• Title/Summary/Keyword: I-D threshold

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A Study on Corrosion Fatigue Crack Growth Behavior in Al-Alloy 7075-T651 (I) (Al-Alloy 7075-T651의 부식피로균열 성장거동에 관한 연구(I))

  • 김봉철;한지원;우흥식
    • Journal of the Korean Society of Safety
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    • v.13 no.4
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    • pp.113-120
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    • 1998
  • Fatigue crack growth rates(i.e. crack initiation and crack growth of short and long crack) are investigated using commercial plates of high strength Al alloy 7075-T651 for the transverse-longitudinal(T-L) direction in air, water and sea water. Also, the evaluation direct current potential drop(D.C.P.D) method and the fractographical analysis by SEM are carried out. Near threshold region, short crack growth rates were much faster than those of comparable long cracks, and these short crack growth rates actually decrease with increasing crack growth and eventually merge with long crack data. Fatigue crack propagation rates in aggressive media(i.e. sea water) increase noticeably over three times those in air. One of the most significant characters in this phenomenon as a corrosion-fatigue causes an acceleration in crack growth rates. Sea water environment, particularly Cl$^{[-10]}$ solution brings the most detrimental effects to aluminum alloy. The result of fractographical morphology in air, water and sea water by SEM shows obvious dimpled rupture and typical striation in air, but transgranular fracture surface in water and sea water.

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A Clinical Evaluation of DITI and Neurometer for the Diagnosis of Cold Hypersensitivity (냉증 진단을 위한 DITI와 말초신경검사의 임상적 평가)

  • Lee, Kyung-Sub
    • Journal of Oriental Medical Thermology
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    • v.3 no.1
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    • pp.60-66
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    • 2004
  • Purpose This study is to examine of Neurometer for the diagnosis of cold hypersensitivity Method Among patients who visited the oriental gynecological department in Kangnam Korean Hospital from October. 2000 to December. 2000, 37 women were diagnosed as cold hypersensitivity by D.I.T.I. We measured the limbs' temperature by D.I.T.I. and Current perception threshold(CPT) of median N., ulnar N., radial N., peroneal N., sural N., tibial N., saphenous N. by neurometer Patients were divided into mild and severe group depending on the temperature difference between proximalis and distalis in limbs Result and Conclusion 1. In severe group, CPT of median N., ulnar N., radial N. was higher on 250Hz and 200Hz. 2. In severe group, Mean CPT of peroneal N., sural N., tibial N., saphenous N. was higher on every Hz.

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Optimization of Gate Stack MOSFETs with Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.228-239
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    • 2004
  • In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

질소 첨가된 GeSe 비정질 칼코지나이드 박막을 이용한 OTS (Ovonic threshold switching) 소자의 switiching 특성 연구

  • An, Hyeong-U;Jeong, Du-Seok;Lee, Su-Yeon;An, Myeong-Gi;Kim, Su-Dong;Sin, Sang-Yeol;Kim, Dong-Hwan;Jeong, Byeong-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.78.2-78.2
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    • 2012
  • 최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

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A Study of Fatigue Crack Threshold Characteristics in Pressure Vessel Steel at Low Temperature (압력용기용 강의 저온 피로 크랙 하한계 특성에 관한 연구(I))

  • Park, K.D.;Ro, T.Y.;Kim, Y.T.;Kim, H.J.;Oh, M.S.;Lee, K.L.;Kim, J.H.
    • Journal of Power System Engineering
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    • v.4 no.1
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    • pp.81-87
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    • 2000
  • In this study, CT specimens were prepared from ASTM SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C,\;-60^{\circ}C,\;-80^{\circ}C\;and\;-100^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\Delta}K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range ${\Delta}K$ in the stable of fatigue crack growth (Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm $d{\alpha}/dN\;-{\Delta}K$ in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate $d{\alpha}/dN$ is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

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FRACTAL DIMENSIONS OF INTERSTELLAR MEDIUM: II. THE MOLECULAR CLOUDS ASSOCIATED WITH THE HII REGION SH 156

  • Lee, Young-Ung;Kang, Mi-Ju;Kim, Bong-Kyu;Jung, Jae-Hoon;Kim, Hyun-Goo;Yim, In-Sung;Kang, Hyung-Woo;Choi, Ji-Hoon
    • Journal of The Korean Astronomical Society
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    • v.41 no.6
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    • pp.157-161
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    • 2008
  • We have estimated the fractal dimension of the molecular clouds associated with the Hii region Sh 156 in the Outer Galaxy. We selected the $^{12}CO$ cube data from the FCRAO CO Survey of the Outer Galaxy. Using a developed code within IRAF, we identified slice-clouds (2-dimensional clouds in velocity-channel maps) with two threshold temperatures to estimate the fractal dimension. With the threshold temperatures of 1.8 K, and 3 K, we identified 317 slice-clouds and 217 slice-clouds, respectively. There seems to be a turn-over location in fractional dimension slope around NP (area; number of pixel) = 40. The fractal dimensions was estimated to be D = $1.5\;{\sim}\;1.53$ for $NP\;{\geq}\;40$, where $P\;{\propto}\;A^{D/2}$ (P is perimeter and A is area), which is slightly larger than other results. The sampling rate (spatial resolution) of observed data must be an important parameter when estimating fractal dimension. Fractal dimension is apparently invariant when varying the threshold temperatures applied to slice-clouds identification.

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

  • Kwon, Sung-Kyu;Kwon, Hyuk-Min;Kwak, Ho-Young;Jang, Jae-Hyung;Shin, Jong-Kwan;Hwang, Seon-Man;Sung, Seung-Yong;Lee, Ga-Won;Lee, Song-Jae;Han, In-Shik;Chung, Yi-Sun;Lee, Jung-Hwan;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.655-661
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    • 2013
  • In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

Center of Photon Mass as a Unified Design Parameter I : DFB Lasers with Low-and High-reflection Faets (DFB 레이저의 통합된 설계 변수로서으 광자 분포 중심 I : 저 반사면-고 반사면 구조)

  • Kim, Sung-Han;Kim, Sang-Bae
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.53-62
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    • 1999
  • Center of photon mass(CPM), defined as the center of axial photon distribution, is proposed as a unified design parameter, which contains information about both threshold gain and nonuniformity of axial photon distribution in DFB lasers with low and high-reflection facets. The CPM is inversely proportional to threshold gain and is 0.5 when axial photon distribution is the most uniform. Therefore, a general rule of single-frequency leser design is that main mode CPM should be around 0.5 for-uniform axial photon distribution and side mode CPM should be minimized to maximize the threshold gain difference.

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The thickness effect on surface and electrical properties of PVP layer as insulator layer of OTFTs (OTFT 소자의 절연층으로써 두께에 따른 PVP 층의 표면 및 전기적 특성)

  • Seo, Choong-Seok;Park, Yong-Seob;Park, Jae-Wook;Kim, Hyung-Jin;Yun, Deok-Yong;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.245-245
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    • 2008
  • In this work, we describe the characterization of PVP films synthesized by spin-coater method and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on Au gate electrode. We investigated the surface and electrical properties of PVP layer using an AFM method and MIM structure, and estimated the device properties of OTFTs including $I_D-V_D$, $I_D-V_G$, threshold voltage $V_T$, on/off ratio, and field effect mobility.

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Analysis on the Risk-Based Screening Levels Determined by Various Risk Assessment Tools (III): Proposed Methodology for Lead Risk Assessment in Korea (다양한 위해성평가 방법에 따라 도출한 토양오염 판정기준의 차이에 관한 연구(III): 우리나라 납 오염 위해성평가 방법 제안)

  • Jung, Jae-Woong;Nam, Kyoungphile
    • Journal of Soil and Groundwater Environment
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    • v.20 no.6
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    • pp.1-7
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    • 2015
  • The most critical health effect of lead exposure is the neurodevelopmental effect to children caused by the increased blood lead level. Therefore, the endpoint of the risk assessment for lead-contaminated sites should be set at the blood lead level of children. In foreign countries, the risk assessment for lead-contaminated sites is conducted by estimating the increased blood lead level of children via oral intake and/or inhalation (United States Environmental Protection Agency, USEPA), or by comparing the estimated oral dose to the threshold oral dose of lead, which is derived from the permissible blood lead level of children (Dutch National Institute for Public Health and the Environment, RIVM). For the risk assessment, USEPA employs Integrated-Exposure-Uptake-Biokinetic (IEUBK) Model to check whether the estimated portion of children whose blood lead level exceeds 10 µg/dL, threshold blood lead level determined by USEPA, is higher than 5%, while Dutch RIVM compares the estimated oral dose of lead to the threshold oral dose (2.8 µg/kg-day), which is derived from the permissible blood lead level of children. In Korea, like The Netherlands, risk assessment for lead-contaminated sites is conducted by comparing the estimated oral dose to the threshold oral dose; however, because the threshold oral dose listed in Korean risk assessment guidance is an unidentified value, it is recommended to revise the existing threshold oral dose described in Korean risk assessment guidance. And, if significant lead exposure via inhalation is suspected, it is useful to employ IEUBK Model to derive the risk posed via multimedia exposure (i.e., both oral ingestion and inhalation).