• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1538-1541
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• 2009

Amphiphobic thin films for touched panel application was prepared by $SiO_2$ nanoparticles self-assembled nanostructure. Silicon dioxide nano spheres were prepared by sol-gel method and well dispersed in a solution with surfacants of low surface energy. Nanostrcture thin films were obtained by spin coating technologies.

• 한국세라믹학회지
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• 제50권1호
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• pp.63-69
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• 2013

Negative-temperature coefficient (NTC) thermistors based on nickel manganite spinel ($NiMn_2O_4$) are widely used for many applications, such as sensors and temperature compensators, due to their good thermistor characteristics and stabilities. However, to achieve thermistors with a high NTC B constant, which is an important figure of merit pertaining to the degree of temperature sensitivity, the activation energy should be high such that high resistivity at ambient temperatures results. To obtain a high B constant and low resistivity, Al and Si modified spinel structured $Ni_{0.6}Si_{0.2}Al_{0.6}Mn_{1.6}O_4$ hybrid thick films with the conducting metal oxide of $LaNiO_3$ were fabricated on a glass substrate by aerosol deposition at room temperature (RT). The NTC-$LaNiO_3$ hybrid thick films showed resistivity as low as < $100k{\Omega}\;cm$ at $90^{\circ}C$, which is one or two orders of magnitude lower than that of the monolithic NTC films, while retaining a high B constant of $NiMn_2O_4$ of over 5500 K when 20 wt% $LaNiO_3$ was added without a post-thermal treatment. These phenomena are explained by the percolation threshold mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.313-313
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• 2016

Transparent conductive oxide (TCO) films have many disadvantages, such as rarity, possible exhaustion, process temperature limitations, and brittleness on a flexible substrate. In particular, as display technology moves toward flexible displays, TCO will become completely unsuitable due to its brittleness. To address theses issue, many researchers have been studying TCO substitutes. In recent efforts, metal nanowires, conducting polymers, carbon nanotube networks, graphene films, hybrid thin films, and metal meshes/grids have been evaluated as candidates to replace TCO electrodes. In this study, we fabricated the TCO film with Ag meshes shape using polystyrene (PS) beads monolayer on the substrate. The PS beads were used as a template to create the mesh pattern. We fabricated the monolayer on the flexible substrate (PES) with the well-aligned PS beads. Electrodes with Ag mesh shape were formed using this patterned monolayer. We could fabricated the Ag mesh electrode with the sheet resistance with $8ohm{\Omega}/{\Box}$.

• Bulletin of the Korean Chemical Society
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• 제22권12호
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• pp.1366-1370
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• 2001

Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.135-140
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• 2016

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

• 폴리머
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• 제35권1호
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• pp.7-12
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• 2011

PLGA는 미국 식품의약품안전청의 승인을 받은 합성고분자로서 생체재료로 널리 쓰이며, 실크피브로인은 세포친화성 및 우수한 기계적 특성으로 세포의 조직성장을 지지한다. 본 연구에서는 PLGA/실크피브로인 0, 10, 20, 40 및 80 wt% 하이브리드 필름을 제조하였고 함량별 슈반세포의 최적환경을 설정하고자 하였다. DSC결과 PLGA/실크피브로인 필름이 in vivo 적용시 열적으로 안정할 것으로 사료되었다. 접촉각 측정을 통해 PLGA/실크피브로인 10 및 20 wt% 필름이 세포 분화 및 증식에 적합할 것으로 사료되며 RT-PCR과 SEM 결과로부터 PLGA에 10 및 20 wt%의 실크피브로인을 함유한 필름에서 슈반세포의 우수한 부착거동 및 형태유지를 확인하였다. 또한 WST 결과 10 wt% 실크피브로인 함량에서 높은 증식률이 확인되었다. 결과적으로 PLGA/실크피브로인 10 및 20 wt% 필름이 세포에 알맞은 상호관계를 제공해 긍정적으로 작용함을 확인하였다.

• Composites Research
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• 제37권3호
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• pp.170-178
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• 2024

본 연구에서는 탄소섬유 강화 플라스틱(CFRP)에 얇은 구리 필름(Cu film)이 배치된 hybrid composite이 제안되었으며, 두께방향 열전도도가 최대가 될 수 있는 Cu film 배치조합을 도출하는데 양자 어닐링(Quantum Annealing)이 적용되었다. CFRP의 각 ply와 Cu film간의 상관관계 분석이 유한요소 해석을 통해 수행되었으며, 수행된 결과를 바탕으로 조합 최적화 문제가 정의되었다. 정의된 문제를 양자 어닐링에 임베딩하기 위한 공식화 과정이 진행되었으며 이를 통해 CFRP의 각 ply에 투입될 수 있는 Cu film 수량에 관한 목적함수와 제약조건이 수식으로 구현되었다. 공식화된 수식은 D-Wave 양자 어닐러에 임베딩되기 위해 Ocean SDK(software development kit)와 Leap을 통해 프로그래밍 되었으며, 양자 어닐링 과정을 통해 두께 방향 열전도도가 최대를 만족하는 최적의 Cu film 배치 조합이 도출되었다. 도출된 배치 조합은 투입될 수 있는 Cu film의 수량이 적어질수록 단순한 배치 형태를 나타내었으며, 수량이 많아질수록 세밀한 배치를 보였다. Cu film의 배치 수량에 따라 생성된 최적 조합들은 두께 방향으로의 고유 열전도 경로를 나타내었으며, Cu film의 횡방향 배치 자유도가 두께 방향 열전도도 결과에 민감하게 나타날 수 있음을 보였다.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1083-1089
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• 2008

We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.