GYOON;KIM EUNHYEUK;KIM SANG CHUL;KIM SEUNG LEE;PARK WON KEE;PYO TAE SOO
    • Journal of The Korean Astronomical Society
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    • v.28 no.1
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    • pp.31-43
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    • 1995
  • We present UBVRI CCD photometry of the Type Ie supernova SN 19941 in M51 which was discovered on April 2, 1994 (UT). UBVRI CCD photometry of SN 1994 I were obtained for the period of the first two months from April 4, 1994, using the Seoul National University Observatory 60 cm telescope. The light curves of SN 19941 show several interesting features: (a) SN 19941 reaches the maximum brightness at B-band on April 8.23 (B = 13.68 mag), at V-band on April 9.10 (V = 12.89 mag), and at I-band on April 10.32 (I = 12.48 mag); (b) The light curves around the maximum brightness are much narrower than those of other types of supernovae; (c) The light curves after the peak decline more steeply than those of other types of supernovae; and (d) The colors get redder from $(V-R){\approx}0.2 mag ((V - I){\approx} 0.3 mag, (B - V){\approx}0.7 mag)$ on April 4 to $(V-R){\approx}0.6 mag ((V-1){\approx}0.9 mag, (B-V){\approx}1.3 mag)$ on April 18. Afterwards (V - R) colors get bluer slightly $(by\~0.005 mag/day)$, while (V-I) colors stay almost constant around $(V-1){\approx}1.0 mag$. The color at the maximum brightness is (B-V)=0.9 mag, which is $\~1$mag redder than the mean color of typical Type la supernovae at the maximum brightness. The light curves of SN 1994I are similar to those of the Type Ie supernova SN 1962L in NGC 1073. Adopting the distance modulus of $(m-M)_0 = 29.2 mag$ and the reddening of E(B - V) = 0.45 mag [Iwamoto et al. 1994, preprint for ApJ], we derive absolute magnitudes at the maximum brightness of SN 1994I, Mv(max) = -17.7 mag and MB(max) = -17.4 mag. This result shows that SN 1994I was $\~2$mag fainter at the maximum brightness compared with typical Type Ia supernovae. A narrower peak and faster decline after the maximum in the light curve of SN 1994I compared with other types of supernovae indicate that the progenitor of SN 1994I might be a lower mass star compared with those of other types of supernovae.

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Use of a Transformed Diode Equation for Characterization of the Ideality Factor and Series Resistance of Crystalline Silicon Solar Cells Based on Light I-V Curves (Light I-V 곡선을 이용한 결정질 태양전지의 이상계수와 직렬 저항 특성 분석)

  • Jeong, Sujeong;Kim, Soo Min;Kang, Yoonmook;Lee, Hae-seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.422-426
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    • 2016
  • With the increase in installed solar energy capacity, comparison and analysis of the physical property values of solar cells are becoming increasingly important for production. Therefore, research on determining the physical characteristic values of solar cells is being actively pursued. In this study, a diode equation, which is commonly used to describe the I-V behavior and determine the electrical characteristic values of solar cells, was applied. Using this method, it is possible to determine the diode ideality factor (n) and series resistance ($R_s$) based on light I-V measurements. Thus, using a commercial screen-printed solar cell and an interdigitated back-contact solar cell, we determined the ideality factor (n) and series resistance ($R_s$) with a modified diode equation method for the light I-V curves. We also used the sun-shade method to determine the ideality factor (n) and series resistance ($R_s$) of the samples. The values determined using the two methods were similar. However, given the error in the sun-shade method, the diode equation is considered more useful than the sun-shade method for analyzing the electrical characteristics because it determines the ideality factor (n) and series resistance ($R_s$) based on the light I-V curves.

Study on Joint Technology for HTS Field Coils (고온초전도 계자코일 제작을 위한 접합기술 연구)

  • 손명환;김석환;백승규;조영식;서무교;이언용;권영길;윤문수
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.256-258
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    • 2002
  • Six different types of joining between two parallel high Tc super-conducting tapes were prepared and I-V characteristic curves were obtained at the atmosphere of liquid nitrogen. Resistances in joint parts were estimated from I-V curves. We selected the best jointing method among these six methods and its availability for fabricating HTS field coils is discussed.

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