• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.261-264
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• 1991

Titanium carbide(TiC) films were deposited on stainless-steel sheets using HCD(Hollow Cathode Discharge) reactive ion plating. Acetylene gas was used as the reactant gas. The characteristics of TiC films were examined by X-Ray diffraction, $\alpha$-step, ESCA(Electron Spectroscopy for Chemical Analysis), and, AES(Auger Electron Spectroscopy). The results were discussed with regard to various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.270-274
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• 1997

The numerical model that can describe the ignition of the pseudospark discharge using hybrid fluid-particle method has been developed. The evolution process of the discharge has been divided into four phases along the potential distribution. After the plasma enters in the hollow cathode, the confining effect which is one of hollow cathode properties occurs and the electron current on anode rises rapidly. As the plasma expands successively, the sheath contracts and as the electric field in the sheath increases, the field-enhanced thermionic emission(Schottky emission) occurs. From numerical results, the physical mechanism that causes the rapid current rise in the ignition of the pseudospark discharge could be identified.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.291-296
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• 1997

The slotted type of hollow copper cathode was constructed and tested for its geometric stability and usability for laser operation at 780nm. The peak output power of copper ion laser emission was measured for different operating conditions. The IR-laser power was dependent on the parameters of the geometry of the hollow cathodes, discharge current and gas fillings. The peak power decreased with increasing neon pressure over 60%. One reason for this decrease in output power may be conjectured as hier due to the decreasing population of the upper laser level. The copper ion laser transition at 780 nm populated at the 5p level. The hollow cathode copper ion laser is operated in He and Ne mixture by electric discharge excitation and could be operated for more than 100 hours with only a 35% drop in the output power(2.8mW cw for 9.6cm active length).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.4
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• pp.641-647
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• 2008

In this paper, we have studied the basic discharge characteristics of ac-type cylindrical microcavity structure. The structure has a two electrodes, which are positioned in the bottom of the cavity and in the side wall of the cylinder, respectively. The discharge showed asymmetric phenomena depending on the position of a cathode electrode. When the bottom electrode was a cathode, the discharge was stronger even though the area of the cathode was smaller than that of the anode. Simulation results revealed that the focused electric field toward the bottom electrode increased ion density in the space which in turn strengthened the cathode sheath and ionization process.

• Journal of Industrial Technology
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• v.42 no.1
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• pp.19-27
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• 2022

This review will discuss the effort to understand the interfacial reactions at the anode and cathode sides of all-solid-state batteries. Antiperovskite solid electrolytes have received increasing attention due to their low melting points and anion tunability which allow controlling microstructure and crystallographic structures of this material system. Antiperovskite solid electrolytes pave the way for the understanding relationship between critical current density and mechanical properties of solid electrolytes. Microstructure engineering of cathode materials has been introduced to mitigate the volume change of cathode materials in solid-state batteries. The hollow microstructure coupled with a robust outer oxide layer effectively mitigates both volume change and stress level of cathode materials induced by lithium insertion and extraction, thus improving the structural stability of the cathode and outer oxide layer, which results in stable cycling performance of all-solid-state batteries.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.194-200
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• 2006

Titanium oxide films were deposited by the nozzle type HCP RT-MOCVD for the application of metal-oxide films. In the case of TTNB, after depositing films, films must be annealed at a proper temperature, but in the case of titanium ethoxide, titanium oxide films could be directly deposited by titanium ethoxide without general annealing. We could confirm that ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt, distance between cathode and substrate of 3 cm, deposition time of 20 min, and ratio of Ar to $O_2$ of 1 : 1. Therefore, we could obtain the titanium oxide film deposited by the nozzle type HCP RT-MOCVD without an annealing process and could apply in the metal-oxide deposition process at a low temperature.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.443-448
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• 1996

In order to plasma-sulfnitride by combining ion-nitriding of a steel and sputtering of MoS$_2$, chromium-molybdenum steel was plasma-sulfritrided using hollow cathode discharge with parallel electrodes which are a main of the steel and a subsidiary cathode of $MoS_2$. The treatment was carried out at 823K for 10.8ks under 665Pa in a 30% $N_2$-70% $H_2$ gas atmosphere. Plasma-sulfnitriding layers formed of the steel were characterized with EDX, XRD, micrographic structure observation and hardness measurement. A compound layer of 8-15$\mu\textrm{m}$ and nitrogen diffusion layer of about 400$\mu\textrm{m}$ were formed on the surface of plasma-sulfnitrided steel. The compound layer consisted of FeS containing Mo and iron nitrides. The nitrides of $\varepsilon$-$Fe_2_3N$ and $\gamma$'-$Fe_4N$ formed under the FeS. The thickness of compound layer and surface hardness were different with the gaps between main and subsidiary cathodes even in the same sulfnitriding temperature. The surface hardnesses after plasma-sulfnitriding were distributed from 640 to 830Hv. The surface hardness was higher in the plasma-sulfnitriding than the usual sulfnitriding in molten salt. This may be due to Mo in sulfnitriding layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.123-123
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• 1998

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.