• Title/Summary/Keyword: I-V curve

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SPICE Parameter Extraction for the IGBT (IGBT의 SPICE 파라미터 추출)

  • 김한수;조영호;최성동;최연익;한민구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.4
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    • pp.607-612
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    • 1994
  • The static and dynamic model of IGBT for the SPICE simulation has been successfully developed. The various circuit model parameters are extracted from the I-V and C-V characteristics of IGBT and implemented into our model. The static model of IGBT consists of the MOSFET, bipolar transistor and series resistance. The parameters to be extracted are the threshold voltage of MOSFET, current gain $\beta$ of bipolar transistor, and the series resistance. They can be extracted from the measured I-V characteristics curve. The C-V characteristics between the terminals are very important parameters to determine the turn-on and turn-off waveform. Especially, voltage dependent capacitance are polynomially approximated to obtain the exact turn-on and turn-off waveforms. The SPICE simulation results employing new model agree well with the experimental values.

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A Study on the Fabrication of Plasma Display Panel and It's Characteristics (플라즈마 디스플레이 판넬의 제작 및 특성 연구)

  • Kim, J.S.;Choi, K.C.;Shin, B.J.;Whang, K.W.
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.157-160
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    • 1990
  • A dot matrix type DC Plasma Display Panel was fabricated and it's characteristics was investigated. Paschen curve and I-V curve of various gas mixture was given. Optimal gas mixing ratio, pressure and operating point was determined. The priming effect was observed and discharge delay time was measured with varing applied voltage, priming current, priming distance, duty ratio.

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The Measurement and Analysis of LiF:Mg, Cu, Na, Si TL Material by Thermoluminescence Spectrum (LiF:Mg, Cu, Na, Si TL 물질의 열자극발광스펙트럼 측정 및 분석)

  • Lee, J.I.;Moon, J.H.;Kim, D.H.
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.1
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    • pp.149-153
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    • 2001
  • Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

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Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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UBVRI CCD PHOTOMETRY OF THE TYPE Ic SUPERNOVA SN 1994I IN M51: THE FIRST TWO MONTHS

  • LEE MYUNG GYOON;KIM EUNHYEUK;KIM SANG CHUL;KIM SEUNG LEE;PARK WON KEE;PYO TAE SOO
    • Journal of The Korean Astronomical Society
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    • v.28 no.1
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    • pp.31-43
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    • 1995
  • We present UBVRI CCD photometry of the Type Ie supernova SN 19941 in M51 which was discovered on April 2, 1994 (UT). UBVRI CCD photometry of SN 1994 I were obtained for the period of the first two months from April 4, 1994, using the Seoul National University Observatory 60 cm telescope. The light curves of SN 19941 show several interesting features: (a) SN 19941 reaches the maximum brightness at B-band on April 8.23 (B = 13.68 mag), at V-band on April 9.10 (V = 12.89 mag), and at I-band on April 10.32 (I = 12.48 mag); (b) The light curves around the maximum brightness are much narrower than those of other types of supernovae; (c) The light curves after the peak decline more steeply than those of other types of supernovae; and (d) The colors get redder from $(V-R){\approx}0.2 mag ((V - I){\approx} 0.3 mag, (B - V){\approx}0.7 mag)$ on April 4 to $(V-R){\approx}0.6 mag ((V-1){\approx}0.9 mag, (B-V){\approx}1.3 mag)$ on April 18. Afterwards (V - R) colors get bluer slightly $(by\~0.005 mag/day)$, while (V-I) colors stay almost constant around $(V-1){\approx}1.0 mag$. The color at the maximum brightness is (B-V)=0.9 mag, which is $\~1$mag redder than the mean color of typical Type la supernovae at the maximum brightness. The light curves of SN 1994I are similar to those of the Type Ie supernova SN 1962L in NGC 1073. Adopting the distance modulus of $(m-M)_0 = 29.2 mag$ and the reddening of E(B - V) = 0.45 mag [Iwamoto et al. 1994, preprint for ApJ], we derive absolute magnitudes at the maximum brightness of SN 1994I, Mv(max) = -17.7 mag and MB(max) = -17.4 mag. This result shows that SN 1994I was $\~2$mag fainter at the maximum brightness compared with typical Type Ia supernovae. A narrower peak and faster decline after the maximum in the light curve of SN 1994I compared with other types of supernovae indicate that the progenitor of SN 1994I might be a lower mass star compared with those of other types of supernovae.

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Nondestructive Evaluation of Nanostructured Thin Film System Using Scanning Acoustic Microscopy (초음파현미경을 이용한 나노 구조 박막 시스템의 비파괴평가)

  • Miyasaka, Chiaki;Park, Ik-Keun;Park, Tae-Sung
    • Journal of the Korean Society for Nondestructive Testing
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    • v.30 no.5
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    • pp.437-443
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    • 2010
  • In recent years, as nano scale structured thin film technology has emerged in various fields such as the materials, biomedical and acoustic sciences, the quantitative nondestructive adhesion evaluation of thin film interfaces using ultra high frequency scanning acoustic microscopy(SAM) has become an important issue in terms of the longevity and durability of thin film devices. In this study, an effective technique for investigating the interfaces of nano scale structured thin film systems is described, based on the focusing of ultrasonic waves, the generation of leaky surface acoustic waves(LSAWs), V(z) curve simulation and ultra high frequency acoustical imaging_ Computer simulations of the V(z) curve were performed to estimate the sensitivity of detection of micro flaws(i.e., delamination) in a thin film system. Finally, experiments were conducted to confirm that a SAM system operating at a frequency of 1 GHz can be useful to visualize the micro flaws in nano structured thin film systems.

Sorption of Thiocyanate Silver Complexes and Determination of Silver by Diffuse Reflectance Spectroscopy

  • Kononova, O.N.;Goryaeva, N.G.;Vorontsova, T.V.;Bulavskaya, T.A.;Kachin, S.V.;Kholmogorov, A.G.
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1832-1838
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    • 2006
  • The present paper is focused on sorption concentration of silver (I) on some complex-forming ion exchangers in the initial thiocyanate form and subsequent determination of Ag(I) in the phase of anion exchanger AN-25 by diffuse reflectance spectroscopy. The sorption and kinetic characteristics of the sorbents were investigated. The apparent stability constants of thiocyanate silver complexes in the ion exchanger phase were calculated. The sorption-spectroscopic method is proposed for Ag(I) determination in aqueous solutions. The calibration curve is linear in the concentration range of 10-200 mg/L (sample volume is 10.0 mL) and the detection limit is 2 $\mu$g/mL. The presence of $Na^+,\;K^+,\;Mg^{2+}$ (macrocomponents) as well as of Ni (II), Co (II), Cu (II) do not hinder the determination of silver (I).

A basic study for the behaviour control of sevenband grouper, Epinephelus septem fasciatus, to underwater low frequency sound I. The Auditory thresholds of sevenband grouper (수중 저주파에 의한 능성어 (Epinephelus septem fasciatus)의 행동제어에 관한 기초적 연구 I. 능성어의 청각문턱치)

  • 양용수
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.35 no.4
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    • pp.391-396
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    • 1999
  • It is well known that fish hear a wide frequency range of sound using both laterial line and inner ear, and the sound is probably the most effective channel for long-range communication underwater than any other stimulus.The auditory threshold of svenband grouper, Epinephelus septem fasciatus was determined by conditioning method using a sound coupled with electric shock in a tank. The audio-signals and electric shock used in the experiment were pure tones of 100 to 1000Hz and DC 6n.The response of fish to the sound was observed by ECG intervals from precordial leads method (V1·V2 method). The auditory threshold curve for sevenband grouper was V-shaped, with most sensitive threshold at 350Hz in the range of 100~1000Hz. The Sevenband grouper were more sensitive to sounds of 200~400Hz than to adjacent frequencies.

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2D-Simulation of Quantum Effects in Silicon Nanowire Transistor (실리콘 나노선 트렌지스터 양자 효과의 2차원 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.132-132
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    • 2009
  • A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

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