• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.729-733
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• 2005

Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

• Journal of The Korean Astronomical Society
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• v.45 no.1
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• pp.1-6
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• 2012

We use a Probabilistic Neural Network (PNN) technique to derive the orbital parameters of spectroscopic binary stars. Using measured radial velocity data of five double-lined spectroscopic binary systems (i.e., EQ Tau, V376 And, V776 Cas, V2377 Oph and EE Cet), we find the corresponding orbital and spectroscopic elements. Our numerical results are in good agreement with those obtained by other groups via more traditional methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.72-75
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• The Korean Journal of Physiology
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• v.26 no.1
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• pp.15-25
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• 1992

In order to elucidate the properties of the background current whole cell patch clamp studies were performed in rabbit ventricular cells. Ramp pulses of ${\pm}80\;mV$ from holding potential of 40 mV(or 20 mV) at the speed of 0.8 V/sec were given every 30 sec(or 10 sec) and current-voltage diagrams(I-V curve) were obtained. For the activation of the background current isoprenaline, adenosine 3',5'-cyclic monophosphate(dBcAMP), guanosine 3',5'-cyclic monophosphate(cGMP), and $N^6$-2'-o-dibutyryladenosine 3',5'-cyclic monophosphate(dBcAMP) were applied after all known current systems were blocked with 2mM Ba, 1 mM Cd ,5 mM Ni, 10 ${\mu}M$ diltiazem, 10 ${\mu}m$ ouabain, and 20 mM tetraethylammonium(TEA). The conductance of background current in control was $0.65{\pm}0.69$ nS at 0 mV, its I-V curves was almost linear and reversed near 50 mV. When there was no taurine in pipette solution, isoprenaline hardly activated the background current but when taurine existed in pipette solution, isoprenaline activated the larger background current. Cyclic AMP or cyclic GMP alone had little effect on the activation of the background current, while cGMP potentiated cGMP effect. When the background current was activated with cGMP and cAMP, isoprenaline could not further increased the background current. The background current activated by isoprenaline depended on extracellular $Cl^-$ concentration and its reversal potential was shifted according to chloride equilibrium potential. The change of extracellular $Na+$ concentration had little effect on reversal potential of the background current activated by isoprenaline.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1019-1024
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• 2004

The present paper is focused on simultaneous sorption concentration of gold (III) and silver (I) from thiocyanate solutions using high-selective anion exchanger AN-25 and subsequent separation of these ions at various concentrations of thiocarbamide (eluent). As a result, silver (I) ions are completely eluted from AN-25 and gold (III) ions remain in the resin phase and can be determined directly in the solid phase by diffuse reflection spectroscopy. It is proposed to use the sorption-spectroscopic method for Au(III) determination in aqueous solutions. The calibration curve is linear in the concentration range of 1-19 mg/L (sample volume is 10.0 mL) and the detection limit is 0.05 ${\mu}g/mL$. The presence of Cu(II), Co(II), Fe(II) do not hinder this determination. Au(III) was determined in industrial solutions.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.5
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• pp.477-484
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• 1997

Intracellular recordings of oscillatory firing (bursting activity) were obtained from Purkinje cells (PCs) in rat cerebellar slices. Apamin inhibited post-burst hyperpolarizations (PBHs) progressively and finally terminated oscillatory firing activity of PCs. Apamin did not affect the amplitude or duration of the after-hyperpolarization (AHP) between spikes within the burst. In the voltage clamp mode, apamin shifted the whole-cell, quasi-steady state I/V relationship in an inward direction and abolished the zero slope resistance (ZSR) region by blocking outward current. Nickel ($Ni^{2+}$) terminated oscillatory activity and also abolished the ZSR region. However, $Ni^{2+}$ did not have progressive blocking action on the post-burst hyperpolarization before it blocked oscillatory activity. $Ni^{2+}$ blocked an inward current at potentials positive to approximately -65 mV, which was responsible for the ZSR region and outward current at more negative potentials. These data indicated that oscillatory activity of PCs is sustained by a balance between a slow $Ni^{2+}$-sensitive inward current and an apamin-sensitive outward current in the region of ZSR of the whole-cell I/V curve.

• Magazine of the Korean Society of Agricultural Engineers
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• v.18 no.2
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• pp.4116-4120
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• 1976

With the use of many rivers increased nearly to the capacity, the need for information concerning daily quantities of water and the total annual or seasonal runoff has became increased. A systematic record of the flow of a river is commonly made in terms of the mean daily discharge Since. a single observation of stage is converted into discharge by means of rating curve, it is essential that the stage discharge relations shall be accurately established. All rating curves have the looping effect due chiefly to channel storage and variation in surface slope. Loop rating curves are most characteristic on streams with somewhat flatter gradients and more constricted channels. The great majority of gauge readings are taken by unskilled observers once a day without any indication of whether the stage is rising or falling. Therefore, normal rating curves shall show one discharge for one gauge height, regardless of falling or rising stage. The above reasons call for the correction of the discharge measurements taken on either side of flood waves to the theoretical steady-state condition. The correction of the discharge measurement is to consider channel storage and variation in surface slope. (1) Channel storage As the surface elevation of a river rises, water is temporarily stored in the river channel. There fore, the actual discharge at the control section can be attained by substracting the rate of change of storage from the measured discharge. (2) Variation in surface slope From the Manning equation, the steady state discharge Q in a channel of given roughness and cross-section, is given as {{{{Q PROPTO SQRT { 1} }}}} When the slope is not equal, the actual discharge will be {{{{ { Q}_{r CDOT f } PROPTO SQRT { 1 +- TRIANGLE I} CDOT TRIANGLE I }}}} may be expressed in the form of {{{{ TRIANGLE I= { dh/dt} over {c } }}}} and the celerity is approximately equal to 1.3 times the mean watrr velocity. Therefore, The steady-state discharge can be estimated from the following equation. {{{{Q= { { Q}_{r CDOT f } } over { SQRT { (1 +- { A CDOT dh/dt} over {1.3 { Q}_{r CDOT f }I } )} } }}}} If a sufficient number of observations are available, an alternative procedure can be applied. A rating curve may be drawn as a median line through the uncorrected values. The values of {{{{ { 1} over {cI } }}}} can be yielded from the measured quantities of Qr$.$f and dh/dt by use of Eq. (7) and (8). From the 1/cI v. stage relationship, new vlues of 1/cI are obtained and inserted in Eq. (7) and (8) to yield the steady-state discharge Q. The new values of Q are then plotted against stage as the corrected steadystate curve.