• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.6 no.3
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• pp.302-314
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• 1994

The effects of the inclination of enclosure and partition on natural convective flow and heat transfer were investigated numerically. The enclosure was composed of the lower hot and the upper cold horizontal walls and the adiabatic vertical walls, and a partition was positioned perpendicularly at the mid-height of one vertical insulated wall. The governing equations are solved by using the finite element method with Galerkin method. The computations were performed with the variations of the partition length and Rayleigh number based on the temperature difference between two horizontal walls and the enclosure height with water(Pr=4.95). The effects of the inclination angle of enclosure and partition on the heat transfer within an enclosure were also studied. As the results, the increase of the inclination angle of enclosure rapidly raised the heat transfer rate, while the inclination angle for the maximum Nusselt number was retarded with the increase of the partition length and the decrease of the heat transfer rate became larger in proportion to the increase of the partition length. The Nusselt number obtained by the inclination of partition was smaller than that of the inclination of enclosure. However, the difference of the heat transfer rates was considerably decreased at the longer partition lengths and the trends for the variation of the average Nusselt number were more similar with that of the inclination of enclosure. The upward oriented partition increases the convective heat transfer distinctly in contrast to that of the inclination of enclosure as the partition length increases.

• Progress in Superconductivity
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• v.7 no.2
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Nuclear Engineering and Technology
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• v.18 no.3
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• pp.200-208
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• 1986

The loss of coolant accident based on a double-ended cold leg break is analyzed with the discharge coefficient (Ca) of 0.4. This analysis covers the whole transient period from the start of depressurization to the complete refilling of the core by using RELAP4/MOD6-EM and RELAP4/ MOD6-HOT CHANNEL for the system thermal-hydraulics and the fuel performance during the blowdown phase respectively, and RELAP4/MOD6-FLOOD and TOODEE2 during the reflood phase. A simple analytical method has been developed to account for the lower plenum filling by approximating steam-water countercurrent flows and superheated wall effects at the downcomer during the refill period. Based on the informations. at the time of EOB (end-of-bypass), the refill duration time and the initial reflooding temperature were estimated and compared with the results from the RELAP4/MOD6, resulting in a good agreement. In addition, some parametric studies on the EOB were performed. The form loss coefficient between upper head and upper downcomer was found to be sensitive to the occurrence of the spurious EOB. Appropriate form loss coefficients should be taken into account to avoid the flow oscillations at the downcomer. The analyses with the six and three volume core nodalizations, respectively, show much similar trends in the system thermal-hydraulic performance, but the former case is recommended to obtain good results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.155-162
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• 1997

Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of $350^{\circ}C$. The resistivity was increased to above $3{\times}10^{6}{\Omega}{\cdot}cm$ with copper doping and vapor oxidation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.5
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• pp.483-487
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• 2014

In this study, joining methods with SiC powder as the joining adhesives were studied in order to avoid the residual stresses coming from CTE (Coefficient of Thermal Expansion) mismatch between substrate and joining layer. The shear strength and microstructure of joined material between SiC substrates are investigated. The commercial Hexoloy-SA (Saint-Gobain Ceramics, USA) used in this work as substrate material. The fine ${\beta}$-SiC nano-powder which the average particle size is below 30 nm, $Al_2O_3$, $Y_2O_3$, and $SiO_2$ were used as joining adhesives. The specimens were joined with 20MPa and $1400-1900^{\circ}C$ by hot pressing in argon atmosphere. The shear test was performed to investigate the bonding strength. The cross-section of the joint was characterized by using an optical microscope and scanning electron microscopy (SEM).

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.6
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• pp.1584-1595
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• 1993

Many researches were carried out to estimate heat transfer rate on a circular cylinder in a uniform flow. Various empirical correlations were suggested in the past through expermental studies, however there are considerable discrepancies in the estimated values of heat transfer coefficient. Effects of variable properties of fluid on the heat transfer between a circular cylinder and the external uniform flow were numerically investigated in the present study. The flow and temperature fields were solved using a finite volume method for the uniform flow temperature of 200-900K and the wall temperature of 300-900K. The cold as well as the hot cylinders in the uniform flow of constant temperature were investigated. A unified correlation was obtained for the both cases.