• 공업화학
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• 제10권4호
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• pp.603-607
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• 1999

Potassium iodide(KI)를 함유하는 poly(vinyl alcohol)(PVA) 필름의 산화공정에 의해 제조된 PVA-iodine 착제물(PVA_KI계)의 편광특성을 조사하였다. PVA-KI계 편광필름의 UV-visible 스펙트럼은 220 nm, 290~360 nm와 650 nm에서 $I^{-}$, $I{_3}{^-}$와 $I{_5}{^-}$ 발색단에 해당하는 흡수밴드를 각각 나타냈다. PVA-KI계 필름의 편광효율과 투과도는 산화시간, 연신비율, KI 농도 등에 크게 의존하였다. 제조된 편광필름은 99.5%와 45%의 높은 편광효율 및 투과도를 나타냈다. 특히 산화공정에 의해 제조된 편광필름의 열저항은 기존의 PVA-$I_2$계 편광필름에 비하여 뛰어났다. 이러한 결과는 PVA 편광필름의 산화공정의 차이에 기인된다고 생각된다.

• 한국재료학회지
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• 제20권7호
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.40-43
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• 2016

Transparent color coating films were fabricated on a glass substrate by using sol-gel hybrid binder and organic dye. Sol-gel hybrid binder coating film fabricated with PTMS of 0.03 mole showed a very high pencil hardness of 9 H. As the withdrawal speed increased from 1.0 mm/s to 5.0 mm/sec, The yellowness ($b^*$) of coating glass also gradually increased. The transmittance of yellow color coating glass was 82.6% and the haze of coating glass was 0.35%. Red and blue color coating glasses also showed the high transmittance of 62.4% and 80.6% respectively. The surface hardness of color coating films was 6 H.

• 생물환경조절학회지
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• 제16권2호
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• pp.96-100
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• 2007

피복자재별로 전광선투과율은 차이가 거의 없었으나, 물방울과 먼지의 부착량이 적은 J-2에서 시설 내 광투과율은 78.2%로 가장 높았다. 자외선 투과율이 완전히 차단된 필름은 J-2이었고, 나머지의 자외선 투과율은 $62{\sim}76%$ 정도이었다. 무가온 참외재배시기에 터널 안이 노지보다 기온은 $15{\sim}21^{\circ}C$, 지온은 $20{\sim}25^{\circ}C$ 정도 높았다. 피복자재별로 기온은 $6^{\circ}C$, 지온이 $5^{\circ}C$ 정도 차이가 나타났으며 기온과 지온 모두 J-2 에서 가장 높았다.

• 생물환경조절학회지
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• 제5권1호
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• pp.23-33
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• 1996

시설하우스에 이용되는 시설자재의 규격화와 품질개선을 유도하기 위하여 피복자재의 종류별, 두께별로 물리적 기계적 특성을 시험 분석하였다. 피복재의 물리적 기계적 특성은 충격강도, 인장 인열강도 및 파장별 투과율을 측정하였으며, 시험한 결과를 요약하면 다음과 같다. 1. 다트식 낙추시험에서 연질필름의 충격 강도는 피복재가 두꺼울수록 파괴하중이 증가하여 50% 파괴수준의 하중이 158-213g 범위에 있었으며, LDPE 필름이 대체로 높게 나타났다. 2. 충격파괴정도를 보면 전혀 파괴되지 않는 최대 충격하중이 62-192g 범위였으며, 0.05mm에 비해 0.1mm 두께의 필름이 충격에 견디는 힘이 1.8-3.2배 더 강한 것으로 나타났다. 3. 인장하중은 0.95-2.22kg 범위로 피복재 길이 방향이 높고, LDPE 필름이 높게 나타났으며, 신장율은 345-1020% 범위로 길이보다 폭방향이 1.4-2.7배 더 신장되는 것으로 나타났다. 4. 인열강도는 80.S-121.7kg/cm의 범위로 LDPE 필름이 높고 EVA가 낮은 것으로 나타났으며, 길이방향보다 폭방향이 더 큰 값으로 나타났다. 5. 연질필름의 종류별 광투과특성은 자외선 영역에서 87-92%로 큰 차이가 나타나지 않았으나 가시광선 영역에서 높은 투광율을 나타내었다.