• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.59-63
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• 2017

The n-type GaN semiconductor has excellent properties as a photoelectrode, but it has disadvantage that its reliability is deteriorated due to the photocorrosion because the oxygen reaction occurs on the surface. For this reason, there are fundamental attempts to avoid photocorrosion reaction of GaN surfaces by using the p-type GaN as a photoelectrode where hydrogen generation reaction occurs on the surface. However, p-type GaN has a problem of low efficiency because of its high resistivity and low hole mobility. In this study, we try to improve the photocurrent efficiency by activation process for the p-type GaN. The p-type GaN was annealed for 1 min. at $500^{\circ}C$ in $N_2$ atmosphere. Hall effect measurement system was used for the electrical properties and potentiostat (PARSTAT4000) was used to measure the photoelectrochemical (PEC) characteristics. Consequently, the photocurrent density was improved more than 1.5 times by improving the activation process for the p-type GaN. Also, its reliability was maintained for 3 hours.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.85-89
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• 2021

AlGaN-based UV-C light-emitting diodes (LEDs) were applied for p-type activation by electrochemical potentiostatic activation (EPA). The p-type activation efficiency was increased by removing hydrogen atoms through EPA treatment using a neutral Mg-H complex that causes high resistance and low conductivity. A neutral Mg-H complex is decomposed into Mg^- and H⁺ depending on the key parameters of solution, voltage, and time. The improved hole carrier concentration was confirmed by secondary ion mass spectroscopy (SIMS) analysis. This mechanism eventually improved the internal quantum efficiency (IQE), the light extraction efficiency, the leakage current value in the reverse current region, and junction temperature, resulting in better UV-C LED lifetime. For systematic analysis, SIMS, Etamax IQE system, integrating sphere, and current-voltage measurement system were used, and the results were compared with the existing N₂-annealing method.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.49-55
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• 1997

ZnO thin film had been deposited on the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was $1{\times}10^{-3}$Torr at room temperature, thin lam deposited had strongly oriented c-axis and the lowest resistivity($1{\times}10^{-4}{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were $6.27{\times}10^{20}cm^{-3}$ and $22.04cm^{2}/V{\cdot}s$, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut of the ultraviolet range below 320nm and the infrared range above 850nm. And after annealing in hydrogen atmosphere, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.

• Tribology and Lubricants
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• v.26 no.6
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• pp.317-321
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• 2010

Thin films of tin sulphide (SnS) have been formed by a novel 2-stage process where-in D.C. magnetron sputtering was used to deposit to thin films of tin (Sn) and the layers then sulphidised using 5% hydrogen sulphide ($H_2S$) gas in Argon. Although it was not found possible to deposit high quality thin films of tin directly onto glass substrates, excellent layers of tin were produced by using molybdenum (Mo) coated glass as the substrate material. The chemical and physical properties of the SnS layers formed were determined using scanning electron microscopy, energy dispersive x-ray analysis, x-ray diffraction studies and using reflectance versus wavelength measurements and these related to the conditions of synthesis. The data shows that it should be possible to produce conventional "substrate structure" devices based on the use of this technology.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.354-361
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• 1999

The films annealed after physical deposition of titanium and chemical deposition of amorphous silicon by plasma were formed Si-rich titanium silicide with a good quality of crystallinity and had the various lattice structures due to orientation of lattices for epitaxy growth during annealing process. Band gap of the titanium silicide had 1.14~1.165 eV and the films annealed after chemical deposition of a-Si:H by plasma were influenced by a-Si and the dangling bond offered by desorption of hydrogen. Urbach tail ($E_0$) of the films annealed after physical deposition of Ti was nearly constant within a range of 0.045~0.05 eV, and the number of defect in films annealed after chemical deposition of a-Si:H by plasma was about 2~3 times more than that in annealed Ti/Si films.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.20-25
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• 1999

The effect of different plasma surface preparation and oxidation processes for the formation of $SiO_2-Si$(100) interfaces was studied using angle resolved uv-photoelectron spectroscopy. The surface preparation processes included ex situ preclean as well as in situ hydrogen plasma, which were compared to the processes of UHV annealing at high temperature. The spectral position of the oxide valence band features, with respect to the Fermi level. Were found to shift according to the different processes of surface preparation and oxidation. The shifts were analyzed in terms of band bending in the Si. Origins of the spectral shifts were considered to include defects at the $SiO_2Si$ interfaces and surface morphology(roughness) dependent on the surface preparation processes. From comparison of the ARUPS results of the various processes, it was concluded that the interface bonding of the silicon oxide-showed the lowest band bending.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.