• Title/Summary/Keyword: Hot Wall Method

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A Numerical Study on the Effect of PCB Structure Variation on the Electronic Equipment Cooling (PCB 구조변화가 전자장비 냉각에 미치는 영향에 관한 수치적 연구)

  • ;;Park, Kyoung-Woo
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.12
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    • pp.3329-3343
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    • 1995
  • The interaction of mixed convection and surface radiation in a printed circuit board(PCB) is investigated numerically. The electronic equipment is modeled by a two-dimensional channel with three hot blocks. In order to calculate the turbulent flow characteristics, the low Reynolds number k-.epsilon. model which is proposed by Launder and Sharma is applied. The S-4 approximation is used to solve the radiative transfer equation. The effects of the Reynolds number and geometric configuration variation of PCB on the flow and heat transfer characteristics are analyzed. As the results of this study, it is found that the thermal boundary layer occured at adiabatic wall in case with thermal radiation included, and the effect of radiation is also found to be insignificant for high Reynolds numbers. It is found, as well, that the heat transfer increases as the Reynolds number and block space increase and the channel height decreases and the heat transfer of vertical channel is greater than that of horizontal channel.

Process Development of Constant Curvature Extrusion for Aluminum Alloy (알루미늄 합금의 일정 곡률 압출공정 개발)

  • Joe, Y.J.;Lee, S.K.;Oh, K.H.;Park, S.W.;Kim, B.M.
    • Transactions of Materials Processing
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    • v.16 no.7
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    • pp.555-560
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    • 2007
  • This paper shows some achievements at bending of extruded aluminum profiles during the extrusion process. The conventional process for the production of bent profiles involves a successive extrusion, stretching, and bending of the profiles. Conventional bending methods can not meet demands far precision and cost-effective production in some cases, due to cross sectional deformation, irregular decrease of tube wall thickness and a complication of the process design. An estimation of spring-back required for precision of the bending radius can not always be achieved by the over bending of the profile. Since the profile is hot during the bending process, the spring-back phenomenon can be avoided. This means that an additional bending process is not necessary. Consequently, flexible bending can be achieved with cost reduction and quality improvement. Experimental tests were completed to study the relationship between curvature radius of profile and position of guide on the extrusion for vehicle bumper. A7108 is applied as a billet material in order to increase strength. The overall correlation between the experimental and numerical results is good. It is therefore concluded that the present method provides an efficient means for the constant curvature extrusion process.

An Analysis of Unsteady 2-D Heat Transfer of the Thermal Stratification Flow inside Horizontal Pipe with Electrical Heat Tracing (Heat Tracing이 있는 수평배관 내부 열성층 유동의 비정상 2차원 열전달 해석)

  • 정일석;송우영
    • Journal of Energy Engineering
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    • v.6 no.2
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    • pp.119-128
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    • 1997
  • A method to mitigate the thermal stratification flow of a horizontal pipe line is proposed by heating external bottom of the pipe with electrical heat tracing. Unsteady two dimensional model has been used to numerically investigate an effect of the external heating on the thermal stratification flow. The dimensionless governing equations are solved by using the control volume formulation and SIMPLE algorithm. Temperature distribution, streamline profile and Nusselt number distributions are analyzed under heating conditions. The numerical results of this study show that the maximum dimensionless temperature difference between hot and cold sections of the inner wall of pipe is 0.424 at dimensionless time of 1,500 and the thermal stratification phenomenon disappears at about dimensionless time of 9,000.

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Influence of spacing between buildings on wind characteristics above rural and suburban areas

  • Kozmar, Hrvoje
    • Wind and Structures
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    • v.11 no.5
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    • pp.413-426
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    • 2008
  • A wind tunnel study has been carried out to determine the influence of spacing between buildings on wind characteristics above rural and suburban type of terrain. Experiments were performed for two types of buildings, three-floor family houses and five-floor apartment buildings. The atmospheric boundary layer (ABL) models were generated by means of the Counihan method using a castellated barrier wall, vortex generators and a fetch of roughness elements. A hot wire anemometry system was applied for measurement of mean velocity and velocity fluctuations. The mean velocity profiles are in good agreement with the power law for exponent values from ${\alpha}=0.15$ to ${\alpha}=0.24$, which is acceptable for the representation of the rural and suburban ABL, respectively. Effects of the spacing density among buildings on wind characteristics range from the ground up to $0.6{\delta}$. As the spacing becomes smaller, the mean flow is slowed down, whilst, simultaneously, the turbulence intensity and absolute values of the Reynolds stress increase due to the increased friction between the surface and the air flow. This results in a higher ventilation efficiency as the increased retardation of horizontal flow simultaneously accompanies an intensified vertical transfer of momentum.

Growth and Characterization for $CdIn_2S_4/GaAs$ Epilayers ($CdIn_2S_4$ 에피레이어 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.239-242
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

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Numerical study of double diffusive convection due to lateral heating in a rotating annulus (회전하는 환형용기내의 옆면 가열에 의한 이중확산대류에 관한 수치해석)

  • Gang, Sin-Hyeong;Lee, Gyo-Seung;Lee, Jin-Ho
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.21 no.11
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    • pp.1422-1436
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    • 1997
  • Numerical investigations were conducted to study the convective phenomena of an initially stably stratified salt water solution with lateral heating in a uniformly rotating annulus. The method of investigation is the finite difference analysis of the basic conservation equation for an axisymmetric, unsteady, double-diffusive convection and calculation is made for R $a_{\eta}$=2*10$^{5}$ and Ta=10$^{7}$ ~ 2.5*10$^{8}$ . Formation of layered flow structure, merging process of layers, the corresponding temperature and concentration distributions, Nu variation with time are examined. Numerical results show that in each layer, the temperature profile looks 'S'-shaped and the concentration profile is uniform due to the convective mixing. At the interface between adjacent layers, the temperature changes smoothly but the concentration changes rapidly. As the effect of the rotation increases, the generation of rolls at hot wall, the formation and merging of layers are delayed. The average Nu shows the trend of conduction heat transferees the effect of the rotation increases.n increases.

Numerical Analyses to Simulate Thermal Stratification Phenomenon in a Piping System (배관계통에서의 열성층 현상 모사를 위한 수치해석)

  • Jeong, Jae-Uk;Kim, Sun-Hye;Chang, Yoon-Suk;Choi, Jae-Boong;Kim, Young-Jin;Kim, Jin-Su;Chung, Hae-Dong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.5
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    • pp.381-388
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    • 2009
  • In some portions of nuclear piping systems, stratification phenomena may occur due to the density difference between hot and cold stream. When the temperature difference is large, the stratified flow under diverse operating conditions can produce high thermal stress, which leads to unanticipated piping integrity issues. The objectives of this research are to examine controvertible numerical factors such as model size, grid resolution, turbulent parameters, governing equation, inflow direction and pipe wall. Parametric three-dimensional computational fluid dynamics analyses were carried out to quantify effects of these parameters on the accuracy of temperature profiles in a typical nuclear piping with complex geometries. Then, as a key finding, it was recommended to use optimized mesh of real piping with the conjugated heat transfer condition for accurate thermal stratification analyses.

Growth of ZnSe/ZnSe(bulk) Epilayer by HWE Method (HWE 방법에 의한 ZnSe/ZnSe(bulk) 박막 성장)

  • Shin, Yeong-Jin;Jeong, Tae-Soo;Shin, Hyun-Keel;Kim, Taek-Sung;Jeong, Cheol-Hoon;lee, Hoon;Shin, Yeong-Shin
    • Journal of the Korean Vacuum Society
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    • v.2 no.1
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    • pp.78-84
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    • 1993
  • Hot-Wall Epitaxy(HWE) 방법으로 ZnSe/ZnSe(bulk) 박막을 성장하였다. 이 때 사용되어진 ZnSe 기판은 승화법으로 증발부분의 온도를 $1160^{\circ}C$ 성장부분의 온도를 $1130^{\circ}C$로 하여 약 2주 동안 직경 20mm, 높이 18mm인 원추형의 ZnSe 단결정을 얻었다. 양질의 ZnSe 박막을 얻기 위한 조건은 증발부분의 온도는 $610^{\circ}C$, 기판의 온도는 49$0^{\circ}C$이었다. ZnSe(bulk) 기판위에 성장한 ZnSe 박막의 광발광에서는 강한 D-A pair emission과 Cu 불순물에 의한 녹색과 적색 발광이 관측되었고 SA 발광은 관측되지 않았다.

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Oscillatory Motion of Natural Convective Flow in Partially Divided Square Enclosure (수평격판을 갖는 4각형 밀폐공간내에서 자연대류의 진동유동)

  • 김점수;정인기;송동주
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.16 no.10
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    • pp.1963-1970
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    • 1992
  • An oscillatory motion of the natural convection in a two dimensional, partially divided square enclosure heated from below, and fitted with a partition is investigated numerically. The enclosure was composed of the lower hot and the upper cold horizontal walls and the adiabatic vertical walls, and a partition was situated perpendicularly at the mid-height of the one vertical insulated wall. The governing equations are solved by using the finite element method with Galerkin method. The computations were performed with the variation of the length and the thermal conductivity of the partition, and Rayleigh number based on the temperature difference between horizontal walls and the enclosure height with water(Pr=4.95). also, the effect of the inclination angles was studied for the transition to the oscillating flow. As the results, it was found that the intensity and frequency of oscillatory motion were affected significantly by the Rayleigh number and the length of partition. The effect of oscillatory motion was weaken with the increase of the thermal conductivity of partition. The inclination angle for the transition was raised with the increase of Rayleigh number and the length of partition.

A study on point defect for thermal annealed CuGaSe2 single crystal thin film (열처리된 CuGaSe2 단결정 박막의 점결함연구)

  • 이상열;홍광준
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.154-154
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    • 2003
  • A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

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