• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.32-38
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• 2023

With the transition from internal combustion engine vehicles to eco-friendly cars, it has become essential to systematically construct an education system for electric vehicles based on high-voltage electric devices. In this study, we discussed the establishment of an educational system for electric vehicles based on high-voltage electric devices and proposed methods for qualifications after completing the education. To ensure systematic education, we presented a classification of learners according to their levels and job competencies. Additionally, we emphasized the importance of providing adequate practical training equipment for courses that require higher qualifications. Finally, to distinguish between the levels of completion of training and practical skills, we highlighted the necessity of implementing a system to certificates to individuals who have successfully completed the systematic training program.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.379-381
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• 2002

Mitsubishi Electric Corporation has marketed a series of multimedia CRTs enabling bright picture windows in a high-resolution date display screen. The key components of the multimedia CRTs named Diamondtran $M^2$ are a high-gm (low drive-voltage) electron gun and an aperture grille mask. A high-gm electron gun has been developed by designing a beam forming region with high-gm configuration combining with a high current-density cathode. The development of next generation high-gm guns are also introduced

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.371-371
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• 2009

For the application of superconducting wires to fault current limiting devices, it is required that they have a high rated voltage when a fault occurs. Stabilizer-free coated conductors, particularly, shows a good performance for the high rated voltage, which is beyond 0.6 V/cm. In this study, using the stabilizer-free coated conductors, we made fault current limiting devices and examined their characteristics. Fault current limiting devices were fabricated with a shape of the cylinder of a mono-filar coil winding. Stabilizer-free coated conductors were wound along the mono-filar coil line and the terminal parts between the wire and metal were soldered using In solder. Two kinds of devices were fabricated by a different method in the terminal joint, one was made by a soldering and the other was made by a soldering-free joint. Critical currents and resistance at the joint parts were measured. In addition, long-time current flowing tests were also carried out for the characterization of the fault current limiting devices.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.699-704
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• 2005

In the station of the railway and the subway various illumination equipment and a general power equipment for a passenger convenience, the signal equipment and the communication equipment which is necessary to the train operation provided. At the all of like this equipment from the electric room which is established in each station by changing from high voltage to low voltage and it supplies from the illumination transformer, the power transformer and the signal transformer. If it supplies to the equipment from the high voltage to the low voltage, it must be established to contact protection device in between the high voltage coil and the low voltage coil. Also it must do the grounding faulting device at the low voltage lines, the earthing devices at apparatus for the protection of an electric shock and an electric fire by the electric relation law. Compared the related regulations between the facilities which require protective functions such as grounding fault or earthing in public utilities like subway stations, and the facilities which do not require line earthing or protective functions such as electricity supplied for signalling the train. Also, will describe a countermeasure for the accident from a grounding fault.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.6-10
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• 2018

Organic light emitting devices have attracted the attention of many people because of their high potential for self-emission and flexible display devices. However, due to limitations in device efficiency and lifetime, partial commercialization is underway. In this paper, we have investigated the electrical conduction mechanism of the organic light emitting device by the temperature and the thickness of the light emitting layer through the current - voltage characteristics with respect to the conduction mechanism directly affecting the efficiency and lifetime of the organic light emitting device. Through the study, it was found that the conduction in the low electric field region is caused by the movement of the heat excited charge in the ohmic region and the tunneling of the electric charge due to the high electric field in the high electric field region.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.16-20
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• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.2
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• pp.82-86
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• 2012

Recently, due to the expansion of electric power demands, nonlinear load such as converters and inverters connected to the electric power distribution system, and extensive application of harmonic generation sources with power electric devices, disturbance of the electric power system and its influences on industries have been continuously increasing. In this research, power quality was analyzed for 11 extra-high voltage customers by considering voltage unbalance condition, power factor, THD and TDD. This research will be utilized as fundamental data to improve power quality for power utility.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.35-43
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• 2002

In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.