• Bulletin of the Korean Chemical Society
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• 제26권12호
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• pp.1946-1952
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• 2005

New group 15 organometallic compounds, M$(phenanthrenyl)_3$ (M = P (1), Sb (2), Bi (3)) have been prepared from the reactions of 9-phenanthrenyllithium with $MCl_3$. A reaction of 9-(diphenylphosphino)phenanthrene with 2,6-diisopropylphenyl azide led to the formation of (phenanthrenyl)${(Ph)}_2P$=N-(2,6-$^iPr_2C_6H_3$) (4). The crystal structures of 2 and 4 have been determined by single-crystal X-ray diffractions, both of which crystallize with two independent molecules in the asymmetric unit. Compound 2 shows a trigonal pyramidal geometry around the Sb atom with three phenanthrenyl groups being located in a screw-like fashion with an approximately $C_3$ symmetry. A significant amount of CH- -$\pi$ interaction exists between two independent molecules of 4. The phosphorus center possesses a distorted tetrahedral environment with P-N bond lengths of 1.557(3)$\AA$ (P(1) N) and 1.532(3)$\AA$ (P(2)-N), respectively, which are short enough to support a double bond character. One of the most intriguing structural features of 4 is an unusually diminished bond angle of C-N-P, attributable to the hydrogen bonding of N(1)-H(5A) [ca. 2.49$\AA$ between two adjacent molecules in crystal packing. The compounds 1-3 show purple emission both in solution and as films at room temperature with emission maxima ($\lambda_{max}$) at 349, 366, and 386 nm, respectively, attributable to the ligand centered $\pi$ $\rightarrow$ $\pi^\ast$ transition in phenanthrene contributed by the lone pair electrons of the Gp 15 elements. Yet the nature of luminescence observed with 4 differs in that it originates from $\pi$ (diisopropylbenzene)-$\pi^\ast$ (phenanthrene) transitions with the $\rho\pi$contribution from the nitrogen atom. The emission maximum of 4 is red-shifted ranging 350-450 nm due to the internal charge transfer from the phenanthrenyl ring to the N-arylamine group as deduced from the ab initio calculations.

• Journal of Preventive Medicine and Public Health
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• 제26권4호
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• pp.587-598
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• 1993

Hydrofluoric acid is one of the strongest irritating, corrosive and poisonous inorganic chemicals. Hydrofluoric acid burns are occurring with ever-increasing frequency due to the wide use of this acid in industries. Hydrofluoric acid burns are characterized by severe progressive tissue destruction and excruciating pain due to the unique properties of the freely dissolvable fluoride ion. The authors reviewed medical records of 32 cases (36 spells) of hydrofluoric acid burns which occurred in a hydrofluoric acid manufacturing factory from Sep. 1, 1990 to June 30, 1993. The results are as follows; 1. Eleven measurements of air concentrations of hydrofluoric acid by detection tube method from 1990 to 1992 were all below TLV (Department of Labor, R.O. K). 2. There were 19 cases (22 spells) of hydrofluoric acid burns which occurred during the study period among regular employees. The overall incidence density of hydrofluoric acid was 17.8 cases (20.6 spells) per 100 person-year. Incidence density was 19.0 cases (22.0 spells) per 100 person-year among male workers and there were no female cases. Incidence density was 32.9 cases (38.3 spells) per 100 person-year among production workers and 1.9 cases (1.9 spells) per 100 person-years among management workers with the difference being statistically significant (P<0.01). 3. Of 32 cases (36 spells) of hydrofluoric acid burns among workers who were regularly employed or temporarily employed, 26 spells (81.2%) were between age 20 to 39. In 15 spells(41.7%) burns occurred between 12:00 and 17:59 with 16 spells(44.3%) having arrived at hospital within 2 hours after the accident. 4. Of 36 spells, the main cause of hydrofluoric acid burns were by splashes (8 spells, 22.2 %). The most frequent site of burns were fingers and pain was the most frequent symptom. Thirty spells (83.3%) of the hydrofluoric acid burns were treated with local injection of antidote (calcium gluconate). Complete recovery without scarring were observed in most of the cases (34 out of 36 cases, 94.4%). The study results suggest that to prevent hydrofluoric acid burns, environmental control and the wearing of hydrofluoric acid resistant protective clothes and gloves are important. It is also stressed that establishment of an emergency management and a transfer system for hydrofluoric acid burn victims is necessary.

• 한국결정학회지
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• 제16권1호
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• pp.43-53
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• 2005

알칸화합물(alkanes)에서 탄소-수소결합을 활성화시켜서 더욱 값이 비싸고 더 유용한 알켄화합물(alkenes)로 만들 수 있는 촉매를 만들고자 지난 수 십 년간 많은 화학자들이 연구해왔다 이러한 목적의 하나로서 두개의 수소를 가지는 이리디움 P-C-P핀서(pincer) 착물 $(IrH_2{C_6H_3-2,6-(CH_2PBu_2^t)_2})$을 성공적으로 합성하였다. 이 착물은 알칸의 탈수소화반응(dehyrogenation)에 아주 효과적인 촉매로 알려졌다 알칸의 탈수소화반응에 촉매독으로 작용하는 질소, 물, 이산화탄소 및 일산화탄소와 같은 작은 화합물들과 직접 반응시켜서 어떻게 촉매독으로 작용하는지를 알아봤다. 촉매독으로 작용할 수 있는 화합물들을 합성하여 핵자기공명분광법(NMR)과 적외선분광법(IR)으로 확인하였고 분자구조를 알아보기 위해서 단결정X-ray 회절법을 통하여 확인하였다. 본 논문에서는 촉매 및 촉매독물질의 합성과 분자구조와 각각의 화합물의 반응성과 특이성을 알아보았다.

• BMB Reports
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• 제38권5호
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• pp.609-618
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• 2005

$\gamma$-Glutamyl transpeptidase (GGT, EC 2.3.2.2.) catalyzes the transfer of the $\gamma$-glutamyl moiety from $\gamma$-glutamyl containing ompounds, notably glutathione (GSH), to acceptor amino acids and peptides. A second gene (GGTII) encoding GGT was previously isolated and characterized from the fission yeast Schizosaccharomyces pombe. In the present work, the GGTII-lacZ fusion gene was constructed and used to study the transcriptional regulation of the S. pombe GGTII gene. The synthesis of $\beta$-galactosidase from the GGTII-lacZ fusion gene was significantly enhanced by NO-generating SNP and hydrogen peroxide in the wild type yeast cells. The GGTII mRNA level was increased in the wild-type S. pombe cells treated with SNP. However, the induction by SNP was abolished in the Pap1-negative S. pombe cells, implying that the induction by SNP of GGTII is mediated by Pap1. Fermentable carbon sources, such as glucose (at low concentrations), lactose and sucrose, as a sole carbon source, enhanced the synthesis of $\beta$-galactosidase from the GGTII-lacZ fusion gene in wild type KP1 cells but not in Pap1-negative cells. Glycerol, a non-fermentable carbon source, was also able to induce the synthesis of $\beta$-galactosidase from the fusion gene, but other non-fermentable carbon sources such as acetate and ethanol were not. Transcriptional induction of the GGTII gene by fermentable carbon sources was also confirmed by increased GGTII mRNA levels in the yeast cells grown with them. Nitrogen starvation was also able to induce the synthesis of $\beta$-galactosidase from the GGTII-lacZ fusion gene in a Pap1-dependent manner. On the basis of the results, it is concluded that the S. pombe GGTII gene is regulated by oxidative and metabolic stress.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.417-423
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• 2007

Oxy-gasification or oxygen-blown gasification, enables a clean and efficient use of coal and opens a promising way to CO2 capture. The coal gasification process of a slurry feed type, entrained-flow coal gasifier was numerically predicted in this paper. The purposes of this study are to develop an evaluation technique for design and performance optimization of coal gasifiers using a numerical simulation technique, and to confirm the validity of the model. By dividing the complicated coal gasification process into several simplified stages such as slurry evaporation, coal devolatilization, mixture fraction model and two-phase reactions coupled with turbulent flow and two-phase heat transfer, a comprehensive numerical model was constructed to simulate the coal gasification process. The influence of turbulence on the gas properties was taken into account by the PDF (Probability Density Function) model. A numerical simulation with the coal gasification model is performed on the Conoco-Philips type gasifier for IGCC plant. Gas temperature distribution and product gas composition are also presented. Numerical computations were performed to assess the effect of variation in oxygen to coal ratio and steam to coal ratio on reactive flow field. The concentration of major products, CO and H2 were calculated with varying oxygen to coal ratio (0.2-1.5) and steam to coal ratio(0.3-0.7). To verify the validity of predictions, predicted values of CO and H2 concentrations at the exit of the gasifier were compared with previous work of the same geometry and operating points. Predictions showed that the CO and H2 concentration increased gradually to its maximum value with increasing oxygen-coal and hydrogen-coal ratio and decreased. When the oxygen-coal ratio was between 0.8 and 1.2, and the steam-coal ratio was between 0.4 and 0.5, high values of CO and H2 were obtained. This study also deals with the comparison of CFD (Computational Flow Dynamics) and STATNJAN results which consider the objective gasifier as chemical equilibrium to know the effect of flow on objective gasifier compared to equilibrium. This study makes objective gasifier divided into a few ranges to study the evolution of the gasification locally. By this method, we can find that there are characteristics in the each scope divided.

• 한국산림과학회지
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• 제89권3호
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• pp.405-413
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• 2000

본 연구는 산림 기상 수문 환경의 모니터링을 위해 온도, 풍향, 풍속, 강우량, V노치의 수위, 계류수의 전기전도도 및 pH 등의 인자를 대상으로 하여 마이크로프로세서에 의한 전동식 센서유니트를 작동시켜 자동관측이 가능한 시스템을 개발하고자 실시하였으며, 그 결과는 다음과 같다. 1. 관측시스템은 크게 신호처리부, 전동식센서부, 전원제어부 그리고 무선데이터 통신부로 구성하였다. 2. 웨어부착형 전동식 센서유니트를 채택하여 계류수의 결빙 및 급류에 의한 센서의 파손을 방지하도록 하였으며, 동시에 항상 일정한 수위에서 측정이 이루어지도록 하였다. 3. 관측시스템에서 데이터의 전송은 무선 모뎀을 사용하여 산림유역의 수문 상황을 실시간 모니터링이 가능하도록 하였다. 4. 관측시스템은 각 기능별 독립구조의 모듈형태로 구성하여 측정 모듈의 수리, 교체, 추가 등의 변경이 가능하도록 하였다. 5. 관측시스템의 성능 시험을 실시한 결과 온도, EC, pH는 각각 최대 ${\pm}0.2^{\circ}C$, ${\pm}1{\mu}S$, ${\pm}0.1pH$의 오차범위 내에서 관측되었다. 6. 현장에서 관측시스템을 시험 운영해 본 결과 장기적이고 안정적인 산림 수문 수질 인자의 측정이 가능할 것으로 평가되었다.

• 대한화장품학회지
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• 제44권2호
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• pp.201-210
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• 2018

본 연구에서는 원적외선 방사체로 알려져 있는 준 보석 광물인 옥(jade)의 한 종류인 경옥(jadeite) 파우더를 함유하는 스킨 케어용 O/W 유화 제형을 제조하였다. 경옥 파우더는 화장품 원료로 기 등록된 옥의 다른 한 종류인 연옥(nephrite) 파우더나, 자외선 차단을 목적으로 화장품에 적용되는 이산화티탄 파우더와는 달리, 아무런 분산 첨가제 없이도 수상에서 한달 이상 안정하게 분산이 유지되며 저점도 유화 제형에 5 wt% 이상 균질 유화기로 용이하게 분산이 가능하였다. 이렇게 제조된 경옥 파우더가 2% 함유된 제형을 피부에 도포하고 피부의 표면 온도변화를 적외선 열 영상 분석기로 측정한 결과 동일인의 안면 피부에 경옥 파우더가 함유된 O/W 유화제형을 도포한 부위가 30 min 경과 시 대조군을 도포한 부위의 온도 대비 평균 약 $+1.5^{\circ}C$, 최대 $+2^{\circ}C$의 온도차이를 나타내는 것을 확인하였다. 이와 같은 현상의 원인을 보다 분명하게 확인하기 위하여 경옥 파우더 자체를 가온한 뒤 복사에 의한 열 방출을 살펴보았고, 전파장대에서의 흡광 분석, 원적외선 방사율 및 표면 원소 분석을 진행한 결과, 이와 같은 피부 온도 변화는 경옥 파우더의 원적외선 방사 효과에 의존하는 것이 아니라 경옥 파우더의 표면에 노출된 원소들과 스킨케어용 화장품에 높은 비율로 포함되어 있는 물 분자와의 수소결합으로 인해 수분 증발을 억제하여 열에너지의 손실을 막기 때문인 것으로 확인되었다. 결론적으로 경옥 파우더는 화장품용 새로운 보습, 보온 소재로서 활용이 가능하며, 흡광 분석결과로 미루어 보아 이산화티탄과 같은 무기 자외선 차단제와 간단히 혼합 병용하여 자외선 및 유해 가시광선 영역의 차단을 증대시키는 보조 소재로도 유용할 것이다.

• Korean Chemical Engineering Research
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• 제43권3호
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• pp.401-406
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• 2005

본 연구에서는 다중벽 탄소나노튜브의 화학적 표면처리가 에폭시 매트릭스 복합재료의 유리전이온도, 열안정성 그리고 동적 점탄성거동에 미치는 영향을 고찰하기 위하여 시차주사열량계(DSC), 열중량분석기(TGA) 그리고 동적 기계적 분석기(DMA)를 통하여 각각 측정하였다. 탄소나노튜브의 표면처리는 35 wt％의 $H_3PO_4$(A-MWNTs) 혹은 35 wt％ KOH(B-MWNTs) 용액으로 화학적 표면처리를 하였으며, 표면처리 후 표면특성 변화는 pH, 표면 산 및 염기도, 적외선 분광법(FT-IR)과 자외선 광전자 스펙트럼(XPS) 분석을 통하여 알아보았다. 그 결과로서, 산-염기 상호반응에 의한 각각의 표면처리는 탄소나노튜브의 표면특성 및 화학적 조성 변화를 가져오며, 산처리한 MWNTs/에폭시 복합재료의 경우가 염기처리 및 미처리 시편과 비교하여 열안정성 및 동적 점탄성 특성에 있어서 탄소나노튜브 표면에 도입된 산성 관능기 그룹의 영향으로 큰 값을 나타내었다. 이는 염기성을 가지는 에폭시 수지와 산성을 가지는 탄소나노튜브와의 산-염기 및 수소결합에 의한 계면결합력의 향상 때문이라 생각된다.

• Journal of Electrochemical Science and Technology
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• 제9권4호
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.