• 제목/요약/키워드: Hydrogen deposition

검색결과 566건 처리시간 0.025초

화학기상 성장법에 의한 실리콘 부착에 관한 수치해석 (Numerical Analysis of Silicon Deposition in CVD Reactor)

  • 김인;백병준;윤정모;이철로
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집B
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    • pp.359-364
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    • 2000
  • The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.

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화학증착 탄화규소에 의한 표면 개질 (Surface Modification Using CVD-SiC)

  • 김한수;최두진;김동주
    • 한국세라믹학회지
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    • 제33권7호
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    • pp.761-770
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    • 1996
  • Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

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수중 환경에서 수소로 희석된 반응 가스를 이용하여 증착된 DLC 박막의 트라이볼로지 거동 (Tribological Behaviors of DLC Thin Films Deposited using Precursor Gas diluted by Hydrogen under Aqueous Environment)

  • 이진우;문명운;이광렬
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.338-339
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    • 2012
  • This study examined the friction and wear behavior of diamond-like carbon (DLC) films deposited from a radio frequency glow discharge using a hydrogen diluted benzene gas mixture. The DLC films were deposited on Si (100) and polished stainless steel substrates by r.f.-PACVD at hydrogen to benzene ratios, or the hydrogen dilution ratio, ranging from 0 to 2.0. The wear test was carried out in both ambient and aqueous environments using a home-made ball-on-disk type wear rig. The stability of the DLC coating in an aqueous environment was improved by diluting the benzene precursor gas with hydrogen, suggesting that hydrogen dilution during the deposition of DLC films suppress the initiation of defects in the film and improved the adhesion of the coating to the interface.

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분리막 기술을 이용한 열화학적 수소제조 IS[요오드-황] 프로세스의 개선 (Improvement of the Thermochemical water-splitting IS Process Using the Membrane Technology)

  • 황갑진;김종원;심규성
    • 한국수소및신에너지학회논문집
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    • 제13권3호
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    • pp.249-258
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    • 2002
  • Thermochemical water-splitting IS(Iodine-Sulfur) process has been investigating for large-scale hydrogen production. For the construction of an efficient process scheme, two kinds of membrane technologies are under investigating to improve the hydrogen producing HI decomposition step. One is a concentration of HI in quasi-azeotropic HIx ($HI-H_2O-I_2$) solution by elecro-electrodialysis. It was confirmed that HI concentrated from the $HI-H_2O-I_2$ solution with a molar ratio of 1:5:1 at $80^{\circ}C$. The other is a membrane reactor to enhance the one-pass conversion of thermal decomposition reaction of gaseous hydrogen iodide (HI). It was found from the simulation study that the conversion of over 0.9 would be attainable using the membrane reactor using the gas permeation properties of the prepared silica hydrogen permselective membrane by chemical vapor deposition (CVD). Design criterion of the membrane reactor was also discussed.

Depositon of Transparent Conductive Films by a DC arc Plasmatron

  • Penkov, O.V.;Plaksin, V. Yu.;Joa, S.B.;Kim, J.H.;LEE, H.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.480-480
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    • 2010
  • In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

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에어로졸 증착법(Aerosol Depostion method)에 의한 $Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI 수소분리막 제조 ($Ba(Zr_{0.85}Y_{0.15})O_{3-\delta}$-NI Composite Membrane for Hydrogen Separation by Aerosol Deposition Method)

  • 박영수;최진섭;변명섭;김진호;황광택
    • 한국수소및신에너지학회논문집
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    • 제21권4호
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    • pp.271-277
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    • 2010
  • $(Ba(Zr_{0.85}Y_{0.15})O_{3-\delta})$ oxide, showing high protonic conductivity at high temperatures and good chemical stability with $CO_2$ are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BZY-Ni layer has to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and may be applicable to the fabrication process of AD integration ceramic layer effectively. XRD, SEM, X-ray mapping measurements were conducted in order to analyze the characteristics of BZY-Ni membrane fabricated by AD process. it is observed that it is homogeneous distribution for BZY-Ni. The result of $H_2$ permeation rate suggests that BZY-Ni composite is higher than BZY.

유동층 화학증착법을 이용하여 증착한 열분해 탄소의 특성에 미치는 증착조건의 영향 (Effect of Deposition Parameters on the Properties of Pyrolytic Carbon Deposited by Fluidized-Bed Chemical Vapor Deposition)

  • 박정남;김원주;박종훈;조문성;이채현;박지연
    • 한국재료학회지
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    • 제18권8호
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    • pp.406-410
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    • 2008
  • The properties of pyrolytic carbon (PyC) deposited from $C_2H_2$ and a mixture of $C_2H_2/C_3H_6$ on $ZrO_2$ particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from $1.0\;g/cm^3$ to $2.2\;g/cm^3$ by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.

rf 플라즈마 화학기상증착기의 제작 및 특성 (Characterization and Construction of Chemical Vapor Deposition by using Plasma)

  • 김경례;김용진;현준원;이기호;노승정;최병구
    • 한국표면공학회지
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    • 제33권2호
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    • pp.69-76
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    • 2000
  • The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

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디젤 자열개질기 내 탄소침적에 관한 연구 (Study on carbon deposition in diesel autothermal reformer)

  • 윤상호;강인용;배중면
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.37-40
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    • 2007
  • Diesel autothermal reforming(ATR) is an effective method for hydrogen production. But, diesel ATR has several problems such as the sulfur poisoning of catalyst and carbon deposition during reforming reactor. Especially, carbon deposition is a severe problem, which causes rapid performance degradation, in the reforming reaction. Ethylene among the reformate gas is a carbon precursor. Effective decomposition of ethylene is an important issue. In this paper, we investigated the carbon deposition from ethylene in the reforming reaction for proper reaction condition of diesel ATR. We achieved relatively high performance of diesel ATR under $H_{2}O/C=0.8$, $O_{2}/C=3$ condition that was based on the experiment of ethylene reforming reaction.

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고주파 플라즈마 CVD에 의한 저 압력에서의 다이아몬드 막의 성장 (Deposition of diamond film at low pressure using the RF plasma CVD)

  • 구효근;박상현;박재윤;김경환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권2호
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    • pp.49-56
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    • 2001
  • Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

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