A Study on V-I characteristics depend on a distance between semiconductor-semiconductor

반도체-반도체 사이의 거리 변화에 따른 전압-전류 특성 연구

The movement of electron in the semiconductor-gap-semiconductor was observed by the variation of V-I characteristic as a distance two ZnO(1010) single crystals. When the resistance between two crystals was $10^2{\sim}10^4{\Omega}$, V-I characteristics had the pattern of the field emission or ohmic contact. On the other hand, when the resistance was larger than $10^7{\Omega}$ by increasing the distance between two crystals, the effect of surface barrier was prominent. This result leads to the conclusion that both the field emission (or ohmic contact) and the surface barrier effect including the tunneling have the influence on V-I characteristics of mechanically contacted crystals.