• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• 전기전자학회논문지
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• 제24권1호
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• pp.140-146
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• 2020

We investigated light extraction film based on polymer dispersed liquid crystal (PDLC) for application in organic light emitting diodes (OLEDs). At least 30 seconds of direct UV irradiation process for curing PDLC film on a bottom-emitting OLEDs was successfully achieved without damage on the intrinsic properties of the OLED. We demonstrated that high haze and transmittance can be tuned simultaneously by controlling the UV curing time. By adding PDLC as an external layer without any additional treatment, the light scattering and extraction is increased. Consequently, a PDLC scattering film with 89.8% and 59.9 of total transmittance and haze respectively, achieved about 16% of light intensity enhancement from integrating sphere measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.138-138
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Al (AZOB) films was investigated. AZOB films were deposited on PC substrates by DC magnetron sputtering. The thickness range of films were from 300 nm to 800 nm to identified as increasing thickness, stress between substrate and AZOB film. The. average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $1.58\times10^{-3}\Omega$-cm was obtained. We presented that a AZOB film of 500 nm was optimization to obtain a high transmittance and conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.248-249
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• 2008

ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.

• Food Science and Biotechnology
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• 제15권6호
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• pp.925-930
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• 2006

Chitosan-based nanocomposite films were prepared using a solution intercalation method incorporating varying amounts of organically modified montmorillonite (Cloisite 30B) from 0 to 30 wt%. The nanocomposite films prepared were optically clear despite a slight decrease in the transmittance due to the spatial distribution of nanoclay. X-ray diffraction patterns indicated that a certain degree of intercalation or exfoliation formed when the amount of clay in the film was low and that microscale tactoids formed when the clay content in the sample was high (more than 10 wt%). The tensile strength (TS) of the chitosan film increased when the clay was incorporated up to 10 wt% and then decreased with further increases in the clay content of the film. The elongation at break (E) increased slightly upon the addition of low levels of clay up to 5 wt% and then decreased with further increases in the amount of the clay in the film. The water vapor permeability (WVP) decreased exponentially with increasing clay content. The water solubility (WS) and swelling ratio (SR) of the nanocomposite films decreased slightly, indicating that the water resistance of the chitosan film increased due to the incorporation of the nanoclay.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• 한국재료학회지
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• 제23권9호
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• 한국재료학회지
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• 제19권5호
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• pp.245-252
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• 2009

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glass substrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a high transmittance of above 80% in the visible range and a low electrical resistivity of $4.5{\times}10^{-4}{\Omega}{\cdot}cm$. The surface morphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature, working pressure, and etching time in the etching process. The optimized surface morphology with a crater shape is obtained at a heater temperature of $350^{\circ}C$, working pressure of 0.5 mtorr, and etching time of 45 seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) are significantly affected by the resulting surface morphologies of textured films. The film surfaces, having uniformly size-distributed craters, represent good light scattering properties of high haze and ADF values. Compared with commercial Asahi U ($SnO_2$:F) substrates, the suitability of textured ZnO:Al films as front electrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical and optical properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.483-485
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• 2014

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.