• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.1
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• pp.51-56
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• 2014

PV cell modeling is necessary both for software and hardware simulators in analyzing and testing the performance of PV generation systems. Unique I-V curve of a PV cell identifies its own characteristics by electrical equivalent model that is composed of diode constants ($I_o$, $v_t$), photo-generated current ($I_{ph}$), series resistance ($R_s$), and shunt resistance ($R_{sh}$). Photo-generated current can be easily estimated since it is proportional to irradiation level. However, other electrical parameters should be solved from the manufacturer's data sheet that is consisted with three remarkable operating points such as open circuit voltage ($V_{oc}$), short circuit current ($I_{sc}$), and maximum power voltage/current ($V_{MPP}/I_{MPP}$). This paper explains and analyzes mathematical process of a novel PV cell modeling algorithm that was proposed by the authors with the name of "K-algorithm".

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.125.2-125.2
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• 2010

In this paper, both theoretical and experimental investigations have been performed to examine the effects of key operating parameters on the cell performance of a DMFCs (i.e., methanol feed concentration and operating temperature). For experiment, the membrane electrode assemblies (MEAs) were prepared using a conventional MEA fabrication method based on a catalyst coated electrode (CCE) and tested under various cell temperatures and methanol feed concentrations. The polarization curve measurements were conducted using in-house-made $25cm^2$ MEAs. The voltage-current density data were collected under three different cell temperatures ($50^{\circ}C$, $60^{\circ}C$, and $70^{\circ}C$) and four different methanol feed concentrations (1 M, 2 M, 3 M, and 4 M). The experimental data indicate that the measured I-V curves are significantly altered, depending on these conditions. On the other hand, previously developed one-dimensional, two-phase DMFC model is simulated under the same operating conditions used in the experiments. The model predictions compare well with the experimental data over a wide range of these operating conditions, which demonstrates the validity and accuracy of the present DMFC model. Furthermore, both simulation and experimental results exhibit the strong influences of methanol and water crossover rates through the membrane on DMFC performance and I-V curve characteristics.

• Bulletin of the Korean Chemical Society
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• v.27 no.11
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• pp.1832-1838
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• 2006

The present paper is focused on sorption concentration of silver (I) on some complex-forming ion exchangers in the initial thiocyanate form and subsequent determination of Ag(I) in the phase of anion exchanger AN-25 by diffuse reflectance spectroscopy. The sorption and kinetic characteristics of the sorbents were investigated. The apparent stability constants of thiocyanate silver complexes in the ion exchanger phase were calculated. The sorption-spectroscopic method is proposed for Ag(I) determination in aqueous solutions. The calibration curve is linear in the concentration range of 10-200 mg/L (sample volume is 10.0 mL) and the detection limit is 2 $\mu$g/mL. The presence of $Na^+,\;K^+,\;Mg^{2+}$ (macrocomponents) as well as of Ni (II), Co (II), Cu (II) do not hinder the determination of silver (I).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.1-10
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• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.977-982
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• 2000

Conventional transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area. These consequently have disadvantage for high speed switching performance. In this paper, a lateral structure transistor which has minimized parasitic capacitance by using SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics are designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance is proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed lateral structure transistor is certified through the V$\_$CE/-I$\_$C/ characteristics curve, h$\_$FE/-I$\_$C/ characteristics, and GP-plot. Cutoff Frequency is 13.7㎓.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.1971-1978
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• 2016

In this paper, electrical and physical characteristics associated with the ionization growth of soil under impulse voltages in a coaxial cylindrical electrode system to simulate a horizontally-buried ground electrode were experimentally investigated. The results were summarized as follows: Transient ground resistances decreased significantly by soil ionization. The voltage-current (V-I) curves for non-ionization in soil lined up in a straight line with the nearly same slope that is the ground resistance, but they showed a 'cross-closed loop' of ${\infty}$-shape under ionization. The conventional ground resistance and equivalent soil resistivity were inversely proportional to the peak value of injected impulse currents. On the other hand, the equivalent ionization radius and time-lag to the maximum value of ionization radius were increased with increasing the incident impulse voltages. An analysis method for the transient ground resistances of the ground electrode based on the ionization phenomena was proposed. The proposed method can be applied to analyze the transient performances of grounding systems for lightning protection in power system installations.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.12
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• pp.1619-1625
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• 2018

Portable electronic devices secondary batteries can cause fire and explosion due to micro-current change in addition to the situation of short-circuit inrush current, safety can not be secured with a general operation limited current fuse. Therefore, in secondary battery, it is necessary for the protector to satisfy both the limit current type operation in the open-short-circuit inrush current and the current detection operation characteristic in the micro current change situation and for this operation, a fuse for the current detection type secondary battery protection circuit can be applied. The purpose of this study is to design a protection device that operates stably in the hazardous situation of small capacity secondary battery for portable electronic devices through the design of low melting fuse elements alloy of sensing type fuse and secures stability in abnormal current state. As a result of the experiment, I-T and V-T operation characteristics are satisfied in a the design of the alloy of the current sensing type self-contained low melting point fuse and the resistance of the heating resistor. It is confirmed that it can prevent accidents of short circuit over-current and micro current change of secondary battery.

• Journal of The Korean Astronomical Society
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• v.26 no.2
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• pp.115-134
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• 1993

The light curve and radial velocity curve of multiperiodic dwarf cepheid VI719 Cyg (HD200925) with peculiar light curve have been reanalyzed in order to identify the oscillation modes to confirm the helium settling within the envelope. To do these, through the period search for the photometric and radial velocity data from the literature, two different periods were determined and the oscillation modes corresponding to the first and second periods were identified as the fundamental and first radial overtones. Hence the helium settling within the envelope was confirmed from the period ratio. The color excess, metallicity, effective temperature, and surface gravity corresponding to two different modes were determined and it was found that these parameters almost do not depend upon different oscillation mode. By utilizing the surface brightness method, we investigated the variation of angular diameter and radial displacement and it was found that the angular variation is very peculiar. Also by referring to the stellar models, mass and age were determined as $2.7M_{\bigodot}$ and 0.42 Gyr respectively which make this variable star heavier and younger than other multimode dwarf cepheids. Preliminary spectroscopic CCD observations were carried out and it was found that Mg in VI719 Cygni is nearly solar abundent according to the analysis of $5172.68{\AA}MgI$ line which is inconsistent with the photometric result. It was suggested that VI719 Cyg may be classified as a $\rho$ Pup stars according to the photometric characteristics.