• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.142-147
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• 2022

After introducing Hybrid Bonding technology into image sensors using stacked sensors and image processors, large quantity production became possible. As a result, it is currently used in most of the CMOS image market in smartphones and other image-based devices worldwide, and almost all stacked CIS manufacturing sites have focused on miniaturization using hybrid bonding. In this study, an upper wafer handling module for Wafer to Wafer Hybrid Bonding developed to increase the alignment and precision between wafers when wafer bonding. The module was divided two parts to reduce error of both the alignment and degree of precision during wafer bonding. Wafer handling module developed both new Tip/Tilt system controlling θx,θy of upper wafer and striker to push upper wafer. Based on this, it was confirmed through the stability evaluation that the upper wafer handling module can be controlled without any problem during W2W hybrid bonding.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• 대한소아치과학회지
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• 제30권2호
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• pp.263-271
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• 2003

본 연구는 All-In-One system의 적용 시간과 도포횟수에 따라 유치 상아질과 복합레진의 접착 강도와 혼성층에 어떤 영향을 미치는지를 규명하고자 Single bonding agent(Scotchbond Multi-Purpose Plus, 3M, USA)와 All-In-One system(Prompt-L pop, 3M ESPE, USA)를 사용하였고 수복용 레진으로 복합레진(Z-250, 3M, USA)를 사용한 결과 다음과 같은 결과를 얻을 수 있었다. 1. 전단 결합 강도는 Single bonding agent를 적용한 경우 All-In-One system을 적용한 군보다 유의하게 높게 나타났다(P<0.05). 2. Prompt L-pop을 2회, 3회 적용한 경우에 전단 결합 강도는 1회 적용한 군보다 유의하게 높게 나타났으며(P<0.05), 혼성층의 두께는 1회 적용군보다 2회, 3회 적용한 군에서 증가하였다. 3. Prompt L-pop을 15초 적용한 경우에 전단 결합 강도는 7초 적용한 군보다 유의하게 높게 나타났으며(P<0.05), 30초 적용군과는 차이가 없었다. 혼성층의 두께는 7초 적용군이 가장 얇고, 15초군과 30초군에서는 차이가 없었다. 4. Single bonding agent를 이용한 경우 두터운 $2-4{\mu}m$의 혼성층이 관찰된 반면, All-In-One bonding system(Prompt L-pop, 3M ESPE, USA)에서는 비교적 얇은 혼성층($1-2{\mu}m$)이 형성되었다.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 추계학술발표대회 논문집
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• pp.57-60
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• 2005

Composite-to-aluminum joins were tested to get failure loads and modes for three types of joins; adhesive bonding, bolt fastening, and adhesive-bolt hybrid joining. Film type adhesive FM73 and paste type adhesive Cytec EA9394S were used for aluminum and composite bonding to make a double-lap joint. A digital microscope camcorder was used to monitor the failure initiation and propagation. It was found that the hybrid joining is an effective method to strengthen the joint when the mechanical fastening is stronger than the bonding as in the case of using the paste type adhesive. On the contrary, when the strength of the bolted joint is lower than the strength of the bonded joint as in the joint with the film type adhesive, the bolt joining contribute little to the hybrid joint strength.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.663-664
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• 2010

• Journal of Welding and Joining
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• 제29권6호
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• pp.49-55
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• 2011

With the development of pre-painted steel sheets for automotive body application, a new joining method is required such as hybrid joining with combination of adhesive bonding and mechanical joining. The objective of this study is to investigate the effect of pre- and post-baking of adhesive bonding on failure mode and strength of hybrid joining of automotive steel sheets. Experiments show that the hybrid joining exhibits better bonding strength and displacement than conventional adhesive joining and mechanical fastening each. Comparison of pre- and post-baked hybrid joining results suggested that baking at $160^{\circ}C$ after mechanical joining was found to have higher joining properties than pre-baking condition. The prebaking condition changed its fracture mode from interfacial to button fracture. The changes in fracture mode with post-baking of hybrid joining was attributed to variation in neck thickness and undercut of joint.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.119-124
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• 2021

In a situation where Moore's law, which states that the performance of semiconductor integrated circuits doubles every two years, is showing a limit from a certain point, and it is difficult to increase the performance due to the limitations of exposure technology.In this study, a wafer hybrid method that can increase the degree of integration Various research on bonding technology is currently in progress. In this study, in order to achieve rotational precision between wafers in wafer hybrid bonding technology, modeling of θ_z alignment stage and VCM actuator modeling used for rotational alignment, magnetic field analysis and desgin, control, and evaluation are performed. The system of this study was controlled by VCM actuator, capactive sensor, and dspace, and the working range was ±7200 arcsec, and the in-position and resoultion were ±0.01 arcsec. The results of this study confirmed that safety and precise control are possible, and it is expected to be applied to the process to increase the integration.

• Restorative Dentistry and Endodontics
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• 제22권1호
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• pp.470-478
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• 1997

The purpose of this study was to investigate the effects of moistening mechods of dentin on the morphologic states of hybrid layers and on the interfacial bond strength between dentin and composite. Specimens were divided into 6 groups based on the surface moistening methods and materials used. After the dentin surface was conditioned with 10 % phoporic acid and irrigated: 1. The dentin surface was dried. Then bonding agent and composite were applied. 2. The dentin surface was blot-dryed. Then primer, bonding atent and composite were applied. 3. The dentin surface was dryed first. Within 20 seconds, the surface was rewetted, then primer, bonding agent and composite were applied. 4. The dentin surface was dryed. Then primer, bonding agnent and composite were applied. 5. The dentin surface was dryed first. Atter 24hrs, the surface was rewetted, and then primer, bonding agent and composite were applied. 6. The surface was conditioned with NaOCl for 5min. Then primer, bonding agent and composite were applied. To reveal the hybrid layer, scanning electron microscopy was used after the samples were ion beam etched. The shear bond strength of each group was tom pared by ANOVA. In groups 2, 3 and 4, the hybrid layer was clearly visible, but the width was more limited in group 4. In group 1 and 5, the hybrid layer was not found, and a gap was formed between dentin and composite. In group 6, the hybrid layer was not found, but the interface between the dentin and composite was intimate. The shear bond strength of each group was as follows: Group 1 : 4MPa, Group 2 : 14MPa, Group 3 : 12MPa, Group 4 : 14MPa, Group 5 : 5MPa, Group 6 : 9MPa.