• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of Pharmaceutical Investigation
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• v.35 no.1
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• pp.33-38
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• 2005

Recently increasing attention has been focused on solid lipid nanoparticles (SLN) as a parenteral drug carrier due to its numerous advantages that can come from both polymeric particle and fat emulsions, together with the possibility of controlled release and increasing drug stability. Lipophilic drugs such as paclitaxel, cyclosporin A, and all-trans retinoic acid have been successfully entrapped in SLN but the incorporation of hydrophilic drugs in SLN is very limited because of their very low affinity to the lipid. Therefore, as a new approach to improve the loading of hydrophilic drugs, a w/o/w emulsion technique has been developed. The primary objective of the current study was to improve the loading efficiency of a model hydrophilic drug, glycine (Log P = -3.44) into SLN. The proposed preparation process is as follows: A heated aqueous phase consisting of 0.1 ml of glycine solution in water (100 mg/ml), and poloxamer 188 (5 mg) were then added to a molten oil phase containing precirol (100 mg) and lecithin (5 mg). This mixture was dispersed by sonicator, leading to a w/o emulsion. A double emulsion (w/o/w) was formed after the addition of 2% poloxamer solution to the above dispersed system. After cooling the double emulsion, solid lipid nanosuspensions were successfully formed. The lipid nanoparticles had the mean particle size of 441.25 nm, and the average zeta potential of -20.98 mV. The drug loading efficiency was measured to be 8.54% and the drug loading amount was measured to be 0.92%. The w/o/w emulsion method showed an increased loading efficiency compared to conventional o/w emulsion method.

• Journal of Korean Society on Water Environment
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• v.36 no.2
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• pp.153-163
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• 2020

Magnetic separation technology is an efficient and environmentally friendly technology. Compared with the traditional wastewater treatment technology, the magnetic separation technology has its unique advantages and characteristics, and has been widely applied in the field of wastewater treatment. In particular, the emergence of superconducting magnetic separation technology makes possible for high application potential and value. In this paper, which through consulting with the literatures of Korea, Chinese, United States and other countries, the magnetic separation technology applied to wastewater treatment was mainly divided into direct application of magnetic field, flocculation, adsorption, catalysis and separation coupling technology. Advantages and limitations of the magnetic separation technology in sewage treatment and its future development were also studied. Currently, magnetic separation technology needs to be studied for additional improvement in processing mechanism, design optimization of magnetic carrier and magnetic separator, and overcoming engineering application lag. The selection, optimization and manufacturing of cheap magnetic beads, highly adsorbed and easily desorbed magnetic beads, specific magnetic beads, nanocomposite magnetic beads and the research of magnetic beads recovery technology will be hot application of the magnetic separation technology based on the magnetic carriers in wastewater treatment. In order to further reduce the investment and operation costs and to promote the application of engineering, it is necessary to strengthen the research and development of high field strength using inexpensive and energy-saving magnet materials, specifically through design and development of new high efficiency magnetic separators/filters, magnetic separators and superconducting magnetic separators.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.11-18
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• 2006

[ $Co_3O_4$ ] particles with non-aggregation characteristics were prepared by various conditions such as preparation temperature, flow rate of carrier gas, and concentration of spray solution using spray pyrolysis. The morphology and crystallinity of the preformed particles obtained by spray pyrolysis at various conditions affected the mean size and morphology of the post-treated $Co_3O_4$ particles. The preformed particles with hollow and porous morphology obtained from spray solution with citric acid and ethylene glycol turned to $Co_3O_4$ particles with nano size, regular morphology and non-aggregation characteristics after post-treatment at $800^{\circ}C$. On the other hand, the preformed particles obtained by the preparation conditions of short residence time of particles inside hot wall reactor and high reactor temperature turned to $Co_3O_4$ particles with aggregated morphology after post-treatment. The mean crystallite size and particle size of the $Co_3O_4$ particles prepared from optimum preparation conditions were 47 nm and 210 nm at post-treatment temperature of $800^{\circ}C$.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Journal of Korea Multimedia Society
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• v.25 no.8
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• pp.1167-1174
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• 2022

With the sustainable development and transformation of the city, public art as a business card of the famous city of culture has become a hot topic of research. The intervention of public art in public space not only brings users a sense of space experience, but also becomes a unique carrier of urban and rural image making. Although there is much research on the classification, aesthetics and function of public art, there is few quantitative research on user satisfaction. This paper takes the basic features of airport public art as a research object and the basic features of airport public art as the theoretical basis to study the impact of the basic characteristics of airport public art on user satisfaction. Research methods were based on questionnaire data of 247 people, in which models and hypotheses were tested using SPSS 21.0 software, based on the induction and extraction of nine influential factors in the basic characteristics of public art. The study found that public interpretation, media patterns, color perception, modeling form, place perception, city image and memory have significant positive effects on user satisfaction. The sharedness of public art, cognition and communication in public culture and spatial relations do not affect satisfaction. Conclusion, inspiration and prospect provide suggestions for designers and reference data and theoretical support for public art evaluation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.