• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.603-607
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• 1999

The polarization characteristics of poly(vinyl alcohol)-iodine complex, (PVA-KI system) prepared by the oxidation process of PVA film containing a potassium iodide (KI) were investigated. The UV-visible spectrum of the PVA-KI system polarizing film showed avsorption bands corresponding to $I^{-}$, $I{_3}{^-}$ and $I{_5}{^-}$ chromophoric species at 220 nm, 290~360 nm, respectively. The polarization efficiency and transmittance of PVA-KI system film were significantly influenced by oxidation time, stretching ratio and concentration of KI. The prepared polarizing film exhibited a high polarization efficiency(99.5%) and transmittance(45%). Especially, the heat resistance of the polarizing film was higher than that of a commercial PVA-$I_2$ polarizing film. It may be argued that the result should come from a difference in oxidation process of PVA polarizing film.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1465-1468
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• 2010

The wet etching is a process using chemical solution and occurring chemical reaction on substrate surface. when we do wet etching process, we have to consider stoichiometry, etching time and temperature of etchant for good resolution. In this experiment, we used Cr, Al andIndium-tin-oxide (ITO) metal and we deposited them with DC sputtering machine. The Cr thin film metal thickness is about $1300{\AA}$, ITO films show a low electrical resistance and high transmittance in the visible range of an optical spectrum and Ai film is used for signal line. We measured and analysed wet etching properties on the metal thin films.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.8
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.40-43
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• 2016

Transparent color coating films were fabricated on a glass substrate by using sol-gel hybrid binder and organic dye. Sol-gel hybrid binder coating film fabricated with PTMS of 0.03 mole showed a very high pencil hardness of 9 H. As the withdrawal speed increased from 1.0 mm/s to 5.0 mm/sec, The yellowness ($b^*$) of coating glass also gradually increased. The transmittance of yellow color coating glass was 82.6% and the haze of coating glass was 0.35%. Red and blue color coating glasses also showed the high transmittance of 62.4% and 80.6% respectively. The surface hardness of color coating films was 6 H.

• Journal of Bio-Environment Control
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• v.16 no.2
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• pp.96-100
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• 2007

There was no difference in total light transmissivity of covering materials. But the light transmittance of J-2 in greenhouse was by 78.25 which was higher than any other film. The high light transmittance of J-2 was come from low water condensation and dust attached in film surface. The ultraviolet light of J-3 was completely intercepted. The ultraviolet transmittance rate of others was from 62 to 76%. In no heating oriental melon cultivation, the air temperature in tunnel was 15 to $21^{\circ}C$ higher than outer, and the soil temperature in tunnel was 20 to $25^{\circ}C$ higher than outer. Air temperature and soil temperature of J-2 were higher than any other film.

• Journal of Bio-Environment Control
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• v.5 no.1
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• pp.23-33
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• 1996

This study was performed to induce a quality improvement and standardization of materials used for greenhouse. For this purpose, physical and mechanical properties of agricultural films for greenhouse were measured by kinds and thickness of the films. The properties are composed of impact, tensile, tear propagation strength and light transmittance. The results were summarized as follows. 1. At the impact test result of the falling dart, the thicker the film, the greater the impact strength of soft film. The impact weight at 50 percents is from 158g to 213g and the strength of low density polyethylene(LDPE) film is higher than the rest of any other films. 2. Seeing the leveling of the impact rupture, maximum impact weight which was ruptured very little ranges from 62g to 192g. The impact strength of 0.1mm films was higher than that of 0.05mm as from 1.8 to 3.2 times. 3. Tensile weight covers from 0.95kg to 2.22kg in the test materials, and the weight of lengthwise film is larger than that of width. LDPE film has high value of tensile weight. Elongation range is from 345 to 102 percent and lengthwise elongation is greater than width as much as from 1.4 to 2.7 times. 4. Tea. propagation strength ranges from 80.5kg/cm to 121.7kg/cm, and unlike which of LDPE film has high value, EVA film has low value in the films tested. The width strength is higher than the lengthwise. 5. The light transmittance of the soft film is about 78-92 percent in the range of ultraviolet ray, but has high value in the visible ray range.