• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.191-194
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• 2004

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) 박막을 $Pt(111)/Ti/SiO_2/Si$ 기판위에 증착되었고, 수소 후열처리 후의 특성변화를 연구하였다. 동시에 10 nm의 $(Pb_{0.72}La_{0.28})Ti_{0.94}O_3$ (PLT) buffer를 사용한 PZT 박막의 수소 후열처리 효과를 관찰하였다. PZT 박막의 경우, 수소 후열처리 전과 후에 강유전 특성이 현저하게 감소한 반면, PLT buffer가 사용된 PZT 박막의 경우, 강유전 특성에 거의 변화가 없었다. 이는 PLT buffer를 사용함으로써 PZT 박막의 배향성이 향상되고, 이에 따라 forming gas에 의한 수소원자가 박막 내로의 침투가 어렵게 된다. 따라서 수소원자에 대한 PZT 박막의 열화되는 현상이 buffer를 사용하는 경우, 거의 나타나지 않게 된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• 한국표면공학회지
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• 제50권2호
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• pp.125-130
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• 2017

ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

• 한국수소및신에너지학회논문집
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• 제32권4호
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• pp.212-218
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• 2021

In this study, we conducted a design optimization of the Type 4 composite pressure vessels to enhance the pressure-resistant performance of the vessels while keeping the thickness of the composite layer. The design variables for the optimization were the stacking angles of the helical layers of the vessels to improve the performance. Since the carbon fibers are expensive material, it is desirable to reduce the use of the carbon fibers by applying an optimal design of the composite pressure vessel. The structural analysis and optimization process for the design of Type 4 composite pressure vessels were carried out using a commercial finite element analysis software, Abaqus and a plug-in for automated simulation, Isight, respectively. The optimization results confirmed the performance and safety of the optimized Type 4 composite pressure vessels was enhanced by 12.84% compared to the initial design.

• 한국진공학회지
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• 제1권1호
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• pp.78-82
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• 1992

W(123) 표면위에 수소와 중소수가 흡착될 때 일함수의 변화를 장방출(Field Fmission) 방법으로 측정하였다. 78K에서 이 분자들이 흡착될 때 일함수의 변화는 처음에 는 증가하다가 최대치에 이른 후 감소하였고, 덮임율(coverage)이 증가함에 따라 포화되었 다. 텅스텐 tip의 온도를 200K까지 올렸을 경우에, 일함수의 변화가 최대가 되었을 때의 덮 임율은 78K일 때의 비해 낮은 덮임율 쪽으로 이동하였고, [011] 방향을 갖는 step 혹은 terrace에 의한 일함수의 효과도 동시에 관측되었다.

• 한국진공학회지
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• 제5권1호
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• pp.73-76
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• 1996

We have prepared hydrogenated amophous silicon (a-si : H) films with superlattice structure by hydrogen radical anneling(HRA) technique. We have studied the preparation of a-Si :H films by HRA and the optical & electronic characteristics. Optical band gap and the hydrogen contents in the a Si : H film is decreased as HRA time increased. We first report a -Si : H film prepared by periodicdeposition of a-Si : H layer and HRA have the superlattice structure using TEM . After 1 hour light soaking on the a-Si :H film prepared by HRA, there are no difference in the temperatre dependence of dark conductivity and the conductivity activation energy. An excellent stability for light in a-Si :H films by HRA can be explained using the long-range structural relaxation of the amorphous network and the propertiesof light -induced defects(LID) proposed by Fritzsche.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.55-59
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• 1990

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.255-262
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• 2020

Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiO_x layer- interfacial layer-crystalline system that is similar to the Si-SiO₂ system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiO_x layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.29-30
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• 2005

Experimental results are presented for the degradation of 3 nm-thick gate oxide ($SiO_2$) under both Negative-bias Temperature Instability(NBTI) and Hot-carrier-induced(HCI) stresses using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (1~5 atm.). Statistical parameter variations depend on the stress conditions. We suggest that deuterium bonds in $SiO_2$ film is effective in suppressing the generation of traps related to the energetic hot electrons.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.151-151
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• 2000

We have studied the atomic structure of Si(100)-c(4$\times$4) reconstruction using scanning tunneling microscopy(STM). The c(4$\times$4) reconstruction can be formed by annealing the hydrogen exposured surface at temperatures between 850 and 960 K. At this temperature ranges, adsorbed hydrogen atoms are all desorbed. Therefore, the c(4$\times$4) reconstruction is due to the Si dimers on surface. The filled and empty state images of the STM were interpreted in terms of Si dimers in c(4$\times$4) primitive cell forming the reconstruction. Based on the STM images and hydrogen adsorption experiment on c(4$\times$40 surface, we suggest that Si dimers in c(4$\times$40 unit cell are perpendicular ad-dimer to the underlying Si dimer rows.