• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.55-55
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.43.2-43.2
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.779-782
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• 2003

Hot filament 플라즈마 화학기상 증착법 (HFPECVD)를 사용하여 전처리 조건에 따른 탄소나노튜브의 성장 특성을 관찰하였다. 암모니아 ($NH_3$)를 희석가스로 사용하였고, 아세틸렌 ($C_2H_2$)를 탄소 원료가스로 각각 사용하였다. 암모니아 가스 플라즈마를 사용하여 전처리 된 니켈 촉매 층의 SEM (Scanning Electron Microscopy) 이미지를 관찰하여 본 결과, 나노 사이즈의 촉매 그레인(grain)을 발견할 수 있었다. 그리고 탄소 나노튜브의 직경과 성장 밀도 또한 전처리 된 촉매 층에 따라 다른 양상을 보였다. TEM (Transmission Electron Microscopy)를 사용하여 탄소나노튜브를 관찰한 결과 공동구조(hollow)를 한 다중벽 탄소 나노튜브(MWCNT)를 관찰할 수 있었다. 성장된 나노튜브는 끝에 금속팁을 가지고 있으며, 나노튜브의 팁은 촉매로 사용한 것과 같은 물질로 구성되어 있었다. Raman spectroscopy를 사용하여 측정된 B-밴드와 G-밴드의 피크들은 각각 $1360cm^{-1}$와 $1598cm^{-1}$ 부근에서 나타났으며, 전처리 조건을 달리하여 성장시킨 탄소나노튜브 필름에서 이들 두 피크의 위치는 이동하지 않았고, 두 피크의 강도 비율 ($I_G/I_D$)은 전처리 조건에 따라 변하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.293-293
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• 2010

Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.55-60
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• 2000

Vertically aligned carbon nanotubes on nickel coated glass substrates were obtained at low temperatures below 600$\^{C}$ by plasma enhanced hot filament chemical vapor deposition where acetylene gas was used as the carbon source and ammonia gas was used as the dilution gas and catalyst. The diameters of the nanotubes decreased from 96 m to 41 m as NH$_3$/C$_2$H$_2$ ratio increased from 2:1 to 5:1. Total flow rate of input gases with constant NH$_3$/C$_2$H$_2$ ratio did not change the diameter of carbon nanotubes. No growth of the carbon nanotubes was observed with only C$_2$H$_2$ nor N$_2$ instead of NH$_2$. G line and D line in Raman spectra were observed, which implies that there were many structural defects in carbon nanotubes.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• Textile Coloration and Finishing
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• v.10 no.3
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• pp.10-19
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• 1998

This paper investigates the change of mechanical properties and thermal shrinkage in commercial multi-filament PET(polyethylene terephthalate) , namely, regular yarn, POY, DTY and composite yarn. To determine changing the effects of processing steps, these were examined at three steps process simulation conditions. The first step is sizing simulation$(S-1\;step\;:\;130^\circ{C}\times2\;min$., hot air treatment under 0.1 gf/d load), the second step is scouring simulation$(S-2\;step\;:\;100^\circ{C}\times20\;min$., boiling water treatment under free tension)and final step is setting simulation$(S-3\;step\;:\;180^\circ{C}\times2\;min$., hot air treatment under free tension). Regular yarn in multi-step treatment showed higher shrinkage at S-3 step and DTY showed higher in at S-1 step. While POY was relaxed at S-1 step, composite yarn showed different shrinkage properties depending on composite yarn type. Mechanical properties showed good relationship with shrinkage : high shrinkage makes initial modulus decrease and bleating strain increase. It also makes decreasing yield strain and yield stress decrease.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.151-152
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• 2007

탄소나노튜브(CNTs)는 우수한 물리적, 화학적, 기계적 특성으로 다양한 분야에서 연구가 진행 되고있다. 특히, field emission displays (FEDs)로의 응용을 위해서는 기본적으로 sodalime glass 위에 직접 CNTs를 성장시켜야 하며, 소자 응용을 위해 기판인 sodalime glass를 왜곡시키는 온도보다 낮은 온도에서 CNT의 수직 성장이 이루어져야 한다. 본 연구에서는 Hot-filament plasma enhanced chemical vapor deposition (HF-PECVD)를 이용하여 합성온도를 400, 450, 500, $550^{\circ}C$로 변화시켰으며 촉매 층인 Ni의 두께를 5~40 nm까지 조절하여 탄소나노튜브를 합성하였다. 저온에서 합성된 탄소나노튜브는 FE-SEM을 이용하여 성장 형태 및 표면 특성을 확인하였으며, 미세구조는 HR-TEM을 이용하여 확인하였다.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.20-24
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• 2020

Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH₄/H₂ gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm²) size single crystal diamond substrate (100), the CH₄/H₂ gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.