• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.429-437
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• 2017

Micro hollow plate type silica with low refraction properties was synthesized and its hollow structure was applied as an optical structure to develop a light diffusion material that simultaneously satisfies the requirements of good light diffusibility, high transmissibility, and high luminance. The developed light diffusion material was applied to a light diffusion film and the film's optical properties were assessed. Hollow silica was synthesized by precipitation method using $Mg(OH)_2$ core particles, sodium silicate, and ammonium sulfate as the silica precursors. The concentration of the silica precursor was adjusted to control hollow silica shell thickness. The total light transmittance of the light diffusion film composed of the hollow silica was 94.55%, which was 4.57% higher than that of the PC film; new film's haze was 71.20%, which was 70.9% higher. Furthermore, the luminance increased by 5.34% compared to that of the light source. The reason for the results is not only that the micro plate type hollow silica, which has a low refractive property, played a role in reducing the difference in refractive index between the medium boundaries, but also that there was a light-concentrating effect due to the changing of light paths to the front direction inside the hollow structure. Optical simulation verified the enhanced optical properties when hollow silica was applied to the light diffusion film.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.81-86
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• 2016

$Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.233-242
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• 2023

In recent years, energy-management studies in buildings have proven useful for energy savings. Typically, during heating and cooling, the energy from a given building is lost through its windows. Generally, to block the entry of ultraviolet (UV) and infrared (IR) rays, thin films of deposited metals or metal oxides are used, and the blocking of UV and IR rays by these thin films depends on the materials deposited on them. Therefore, by controlling the thicknesses and densities of the thin films, improving the transmittance of visible light and the blocking of heat rays such as UV and IR may be possible. Such improvements can be realized not only by changing the two-dimensional thin films but also by altering the zero-dimensional (0-D) nanostructures deposited on the films. In this study, 0-D nanoparticles were synthesized using a sol -gel procedure. The synthesized nanoparticles were deposited as deep coatings on polymer and glass substrates. Through spectral analysis in the UV-visible (vis) region, thin-film layers of deposited zinc oxide nanoparticles blocked >95 % of UV rays. For high transmittance in the visible-light region and low transmittance in the IR and UV regions, hybrid multiple layers of silica nanoparticles, zinc oxide particles, and fluorine-doped tin oxide nanoparticles were formed on glass and polymer substrates. Spectrophotometry in the UV-vis-near-IR regions revealed that the substrates prevented heat loss well. The glass and polymer substrates achieved transmittance values of 80 % in the visible-light region, 50 % to 60 % in the IR region, and 90 % in the UV region.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.21-25
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• 2007

Multilayer transparent electromagnetic wave shielding film with 1 m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23dB(99.5%) in 2-18 GHz range and the transmittance of 83.1% in 400-700nm.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.645-649
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• 2009

We investigated the effects of a high density $O_2$ plasma treatment on the structural and electrical properties of Ga-, B- codoped ZnO (GZOB) films. The GZOB films were deposited on polymer substrate without substrate heating by DC magnetron sputtering. Prior to the GZOB film growth, we treated a polymer substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZOB film, about 80 %, was maintained regardless of the plasma pre-treatment. The resistivity of the GZOB film on PC substrate decreased from 9.08 ${\times}$ $10^{-3}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 2.12 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment. And PES substrate decreased from 1.14 ${\times}$ $10^{-2}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 6.13 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment.