• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.133-138
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• 1996

For the application of hydrogenated amorphous silicon (a-Si:H) p-i-n structural diode as the alpha particle spectroscopy, the induced charge collection was simulated based on a relevant non-uniform charge generation model. The simulation was accomplished for two extreme cases of the incident direction of alpha particle, p-and n-side, respectively. As expected, for the complete charge collection, the hole collection should be severely considered due to its poor mobility and the full depletion bias required. For the comparison of signal corresponding to the detector configuration or structure, although n-i-p configuration shows a wider range of linearity to the energy, p-i-n configuration is more suitable in the viewpoint of linearity and signal value for the considering energy range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.558-562
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• 2006

We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.519-526
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• 2024

This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Journal of Periodontal and Implant Science
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• v.29 no.1
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• pp.233-249
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• 1999

Primary fixation is one of the most important factor in establishing adequate osseointegration between implant and bone. To evaluate the initial healing response of bone around implants without primary bone contact, this study was designed to create considerable space between implant and bone in 5 mongrel dogs, about 1-year old. After 3 holes of 6.0mm in diameter were prepared at the femur neck of the dogs, commercially pure titanium thread type implants(STERI-$OSS^{(R)}$), 8mm in length and 3.8mm, 5.0mm and 6.0mm in diameter, were inserted. Implants were supported by only nonresorbable membrane($Teflon^{(R)}$), and the penetration of upper soft tissue into the gap was inhibited by it. The each implant was positioned in the center of the drilled hole. 9 implants with different diameters were inserted in 3 dogs for histologic observation, and 12 were inserted in 2 dogs for mobility test and removal torque test.Fluorescent dyes were injected in order of Doxycycline, Alizarin Red S, and Calcein at intervals of 2 weeks. At 4-, 8-, and 12-week after placement, 3 dogs were sacrificed for histologic observation, and at 8- and 12-week after placement, 2 dogs were sacrificed for mobility test using $Periotest^{(R)}$ (Simens AG, Bensheim, Germany) and torque test using Autograph AGS-1000D $series^{(R)}$(Japan). The result were as follows: 1. The wider the gap between bone and implant was, the less bone maturity was, and the later osseointegration was occurred. Trabecular direction of new bone around implant was changed from parallel to perpendicular to the implant, and the gap was filled with new bone, over time. 2. There was a decreasing tendency over time in the mobility of all implants, but the wider gap between bone and implant was, the smaller decrease of the mobility was. 3. There was a increasing tendency over time in the removal torque gauge of all implants, and the wider gap was, the smaller increase of the removal torque gauge was. The results suggest that osseointegration in case of implant without primary bone contact may be obtained by guided bone regeneration technique with prolonged healing period, but the time of second surgery should be considered carefully.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.210.2-210.2
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• 2013

현재 국내의 상용화된 디지털 방식 X-선 영상장치에서 간접변환방식은 대부분 CsI를 사용하고 있으며, X-선 흡수에 의해 전기적 신호를 발생시키는 직접변환방식은 Amorphous Selenium(a-Se)을 사용한다. a-Se은 진공 중에 녹는점이 낮아 증착시 substrate의 온도에 따라 민감한 변화를 보인다. 본 연구에서는 간접변환방식에 비해 높은 영상의 질을 획득할 수 있는 직접변환방식의 a-Se기반 X-선 검출기 제작 시 substrate에 인가된 온도에 따른 특성을 연구하여 최적화 된 substrate의 온도를 알고자 한다. 본 실험에서는 glass에 투명한 전극물질인 Indium Tin Oxide (ITO)가 electrode로 형성된 substrate를 사용하였으며 그 상단에 a-Se을 Physical Vapor Deposition (PVD)방식을 거쳐 X-선 검출기 샘플을 제작하였다. PVD 공정 시 네 개의 보트에 a-Se 시료를 각각 100g씩 총 400g을 넣고, $5{\times}10-5Torr$까지 진공도를 낮추었다. 보트의 온도는 $270^{\circ}C$에서 40분 $290^{\circ}C$에서 90분으로 온도를 인가하여 a-Se을 기화시켜 증착하였다. 증착 시 substrate 온도를 각각 $20^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, $70^{\circ}C$ 네 종류로 나누어 실험을 진행하였다. 끝으로 증착된 a-Se 상단에 Au를 PVD방식으로 electrode를 형성시켜 a-Se기반의 X-선 검출기 샘플 제작을 완료하였다. 제작된 a-Se기반의 X-선 검출기 샘플의 두께는 80에서 $85{\mu}m$로 온도에 따른 차이가 없었다. 이후에 전기적 특성을 평가하기위해 electrometer와 oscilloscope를 이용하여 Dark current와 Sensitivity를 측정하여 Signal to Noise Ratio(SNR)로 도출하였으며 Scanning Electron Microscope(SEM) 표면 uniformity를 관찰하였다. 또한 제작된 a-Se기반 X-선 검출기 샘플의 hole collection 성능을 확인하고자 mobility를 측정하였다. 측정결과 a-Se의 work function을 고려한 $10V/{\mu}m$기준에서 70kV, 100mA, 0.03sec의 조건의 X-선을 조사 하였을 때 Sensitivity는 세 종류의 검출기 샘플이 15nC/mR-cm2에서 18nC/mR-cm2으로 비슷한 양상을 나타내었지만, substrate온도가 $70^{\circ}C$때의 샘플은 10nC/mR-cm2이하로 저감됨을 알 수 있었다. 그리고 substrate온도 $60^{\circ}C$에서 제작된 검출기 샘플의 전기적 특성이 SNR로 환산 시, 15.812로 가장 우수한 전기적 특성을 나타내어 최적화 된 온도임을 알 수 있었다. SEM촬영 시 온도상승에 따라 표면 uniformity가 우수하였으며, Mobility lifetime에서는 $60^{\circ}C$에서 제작된 검출기 샘플이 deep trap 수치가 높아 hole이 $0.04584cm2/V{\cdot}sec$로 $0.00174cm2/V{\cdot}sec$의 electron보다 26.34배가량 빠른 것을 확인하였다. 본 연구를 통해 a-Se증착 시, substrate에 인가된 온도는 균일한 박막의 형성 및 표면구조에 영향을 미치며 온도가 증가할수록 안정적인 전기적 특성을 나타내지만 $70^{\circ}C$이상일 시, a-Se층의 결정화가 생겨 deep trap을 발생시켜 전기적 특성이 저하됨을 확인 할 수 있었다. 따라서 증착 시의 substrate의 온도 최적화는 a-Se기반 X-선 검출기의 안전성 및 성능향상을 위해 불가피한 요소가 된다고 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Advances in nano research
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• v.2 no.1
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• pp.1-14
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• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.772-775
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• 2013

We have grown a p-GaN film on sapphire by MOCVD and explored the post-annealing effort on the film after depositing a $2500{\AA}$ thick $SiO_2$ protective layer on it. By etching the $SiO_2$ protective film after the heat treatment, the hole concentration was measured, and compared with the data values before the heat treatment. In addition to the concentration, the hole mobility was also monitored while varying the atmospheric gas ratio of $N_2$ and $O_2$, the rapid thermal annealing temperatures ($750^{\circ}C$ and $650^{\circ}C$) and times (1 to 15 min.) In order to investigate the optical and structural properties of the film, room temperature and low temperature PL measurements were conducted.