• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.119-119
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• 2002

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.23-29
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• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.5
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• pp.386-393
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• 2008

The Sulfur-iodine(SI) thermochemical cycle is one of the most promising methods for massive hydrogen production. For the purpose of continuous operation of SI cycle, phase separation characteristics into two liquid phases ($H_2SO_4$-rich phase and $HI_x$-rich phase) were directly investigated via Bunsen reaction. The experiments for Bunsen reaction were carried out in the temperature range, from 298 to 333 K, and in the $I_2/H_2O$ molar ratio of $0.109{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the results, solubility of $SO_2$, decreased with increasing the temperature, had considerable influence on the global composition in the Bunsen reaction system. The amounts of impurity in each phase(HI and $I_2$ in $H_2SO_4$-rich phase and $H_2SO_4$ in $HI_x$-rich phase) were decreased with increasing $H_2SO_4$ molar ratio and temperature. To control the amounts of impurity in $HI_x$-rich phase, temperature is a factor more important than $I_2/H2_O$ molar ratio. On the other hand, the affinity between $HI_x$ and $H_2O$ was increased with increasing $I_2/H2_O$molar ratio.

• Journal of Environmental Health Sciences
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• v.45 no.2
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• pp.186-191
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• 2019

Objectives: Subway is one of the most common transportation modes in Seoul, Korea. The objectives of this study were to determine characteristics of in-cabin $PM_{2.5}$ concentration in Seoul Metro Line Number 2 and to identify factors of the $PM_{2.5}$ concentration. Methods: In-cabin $PM_{2.5}$ concentrations in Seoul Metro Line Number 2 were measured using real-time monitors and the factors affecting $PM_{2.5}$ concentration in cabin were observed. Linear regression analysis of in-cabin $PM_{2.5}$ concentration and indoor/outdoor (I/O) ratio were performed. Results: In-cabin $PM_{2.5}$ concentration was associated with the in-cabin $PM_{2.5}$ concentration in previous station. In-cabin $PM_{2.5}$ concentration was correlated with ambient $PM_{2.5}$ concentration and associated with underground station with control of the in-cabin $PM_{2.5}$ concentration in previous station. I/O ratio increased as the number of passengers increased and when passing through the underground station with control of I/O ratio in previous station. Conclusion: In-cabin $PM_{2.5}$ concentration was affected by ambient $PM_{2.5}$ concentration. Therefore, management of in-cabin $PM_{2.5}$ concentrations should be based on outdoor air quality.

• Journal of KIISE:Computer Systems and Theory
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• v.27 no.5
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• pp.496-505
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• 2000

Clusters of workstations (COW) are becoming an attractive option for parallel scientific computing, a field formerly reserved to the MPPs, because their cost-performance ratio is usuallybetter than that of comparable MPPS, and their hardware and software can be easily enhanced to thelatest generations. In this paper we present the design and implementation of our runtime library forclusters of workstations, called "Collective I/O Clustering". The library provides a friendlyprogramming model for the I/O of irregular applications on clusters of workstations, being completelyintegrated with the underlying communication and I/O system. In the collective I/O clustering, two I/Oconfigurations are possible. In the first I/O configuration, all processors allocated can act as I/Oservers as well as compute nodes. In the second I/O configuration, only a subset of processors canact as I/O servers, The compression and software caching facilities have been incorporated into thecollective 1/0 clustering to optimize the communication and I/O costs. All the performance results wereobtained on the IBM-SP machine, located at Argonne National Labs.

• Resources Recycling
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• v.18 no.3
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• pp.42-48
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• 2009

Since there are $OH^-,\;[SiO_4]^{4-}$ ion of high concentration at early hydration in the system added with activator (NaOH+$Na_2OSiO_2$) in the blast furnace slag, different from cement hydration, hydration progresses fast without induction period and forms reaction rim around the blast furnace slag grain. $0.6{\mu}m$ reaction rim was formed around the blast furnace slag grain from the 1 day of reaction period, and the thickness of reaction rim increases over the reaction time, growing to $1{\mu}m$ on the 28 days. Unreacted blast furnace slag grain deformed from angular shape to the spherical shape. Mole ratio of Ca/Si tends to decrease from inside of blast furnace slag grain to reaction rim. Difference of Ca/Si mole ratio between reaction rim and inside the blast furnace slag grain decreased and generated hydrate was a poor crystalline CSH(I) with Ca/Si mole ratio less than 1.5.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1412-1413
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• 2011

Effects of thermal annealing on electrical characteristics of thin film transistors (TFTs) using hydrogenated zinc oxide (ZnO:H) films as active channel were extensively investigated. The ZnO:H films were deposited at room temperature by RF sputtering. The device parameters of the ZnO:H-based TFTs, such as threshold voltage ($V_{th}$), subthreshold swing (S.S.), and on-off current ratio ($I_{on}/I_{off}$), were characterized in terms of the annealing temperature as well as the gas flow ratio of $H_2$/Ar.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.164-168
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• 1993

Grinding of 3mol% Y-TZP enhanced the texturing of t-ZrO2, which is represented by the increased I(002)t/I(200)t peak intensity ratio, and an asymetric broadening of (111)t peak. The degree of texturing and asymetric broadening depended on a seversity of grinding. The asymetric (111)t peak broadening was resulted by the formation of r-ZrO2. When aged at 25$0^{\circ}C$ for 120h, r-ZrO2 transformed to t-ZrO2 due to the relief of stressed surface area and the amount of tlongrightarrowm transformation inversely varied with the I(002)t/I(200)t. The inverse dependence was interpreted by that the degree of texturing determines the magnitude of residual surface stress and the lattice relaxation of t-ZrO2, which causes the low temperature degradation, is retarded as the residual stress becomes greater.

• Tuberculosis and Respiratory Diseases
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• v.46 no.5
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• pp.662-673
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• 1999

Background : Pressure-controlled ventilation (PCV) is frequently used recently as the initial mode of mechanical ventilation in the patients with respiratory failure. Theoretically, because of its high initial inspiratory flow, pressure-controlled ventilation has lower peak inspiratory pressure and improved gas exchange than volume-controlled ventilation (VCV). But the data from previous studies showed controversial results about the gas exchange. Moreover, the comparison study between PCV and VCV with various inspiration : expiration time ratios (I : E ratios) is rare. So this study was performed to compare the respiratory mechanics and gas exchange between PCV and VCV with various I : E raitos. Methods : Nine patients receiving mechanical ventilation for respiratory failure were enrolled. They were ventilated by both PCV and VCV with various I : E ratios (1 : 2, 1 : 1.3 and 1.7 : 1). $FiO_2$, tidal volume, respiratory rate and external positive end-expiratory pressure (PEEP) were kept constant throughout the study. After 20 minutes of each ventilation mode, arterial blood gas, airway pressures, expired $CO_2$ were measured. Results : In both PCV and VCV, as the I : E ratio increased, the mean airway pressure was increased, and $PaCO_2$ and physiologic dead space fraction were decreased. But P(A-a)$O_2$ was not changed. In all three different I : E ratios, peak inspiratory pressure was lower during PCV, and mean airway pressure was higher during PCV. But $PaCO_2$ level, physiologic dead space fraction and P(A-a)$O_2$ were not different between PCV and VCV with three different I : E ratios. Conclusion : There was no difference in gas exchange between PCV and VCV under the same tidal volume, frequency and I : E ratio.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.