• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.207-208
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• 2000

The temporal response of the electroluminescence (EL) has been studied in the organic electroluminescent devices fabricated with a vacuum-deposited poly(p-phenylene) (PPP) thin film upon the application of a rectangular driving voltage. The blue EL emission arises with a delay time of several hundred nanoseconds and then saturates with the rise time of less than microsecond. The EL delay time is considered as the transit time of holes in the PPP thin film since the hole mobility is much larger than the electron mobility in PPP. The hole mobility is estimated to be ${\sim}$ $1{\times}10^{-5}$ $cm^2/Vs$ in the vacuum-deposited PPP film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.343-344
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• 2007

Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of $400\;{\mu}m$. The measured transit times of hole and electron were about $8.73\;{\mu}s\;and\;229.17\;{\mu}s$, respectively. The experimental results showed that the hole and electron drifting mobility were $0.04584\;cm^2V^{-1}S^{-1}\;and\;0.00174\;cm^2V^{-1}s^{-1}\;at\;10\;V/{\mu}m$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1404-1407
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• 2005

We have fabricated organic light-emitting diodes using poly(N-vinylcarbazole)(PVK) doped with N,N'- diphenyl-N,N'-bis(3-methylphenyl)-[l,l'-biphenyl]- 4,4/-diamine (TPD) as the hole transport layer. TPD molecules act as the trapping sites in PVK and reduce the hole mobility, which can enhance the electronhole balance in the emitting layer, resulting in the enhanced device performance. We have found the optimum ratio of TPD to PVK for the EL efficiency.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 한국인쇄학회지
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• 제22권1호
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• pp.75-82
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• 2004

The photoluminescence and electroluminescence of poly(9-vinylcarbazole) (PVCz) containing different ratio 1.3,5-dimethly-3,5-di-tert-butyl-4,4-diphenoquinone (MBDQ), 1.3,5-diemthyl-3.5-di-tert-butyl-4,4-stylbenquinone (MBSQ) were characterized. As the contents of DQ and SQ increased, the intensity of peaks at 516 and 540nm increased in PL spectra. The results of TOF measurement were shown that the hole mobility of PVCz decreased as the ratio of DQ or SQ increased. On the other hand, the electron mobility of PVCz increased. Therefore Electron transport is more favorable than hole transport in these charge transfer complexes, due to the stronger localization of the holes. Evidence for better electron transport is the higher mobility of electrons in pure DQ or SQ compared to hole mobility in pure PVCz, and lower DQ or SQ concentration required for equivalent mobilities in the charge-transfer complexes.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1341-1346
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• 2004

The OLED research is gone for two directions. One is material development research, and another one is structural improvement part. All two are thing to heighten luminescence efficiency of OLED. n other to improve luminescence efficiency of OLED Electron - hole pairs must consist much more in the device Their profiles are sensitive to mobility velocity of electrons and holes. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We suggest improving the efficiency of OLEDS would be to balance the injection of electrons and holes into light emission layer of the device. And, we improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in variable hole carrier transport layer's thickness.

• 한국항행학회논문지
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• 제21권4호
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• pp.347-352
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• 2017

본 논문에서는 셀룰러 기반 무선 인지망에서 스펙트럼 인지(CR)기술을 이용하여 모바일 사용자의 핸드오버 호의 손실확률을 줄이는 방법을 제안한다. 제안한 방법에서는 모바일이 방문할 셀을 Ziv-Lempel 알고리듬을 이용하여 예측하고, 방문할 셀에 할당된 채널이 부족할 때는 CR기술에 기초한 스펙트럼 홀 자원을 예측하여 모바일 사용자를 지원한다. 스펙트럼 홀 자원의 크기는 신경망기법으로 예측하며, 예측된 스펙트럼 홀 자원은 핸드오버 호가 초기 발생 호 보다 우선하여 사용할 수 있게 한다. 시뮬레이션을 통하여 셀룰러 이동 통신망에 CR기술을 사용함으로써 모바일 사용자의 핸드오버 호 손실확률을 줄일 수 있음을 보인다.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.61.2-61.2
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• 2015

In the past decades, green energy, such as solar energy, wind power, hydropower, biomass energy, geothermal energy, and so on, has been widely investigated and developed to solve energy shortage. Recently, organic solar cells have attracted much attention, because they have many advantages, including low-cost, flexibility, light weight, and easy fabrication [1-3]. Organic solar cells are as a potential candidate of the next generation solar cells. In this abstract, to improve the power conversion efficiency and the stability, the inverted polymer solar cells with various structures were developed [4-6]. The novel cell structures included the P3HT:PCBM inverted polymer solar cells with AZO nanorods array, with pentacene-doped active layer, and with extra P3HT interfacial layer and PCBM interfacial layer. These three difference structures could respectively improve the performance of the P3HT:PCBM inverted polymer solar cells. For the inverted polymer solar cells with AZO nanorods array as the electronic transportation layer, by using the nanorod structure, the improvement of carrier collection and carrier extraction capabilities could be expected due to an increase in contact area between the nanorod array and the active layer. For the inverted polymer solar cells with pentacene-doped active layer, the hole-electron mobility in the active layer could be balanced by doping pentacene contents. The active layer with the balanced hole-electron mobility could reduce the carrier recombination in the active layers to enhance the photocurrent of the resulting inverted polymer solar cells. For the inverted polymer solar cells with extra P3HT and PCBM interfacial layers, the extra PCBM and P3HT interfacial layers could respectively improve the electron transport and hole transport. The extra PCBM interfacial layer served another function was that led more P3HT moving to the top side of the absorption layer, which reduced the non-continuous pathways of P3HT. It indicated that the recombination centers could be further reduced in the absorption layer. The extra P3HT interfacial layer could let the hole be more easily transported to the MoO3 hole transport layer. The high performance of the novel P3HT:PCBM inverted polymer solar cells with various structures were obtained.