• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.54-60
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• 2007

In this study novel ESD protection device, namely, N/P-type Low Voltage Triggered SCR, has been proposed, for high speed I/O interface. Proposed device could lower high trigger voltage($\sim$20V) of conventional SCR and reduce latch-up phenomenon of protection device during the normal condition. In this Study, the proposed NPLVTSCR has been simulated using TMA MEDICI device simulator for electrical characteristic. Also the proposed device's test pattern was fabricated using 90nm TSMC's CMOS process and was measured electrical characteristic and robustness. In the result, NPLVTSCR has 3.2V $\sim$ 7.5V trigger voltage and 2.3V $\sim$ 3.2V holding voltage by changing PMOS gate length and it has about 2kV, 7.5A HBM ESD robustness(IEC61000-4-2).

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.790-795
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• 1998

Fabrication of inverted staggered power TFT devices and electrical characteristic were investigated. 16 fingers with drain and source electrode of TFT and 100V output voltage were designed successfully. It is observed that as $V_g$ increased, $I_d$ increase exponentially. Because of localized deep states of a-Si, $I_d$ shows irregular variation at low voltage. Output and transfer characteristic showed the same as typical variation. But electrical characteristic strongly depend on the channel length and thickness of silicon nitride and amorphous silicon.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.150-152
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• 2002

This paper, experiment manufactures device of Metal/Poly-$\gamma-Benzyl\;_D-Glutamate$ Organic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Dielectric constant of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• Journal of Electrical Engineering and Technology
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• v.10 no.2
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• pp.504-510
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• 2015

Because wind generators (WGs) in a wind power plant (WPP) produce different active powers due to wake effects, the reactive power capability of each WG is different. This paper proposes a hierarchical voltage control scheme for a WPP that uses a WPP controller and WG controller. In the proposed scheme, the WPP controller determines a voltage error signal by using a PI controller and sends it to a doubly-fed induction generator (DFIG). Based on the reactive current-voltage ($I_Q-V$) characteristic of a DFIG, the DFIG injects an appropriate reactive power corresponding to the voltage error signal. To enhance the voltage recovery capability, the gains of the $I_Q-V$ characteristic of a DFIG are modified depending on its reactive current capability so that a DFIG with greater reactive current capability may inject more reactive power. The proposed scheme enables the WPP to recover the voltage at the point of common coupling (PCC) to the nominal value within a short time after a disturbance by using the adaptive $I_Q-V$ characteristics of a DFIG. The performance of the proposed scheme was investigated for a 100 MW WPP consisting of 20 units of 5 MW DFIGs for small and larger disturbances. The results show the proposed scheme successfully recovers the PCC voltage within a short time after a disturbance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.79-84
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• 2008

We are developing a small-sized high temperature superconducting magnetic energy storage (HTS-SMES) magnet with the nominal storage capacity of 600 kJ, which provides electric power with high quality to sensitive electric loads. Critical current and N-value of a high temperature superconductor with large current, which was selected for the development of the 600 kJ HTS-SMES magnet, were investigated in various oblique external magnetic fields. Based on the critical current and N-value measured for the short sample conductor, we discussed the DC V - I characteristic of a model coil fabricated with the same conductor of 500 m. The results show that the measured critical current and N-value of the conductor for parallel field are constant in external magnetic fields less than about 0.2 T. However, for oblique fields, its critical current and N -value abruptly decrease in all external magnetic fields. Moreover, the measured critical current of the model coil well agrees with the numerically calculated one based on the DC V - I characteristic measured for the short sample conductor. This suggest that losses and critical currents for an HTS-SMES magnet made up of a high temperature superconductor with anisotropic characteristic are predictable from the data of a short sample conductor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.847-851
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• 2011

Photovoltaic System is increasing install capacity based on environmental-friendly characteristics. It have been actively studied to improve the efficiency. In order to design highly efficient system, it is important to understand the output characteristics of solar panels. The single diode model can represent the physical characteristics of solar panel. But it needs complex process such as mutli-step measurement and numerical analysis to get the exact parameters. In this paper, The method for extracting characteristic parameters of the single diode model based on the I-V characteristic curves in the panel manufacturer's data-sheet is presented. To verify the proposed method, solar cell model constructed in simulink. Simulink model output compared with output graph in datasheet.

• Journal of the Korean Solar Energy Society
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• v.29 no.4
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• pp.1-6
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• 2009

This paper estimates numerically cells the electrical characteristics of the PV module with environmental changes such as shunt resistance, series resistance, temperature, irradiance. Series resistance $R_s$ including diode characteristic resistance $r_d$ is derived from the p-n junction diode model. I-V characteristics of this model with series resistance $R_s$ are simulated on Matlab. Finally, theoretical I-V characteristics are compared with those of solar simulator. Those results agreed well within the manufacturer's maximum error range 3%

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.9
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• pp.609-618
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• 1988

Two dimensional numericl analysis program of power VDMOSFET structure has been developed. Modeling for equipotential distribution, current flow pattern and carrier distribution are presented. I-V characteristic curves due to saturation velocity, mobility value, transconductance and on-resistance are studied by comparison of computer simulated results and exeperimental data. These are found to agree with the simulated results and experimental data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.52-56
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• 2004

The movement of electron in the semiconductor-gap-semiconductor was observed by the variation of V-I characteristic as a distance two ZnO(1010) single crystals. When the resistance between two crystals was $10^2{\sim}10^4{\Omega}$, V-I characteristics had the pattern of the field emission or ohmic contact. On the other hand, when the resistance was larger than $10^7{\Omega}$ by increasing the distance between two crystals, the effect of surface barrier was prominent. This result leads to the conclusion that both the field emission (or ohmic contact) and the surface barrier effect including the tunneling have the influence on V-I characteristics of mechanically contacted crystals.