• Title/Summary/Keyword: Hydrofluoric Acid

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Chemical-assisted Ultrasonic Machining of Glass by Using HF Substitute Solution (불산대체용액을 이용한 유리의 초음파 가공)

  • 전성건;남권선;김병희;김헌영;전병희
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.262-267
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    • 2004
  • Ultrasonic machining has been known as one of the conventional machining methods in the glass fabrication processes. In ultrasonic machining, typically, glass is removed by the impulse energy of the abrasive generated by the ultrasonic power. However, when the machining feature decrease under hundreds of micrometers, as conventional ultrasonic machining uses only the impulse energy of the abrasive, the speed of ultrasonic machining decreases significantly and the surface roughness becomes deteriorated. To overcome this size effect, the chemicals which can erode glasses, such as HF, XF, etc, are added to the slurry. The chemical-assisted ultrasonic machining method, so called, is another alternating effective way for micro machining of glasses. In previous work, we used the hydrofluoric acid (HF) as an additive chemical. But, as the HF solution is too poisonous to be used as a ultrasonic process additive, it is needed to be substituted by other safe chemicals. As results of the machinability comparison of several chemicals, the GST-500F was selected to replace the HF. The GST-500F (pH $4.0{\pm}1.0$) is non-volatile, odorless. During experimental works, it was shown that the machining rate increases 1.5 times faster than the conventional ultrasonic machining. The machining load also decreases. However, the enlargement of the hole diameter and significant tool wear are still the problems to be solved.

Structuring of Bulk Silicon Particles for Lithium-Ion Battery Applications

  • Bang, Byoung-Man;Kim, Hyun-Jung;Park, Soo-Jin
    • Journal of Electrochemical Science and Technology
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    • v.2 no.3
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    • pp.157-162
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    • 2011
  • We report a simple route for synthesizing multi-dimensional structured silicon anode materials from commercially available bulk silicon powders via metal-assisted chemical etching process. In the first step, silver catalyst was deposited onto the surface of bulk silicon via a galvanic displacement reaction. Next, the silver-decorated silicon particles were chemically etched in a mixture of hydrofluoric acid and hydrogen peroxide to make multi-dimensional silicon consisting of one-dimensional silicon nanowires and micro-scale silicon cores. As-synthesized silicon particles were coated with a carbon via thermal decomposition of acetylene gas. The carbon-coated multi-dimensional silicon anodes exhibited excellent electrochemical properties, including a high specific capacity (1800 mAh/g), a stable cycling retention (cycling retention of 89% after 20 cycles), and a high rate capability (71% at 3 C rate, compared to 0.1 C rate). This process is a simple and mass-productive (yield of 40-50%), thus opens up an effective route to make a high-performance silicon anode materials for lithiumion batteries.

Fabrication and Characteristics of Porous Silicon (다공성 실리콘의 제조 및 특성에 관한 연구)

  • 이철환;조원일;백지흠;박성용;안춘호;유종훈;조병원;윤경석
    • Journal of the Korean institute of surface engineering
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    • v.28 no.3
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    • pp.182-191
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    • 1995
  • A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

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Electrodeposition of Copper on AZ91 Mg Alloy in Cyanide Solution

  • Nguyen, Van Phuong;Park, Min-Sik;Yim, Chang Dong;You, Bong Sun;Moon, Sungmo
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.238-244
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    • 2016
  • Copper electrodeposition on AZ91 Mg alloy was studied in views of preferential deposition on ${\alpha}$- or ${\beta}$- phases and how to achieve uniform deposition over the entire surface on ${\alpha}$- and ${\beta}$-phases in a cyanide solution. The inhomogeneous microstructure of AZ91 Mg alloy, particularly ${\alpha}$- and ${\beta}$-phases, was found to result in non-uniform deposition of zincate layer, preferential deposition of zincate on ${\beta}$-phases, which leads to non-uniform growth of copper layer during the following electrodeposition process. The preferential depositions of zincate can be attributed to higher cathodic polarizations on the ${\beta}$-phases. Pin-hole defects in the copper electrodeposit were observed at the center of large size ${\beta}$-phase particles which is ascribed to gas bubbles formed at the ${\beta}$-phases. The activation of AZ91 Mg alloy in hydrofluoric acid solution was used to obtain uniform growth of zincate layer on both the ${\alpha}$- and ${\beta}$-phases. By choosing an optimum activation time, a uniform zincate layer was obtained on the AZ91 Mg alloy surface and thereby uniform growth of copper was obtained in a cyanide copper electroplating solution.

Optimization of Porous Silicon Reflectance for Multicrystalline Silicon Solar Cells (다공성 실리콘 반사방지막의 최적 반사율을 적용한 다결정 실리콘 태양전지)

  • Kwon, J.H.;Kim, D.S.;Lee, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.146-149
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    • 2004
  • Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

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Effect of Chemically Etched Surface Microstructure on Tribological Behaviors

  • Hye-Min Kwon;Sung-Jun Lee;Chang-Lae Kim
    • Tribology and Lubricants
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    • v.40 no.3
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    • pp.84-90
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    • 2024
  • This study investigates the effect of the surface microstructure on the tribological characteristics of glass substrates. Chemical etching using hydrofluoric acid and ammonium hydrogen fluoride was employed to create controlled asperity structures on glass surfaces. By varying the etching time from 10 to 50 min, different surface morphologies were obtained and characterized using optical microscopy, surface roughness measurements, and water contact angle analysis. Friction tests were performed using a stainless steel ball as the counter surface to evaluate the tribological behavior of the etched specimens. The results showed that the specimen etched for 20 min exhibited the lowest and most stable friction coefficient, which was attributed to the formation of a uniform and dense asperity structure that effectively reduced the stress concentration and wear at the contact interface. In contrast, specimens etched for shorter (10 min) or longer (30-50 min) durations displayed higher friction coefficients and accelerated wear owing to nonuniform asperity structures that led to local stress concentration. Optical microscopy of the wear tracks further confirmed the superior wear resistance of the 20-minute etched specimen. These findings highlight the importance of optimizing the etching process parameters to achieve the desired surface morphology for enhanced tribological performance, suggesting the potential of chemical etching as a surface modification technique for various materials in tribological applications.

Study on Recovery of Separated Hydrofluoric Acid, Nitric Acid and Acetic Acid Respectively from Mixed Waste Acid Produced during Semiconductor Wafer Process (반도체 웨이퍼 제조공정(製造工程) 중 발생혼합폐산(發生混合廢酸)으로부터 불산, 질산 및 초산의 각 산 회수(回收)에 관한 연구(硏究))

  • Kim, Ju-Yup;Kim, Hyun-Sang;Bae, Woo-Keun
    • Resources Recycling
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    • v.18 no.4
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    • pp.62-69
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    • 2009
  • We researched separation of mixed waste acids with HF, $CH_3COOH$, $HNO_3$ that were produced during a semiconductor wafer process to recycle these acids. At first, we manufactured the fluoride compound in form of $Na_2SiF_6$ by precipitating HF using $NaNO_3$ and Si powder. The concentration of HF was reduced from the initial concentration of 127 g/L to 0.5 g/L with an HF recovery ratio of 99.5%. After the manufacture of $Na_2SiF_6$, the concentration of $HNO_3$ and $CH_3COOH$ demonstrated 502 g/L and 117 g/L respectively. Following these findings we added NaOH in this $CH_3COOH/HNO_3$ mixed acid in order to obtain pH=4. Next we separated the $CH_3COOH$ and recoverd it through the use of vaccum evaporation at -440 mmHg, $95^{\circ}C$. The concentration of the recovered $CH_3COOH$ was approximately 15% and the recovery ratio of $CH_3COOH$ was over 85%. We precipitated the $NaNO_3$ by cooling the concentrated solution to $20^{\circ}C$ with a $HNO_3$ recovery ratio of over 93%. We confirmed that only $Na_2SiF_6$ and $NaNO_3$ were manufactured by XRD analysis after drying these precipitants at $90^{\circ}C$. The precipitants demonstrated a purity of approximately 97% and 98% respectively. Therefore, the purity of the precipitants proved to be similar to that of commercial products.

SURFACE HARDNESS AND PRESSING ACCURACY OF REUSED IPS EMPRESS 2 (반복 사용된 IPS Empress 2의 표면경도와 pressing accuracy에 관한 연구)

  • Son Oe-Soo;Kim Yu-Lee;Lee Kyung-Ja;Jin Tai-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.41 no.5
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    • pp.596-605
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    • 2003
  • Statement of problem : IPS Empress2 system was developed and used in prosthodontic treatment, but the cost of ingot is expensive for wide application. Purpose : This study was to investigate the possibility on recycling of IPS Empress 2 ceramic for wide application of IPS Empress 2 ceramic in prosthodontic treatment. Material and Method : 1st, 2nd and 3rd pressed disc-shaped($10{\times}1.5mm$) IPS Empress 2 specimens were made with IPS Empress ingot(200, Ivoclar, Liechtenstein) and pressing furnace(IPS Empress EP 500, Ivoclar, Liechtenstein). Vicker's surface hardness and fracture toughness, acid resistance, and pressing accuracy of IPS Empress 2 ceramic were measured and analyzed. Surface hardness was measured by microhardness tester(MTX 70. Matsuzawa, Japan), before and after surface treatment with 0.5% hydrofluoric acid and carbonic acid(Coca cola) for evaluation of acid resistance. Results : The surface hardness of 1st pressed specimen was the higher(5.11 GPa) than those of 2nd pressed(4.89 GPa) and 3rd pressed specimen(4.86 GPa), and the fracture toughness of 1st pressed ($1.58MPam^{1/2}$) and 2nd pressed specimen($1.51MPam^{1/2}$) were higher than that of 3rd pressed specimen($1.39MPam^{1/2}$). The changes of surface hardness of 1st, 2nd, and 3rd pressed specimens after treatment with fluoric acid were 0.17, 0.06, 0.05 (GPa) respectively, and those of 1st, 2nd, and 3rd pressed specimens after treatment with carbonic acid were 0.07, 0.00, 0.05(MPa) respectively. The pressing accuracy of 1st,2nd and 3rd specimen were 77.22%, 85.681%, and 75.05%. The pressing accuracy of 2nd pressed specimen was higher than that of the 3rd specimen. Conclusion : The changes of physical properties according to recycling of IPS Empress 2 from this study were insignificant. Therefore the possibility of recycling of IPS Empress 2 can be suggested from the results.

The effect of silane applied to glass ceramics on surface structure and bonding strength at different temperatures

  • Yavuz, Tevfik;Eraslan, Oguz
    • The Journal of Advanced Prosthodontics
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    • v.8 no.2
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    • pp.75-84
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    • 2016
  • PURPOSE. To evaluate the effect of various surface treatments on the surface structure and shear bond strength (SBS) of different ceramics. MATERIALS AND METHODS. 288 specimens (lithium-disilicate, leucite-reinforced, and glass infiltrated zirconia) were first divided into two groups according to the resin cement used, and were later divided into four groups according to the given surface treatments: G1 (hydrofluoric acid (HF)+silane), G2 (silane alone-no heat-treatment), G3 (silane alone-then dried with $60^{\circ}C$ heat-treatment), and G4 (silane alonethen dried with $100^{\circ}C$ heat-treatment). Two different adhesive luting systems were applied onto the ceramic discs in all groups. SBS (in MPa) was calculated from the failure load per bonded area (in $N/mm^2$). Subsequently, one specimen from each group was prepared for SEM evaluation of the separated-resin-ceramic interface. RESULTS. SBS values of G1 were significantly higher than those of the other groups in the lithium disilicate ceramic and leucite reinforced ceramic, and the SBS values of G4 and G1 were significantly higher than those of G2 and G3 in glass infiltrated zirconia. The three-way ANOVA revealed that the SBS values were significantly affected by the type of resin cement (P<.001). FIN ceramics had the highest rate of cohesive failure on the ceramic surfaces than other ceramic groups. AFM images showed that the surface treatment groups exhibited similar topographies, except the group treated with HF. CONCLUSION. The heat treatment was not sufficient to achieve high SBS values as compared with HF acid etching. The surface topography of ceramics was affected by surface treatments.

Non-HF Type Etching Solution for Slimming of Flat Panel Display Glass (평판디스플레이용 유리의 박판화공정을 위한 비불산형 식각액)

  • Lee, Chul-Tae
    • Applied Chemistry for Engineering
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    • v.27 no.1
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    • pp.101-109
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    • 2016
  • The purpose of this research was to develop a flat panel display device's glass etchant which can replace hydrofluoric acid. The glass etchant was composed of 18~19% wt% of ammonium hydrogen fluoride, 24~25 wt% of sulfuric acid, 45~46 wt% of water, 4~5 wt% of sulfate and 7~8 wt% of fluoro-silicate. By replenishing the etchant which has the amount of 5% of initial solution's mass, it was possible to reuse the etchant continuously. The developed etchant showed $5{\mu}m/min$ of etching rate at $30^{\circ}C$. The reusable etchant, with replenishing 5% of initial etchant mass showed the stable etching rate, which has the deviation of less than $0.1{\mu}m/min$ etching rate. The glass surface of flat panel display device created from our etching process was in good condition with any defects such as pin hole and dimple.