• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.685-688
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• 1992

This paper studies the commutation phenomenon in the Brushless DC Motor with the trapezoidal BEMF waveform. It is shown that the torque ripple am the speed ripple due to the phase commutation depend on driving sytem, operating speed am load condition. The effects of resistance and BEMF flat width on torque ripple are considered. Speed - torque characteristics of the motor is presented considering the phase commutation. Uncommutating current control method can attenuate the torque ripple in the low speed region, and also minimize the switching loss am switching frequency. In this paper, the commutation phenomena are verified by analytical formulation and simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.196.1-196.1
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• 2014

VO2 exhibits metal-insulator transition (MIT), of which critical temperature (TC) is about 340 K. There have been many reports that MIT can be induced by UV light as well as heat. Clear mechanism regarding such photo-induced MIT has not been clarified. We have compared the MIT behaviors of VO2 thin film during heating-cooling cycles with and without light. We tried several light sources with different wavelengths (red, blue, and UV). Tc and hysteresis width of the resistance change were influenced by the illumination of the samples. We performed Kelvin probe force microscopy (KPFM) studies, which can reveal the evolution of the local sample work function. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 samples.

• Progress in Superconductivity
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• 제4권1호
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• pp.27-31
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• 2002

MgB$_2$samples have been prepared by a stoichiometry mixture of Mg and B inside stainless steel tubes(Commercial Stainless Steel Tube Enveloping Technique). XRD data show that there are no second phases like MgO. The transition temperature of specimens is 37.5 K with a sharp transition width of ΔTc within 1K. From magnetic hysteresis measurement, flux jump was shown up to 15K, which was higher than that of samples by other methods. We have concluded that the flux jump is mainly affected by impurities and second phases.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.82-87
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• 1997

Ion-Sensitive Field-Effect Transistors(ISFETs) with LPCVD silicon nitride as a sensitive gate were fabricated on the basis of a CMOS process. The silicon nitride was deposited directly on a poly silicon gate-electrode. Using a specially designed measuring cell, the hydrogen ions sensing properties of the ISFET in liquid could be investigated without any bonding or encapsulation. At first, th sensitivity was estimated by simualtions according to the site-binding theory and the experimental results were analysed and compared with simulated results. The measured dta were in good agreement with the simulated results. The silicon nitride based ISFET has good linearity evaluated from correlation factor ($\geq$0.9998) and a mean pH-sensitivity of 56.8mV/pH. The maximum hysteresis width between forward(pH=3\longrightarrowpH=11)- and backward(pH=11\longrightarrowpH=3) titration was 16.7mV at pH=6.54.

• Journal of Magnetics
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• 제1권1호
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• pp.14-18
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• 1996

The NMR spin echo in pure iron was measured as a function of external magnetic field up to 10 kgauss at room temperature. We observed the signal coming from a single domain formed over 7.5 kgauss which has not been detected in previous works. The resonance frequency shift with external field confirmed that the hyperfine field in iron is -330.2 kgauss. From the comparison of the magnetization curve with the domain wall signal and the resonance frequency in external field, we showed that NMR could give the useful qualitative information on the magnetization process. The extent of the internal strain removed by annealing, which can be hardly seen in hysteresis curves, was clearly shown up in the NMR line-width.

• 연구논문집
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• 통권33호
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• pp.81-88
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• 2003

A metal jet printing system based on ink jet printing technique is one of the effective equipments for manufacturing elements of display devices, electrical devices, information processing systems, and so on. In order to develop an actuator of the metal jet printing system, bimorph type PZT actuator(length 25.2mm, width 7.2mm, thickness 0.5mm, shim thickness 0.2mm) and its controller(voltage range $\pm24v$, built-in fast recovery diode) were suggested and investigated. Performance tests and characteristic analysis, such as displacement, force, hysteresis and frequency, were carried out. The results show that the suggested actuator and controller are suitable for the metal jet printing system.

• Earthquakes and Structures
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• 제7권5호
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• pp.877-890
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• 2014

The purpose of this study is to present adequate modeling solutions for squat and slender RC walls. ASCE41-13 (American Society of Civil Engineers) specifies that the aspect ratios of height to width for the RC walls affect the hysteresis response. Thus, this study performed non-linear analysis subjected to cyclic loading using two different macroscopic models: one of macroscopic models represents flexural failure of RC walls (Shear Wall Element model) and the other (General Wall Element model) reflects diagonal shear failure occurring in the web of RC walls. These analytical results were compared to previous experimental studies for a slender wall (> aspect ratio of 3.0) and a squat wall (= aspect ratio of 1.0). For the slender wall, the difference between the two macroscopic models was negligible, but the squat wall was significantly affected by parameters for shear behavior in the modeling method. For accurate performance evaluation of RC buildings with squat walls, it would be reasonable to use macroscopic models that give consideration to diagonal shear.

• 전자공학회논문지B
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• 제28B권12호
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• pp.38-50
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• 1991

A current-controlled scheme of pulse width modulation voltage source inverter (PWM VSI) has attracted considerable attention due to its fast response with current limit and especially suitable for potentially high performance applications such as AC motor drives and UPS systems. These features yield near-sinusoidal currents in the load with reduced current peaks, lower inverter switching frequency and reduce inverter and load stresses. A high performance current-controlled inverter must have a quick response in transient state and low harmonic current in steady state. This paper compares and shows the controlled-characteristics with hysteresis controller(HC), ramp comparison controller(RCC) and predictive controller(PC) of PWM inverter to control actual current of VSI-IM.

• Journal of Magnetics
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• 제14권1호
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• pp.15-17
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• 2009

The magnetostatic interaction between the two magnetic nanowires was studied by using the longitudinal magneto-optical Kerr effect (MOKE). For this purpose two magnetic nanowires having different widths (400 nm, 800 nm) were fabricated on an Si substrate with electron beam lithography and the lift-off method. Magnetic hysteresis loops measured by MOKE showed double switching behavior, corresponding to the separated switching fields of each wire. The switching field of the narrow wire was greatly affected by the separation between the two wires. Based on how the switching field changes with decreasing separation, it is concluded that the magnetostatic field of the 800-nm wire strongly affects the switching of the 400-nm wire when the separation is less than $0.5{\mu}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.473-476
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• 1987

Low temperature phosphorus-nitride CVD was newly developed for a high quality gate insulator on InP substrate. This film showed the Poole-Frenkel type conduction in high electric field with resistivity higher than $1{\times}10^{14}$ ohm-cm near the electric field of $1{\times}10^7\;volt/cm$. The C-V hysteresis width was very small as 0.17 volt. The density of interface trap states was $2{\times}10^{11}cm^{-2}ev^{-1}$ below the conduction band edge of InP substrate. Effective electron mobility was about $1200-1500\;cm^2/Vsec$ and showed the instability of PN-InP MISFETs drain current reduced less than 10 percent for the period $0.5-10^3sec$.