• 전력전자학회논문지
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• 제14권5호
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• pp.372-378
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• 2009

태양광 발전시스템의 설치 용량이 증가함에 따라 시스템 효율을 개선하기 위한 연구가 활발히 진행되고 있다. 고성능 시스템의 설계 및 시험을 위해서는 태양전지의 모델링을 바탕으로 태양전지의 물리적 특성에 관해 정확히 이해하는 것이 중요하다. 그러나 태양전지의 모델은 다수의 파라미터가 얽힌 비선형 형태이며, 모델식의 파라미터 값을 얻기 위한 기존의 방식에서는 오차를 동반하는 실제와 다른 가정을 전제로 하므로 결과적으로 추출된 파라미터의 정확도가 저하되게 되는 단점이 있다. 따라서 본 논문에서는 제조사가 표준상태에서 측정하여 공개하는 태양전지의 I-V 커브로부터 다이오드의 이상계수와 역포화 전류를 구하고 이로부터 저항 성분이 없는 이상적인 태양전지의 I-V 커브를 도출한 뒤, 실측된 I-V 커브와 차이를 최소화하는 직·병렬 저항값을 추출하는 새로운 방식을 제안한다. 기존의 방식과 제안된 방식의 모델링을 통하여 얻은 파라미터를 이용해 구현한 I-V 커브와 실측 I-V 커브와의 상관관계를 최소자승법을 통해 계산함으로써 제안된 방법의 유용함을 증명하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.113-116
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• 1996

A model of a photovoltaic array written in PSPICE is presented in this paper. PSPICE is used to display array characteristics (I-V, P-V curve) as a function of parameters such as insulation and temperature. This paper is display in detail through a example of SM-50 model.

• 전기의세계
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• 제26권5호
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• 한국초전도ㆍ저온공학회논문지
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• 제14권2호
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• pp.20-23
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• 2012

With continuous development of the 2nd generation HTS conductor, the critical current of the conductor is also increasing. However, many applications require more than 2 conductors in parallel to transport large current. Applications such as HTS power cables and some HTS current leads usually need much larger transport current than that provided by a single conductor and they require more than several tens of HTS conductors. In the case of parallel connection of multiple HTS conductors, the current distribution depends on the contact resistance of each conductor at the terminals for DC operation. The non-uniform distribution of the terminal resistances results in a non-uniform distribution of the current. The resultant current non-uniformity affects on the measurement of the I-V curve and the thermal performance of the multiple conductors. This paper describes the I-V curves obtained from multiply connected HTS conductors with different terminal contact resistances to investigate the relationship between the distorted I-V curve and heat generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.295-299
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• 1996

In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.