• Title/Summary/Keyword: I-V Curve Fill factor

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Physical-based Dye-sensitized Solar Cell Equivalent Circuit Modeling and Performance Analysis (물리 기반의 염료 감응형 태양전지 등가회로 모델링 및 성능 분석)

  • Wonbok Lee;Junhyeok Song;Hwijun Choi;Bonyong Gu;Jonghwan Lee
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.3
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    • pp.67-72
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    • 2023
  • In this paper, a dye-sensitized solar cell (DSSC), one of the representative third-generation solar cells with eco-friendly materials and processes compared to other solar cells, was modeled using MATLAB/Simulink. The simulation was conducted by designating values of series resistance, parallel resistance, light absorption coefficient, and thin film electrode thickness, which are directly related to the efficiency of dye-sensitized solar cells, as arbitrary experimental values. In order to analyze the performance of dye-sensitized solar cells, the optimal value among each parameter experimental value related to efficiency was found using formulas for fill factor (FF) and conversion efficiency.

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A Study on The Characteristics of Solar Cell by Thermal Shock test (열충격 시험을 통한 태양전지 특성에 관한 연구)

  • Kang, Min-Soo;Jeon, Yu-Jae;Shin, Young-Eui
    • Journal of Energy Engineering
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    • v.21 no.3
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    • pp.249-253
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    • 2012
  • In this study, The report analysed the characteristics of power drop in solar cell through thermal shock test. The solar cells were tested 500 cycles in $-40^{\circ}C$ lowest temperature and $120^{\circ}C$ highest temperature by thermal shock test on ironbound conditions, that excerpted standard of PV Module(KS C IEC-61215). The result of the efficiency analysis through measure of I-V, efficiency of Cell decreased from 13.9% to 11.0% and decreasing rate was 20.9% after test. The result of the surface analysis through EL, solar cell has damage of gridfinger and ribbon joint. Cell cracks were founded in damage of cells through cross section of solar cells. Also, Fill factors were decreased from 72.3% to 62.0% after thermal shock test and decreasing rate is 11.8%. therefore, Yearly power drop is aggravated with facts that cell crack, damage of surface and power loss of cell by change of I-V characteristic curve with decreasing of parallel resistance.

Thle New Design of a Large Area Dye-sensitized Solar Cell with Ag Grid for Improving a Design Characteristics (설계적 특성 개선을 위한 Ag 그리드를 가지는 대면적 염료감응형 태양전지의 새로운 디자인)

  • Choi, Jin-Young;Lee, Im-Geun;Hong, Ji-Tae;Kim, Mi-Jeong;Kim, Whi-Young;Kim, Hee-Je
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.123-127
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    • 2007
  • Up sizing of dye-sensitized solar cell(DSC) is the important technology to bring about commercialization of DSC. Several studies to obtain a stable large area DSC have been investigated in overseas laboratories, but have been hardly done in our country. In this study, up sizing technology of dye sensitized solar cells(DSCs) was investigated. We investigated low dark current materials for the current collecting grid. From the result, a new DSC module with metal grid was designed, and fabricated. For a new interconnection, both working and counter electrodes are alternately coupled on 10[cm]$\times$7[cm] substrate. We have achieved 68% of fill factor and photoelectric conversion efficiency of around 2.6% as the best results of new designed DSC structure.

Measurement and Analysis of Temperature Dependence for Current-Voltage Characteristics of Homogeneous Emitter and Selective Emitter Crystalline Silicon Solar Cells (Homogeneous 에미터와 Selective 에미터 결정질 실리콘 태양전지의 온도에 따른 전류-전압 특성 변화 측정 및 분석)

  • Nam, Yoon Chung;Park, Hyomin;Lee, Ji Eun;Kim, Soo Min;Kim, Young Do;Park, Sungeun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.24 no.7
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    • pp.375-380
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    • 2014
  • Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and $80^{\circ}C$), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.

Analysis of Electrical Characteristics of Silicon Solar cell according to the ARC thickness using Medici Program (메디치 프로그램을 이용한 실리콘 솔라셀의 ARC 두께에 따른 전기적 특성 해석)

  • Kim, Jae-Gyu;Kim, Ji-Man;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3853-3858
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    • 2010
  • This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray. Simulation results show maximum power 22 mW/$cm^2$, fill factor 0.83 in condition of 60 nm ITO thickness.

Degradation Behavior of Eutectic and Pb-free Solder Plated Ribbon in Crystalline Silicon Photovoltaic Module (유무연 용융도금 리본에 따른 결정질 실리콘 태양전지 모듈 열화거동)

  • Kim, Ju-Hee;Kim, A Yong;Park, Nochang;Ha, Jeong Won;Lee, Sang Guon;Hong, Won Sik
    • Journal of Welding and Joining
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    • v.32 no.6
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    • pp.75-81
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    • 2014
  • Usage of heavy metal element (Pb, Hg and Cd etc.) in electronic devices have been restricted due to the environmental banning of the European Union, such as WEEE and RoHS. Therefore, it is needed to develop the Pb-free solder plated ribbon in photovoltaic (PV) module. This study described that degradation characteristics of PV module under damp heat (DH, $85^{\circ}C$ and 85% R.H.) condition test for 1,000 h. Solar cell ribbons were utilized to hot dipping plate with Pb-free solder alloys. Two types of Pb-free solder plated ribbons, Sn-3.0Ag-0.5Cu (SAC305) and Sn-48Bi-2Ag, and an electroless Sn-40Pb solder hot dipping plated ribbon as a reference sample were prepared to evaluate degradation characteristics. To detect the degradation of PV module with the eutectic and Pb-free solder plated ribbons, I-V curve, electro-luminescence (EL) and cross-sectional SEM analysis were carried out. DH test results show that the reason of maximum power (Pm) drop was mainly due to the decrease fill factor (FF). It was attributed to the crack or oxidation of interface between the cell and the ribbon. Among PV modules with the eutectic and Pb-free solder plated ribbon, the PV module with SAC305 ribbon relatively showed higher stability after DH test than the case of PV module with Sn-40Pb and Sn-48Bi-2Ag solder plated ribbons.