• 제목/요약/키워드: Hybrid films

검색결과 386건 처리시간 0.046초

콜로이드 실리카를 이용한 UV 경화형 친수성 코팅 도막 제조 (Preparation of UV-Curable Hydrophilic Coating Films Using Colloidal Silica)

  • 양준호;송기창
    • Korean Chemical Engineering Research
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    • 제55권6호
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    • pp.754-761
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    • 2017
  • 알코올에 분산된 콜로이드 실리카를 아크릴 단량체인 pentaerythritol triacrylate (PETA)와 혼합시킴에 의해 UV 경화형 친수성 코팅 용액을 제조하였다. 또한 이 친수성 코팅 용액을 PC 기재 위에 스핀코팅 시킨 후 10 min 동안 UV 경화시킴에 의해 친수성 코팅 도막이 제조되었다. 이 과정 중 코팅 용액 중의 콜로이드 실리카 양을 10~50 g으로 변화시켜 코팅 도막의 친수성에 미치는 영향을 살펴보았다. 그 결과 코팅 용액 중의 콜로이드 실리카 양은 코팅 도막의 친수성에 큰 영향을 미치며, 콜로이드 실리카 양이 30 g인 경우에 $37^{\circ}$의 가장 낮은 접촉각과 H의 우수한 연필경도를 나타내었다.

Ru/$RuO_2$ 금속/산화물 이중전극 위에 증착한 PZT 박막의 전기적 특성 (Electrical Properties of PZT Thin Films Deposited on the Ru/$RuO_2$ Metal/Oxide Hybrid Electrodes)

  • 정규원;박영;송준태
    • 한국전기전자재료학회논문지
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    • 제14권4호
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    • pp.281-288
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    • 2001
  • PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

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Development of Highly Conductive and Corrosion-Resistant Cr-Diamond-like Carbon Films

  • Ko, Minjung;Jun, Yee Sle;Lee, Na Rae;Kang, Suhee;Moon, Kyoung Il;Lee, Caroline Sunyong
    • 한국세라믹학회지
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    • 제56권3호
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    • pp.317-324
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    • 2019
  • Cr-diamond-like carbon (Cr-DLC) films were deposited using a hybrid method involving both physical vapor deposition and plasma-enhanced chemical vapor deposition. DLC sputtering was carried out using argon and acetylene gases. With an increase in the DC power, the Cr content increased from 14.7 to 29.7 at%. The Cr-C bond appeared when the Cr content was 17.6 at% or more. At a Cr content of 17.6 at%, the films showed an electrical conductivity of > 363 S/cm. The current density was 9.12 × 10-2 ㎂/㎠, and the corrosion potential was 0.240 V. Therefore, a Cr content of 17.6 at% was found to be optimum for the deposition of the Cr-DLC thin films. The Cr-DLC thin films developed in this study showed high conductivity and corrosion resistance, and hence, are suitable for applications in separators.

Ru/RuO$_2$ 이중 전극위에 성장한 PZT 박막의 특성에 관한 연구 (The study of the properties of PZT thin films deposited on Ru/RuO$_2$ electrode)

  • 최장현;강현일;박영;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.394-397
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    • 2001
  • In this paper, in-situ deposited Ru/RuO$_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and RuO$_2$ bottom electrodes are also investigated. The use of Ru/RuO$_2$ hybrid electrodes showed better electrical properties in compression with RuO$_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/RuO$_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of 7.2 C/$\textrm{cm}^2$ and 46.35 kV/cm, respectively.

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DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향 (Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering)

  • 오성훈;강세원;이건환;정우석;송풍근
    • 한국표면공학회지
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    • 제45권3호
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    • pp.117-122
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    • 2012
  • ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and $SnO_2$ (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO ($Ga_2O_3$:5.57 wt%) target. These films were post-annealed at temperature of 200, $300^{\circ}C$ in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.