• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.766-770
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• 2004

High-transmittance film was coated by using spherical silica nano colloids. Silica colloid sol was preservred between two inclined slide glasses by capillary force, and particles were stacked to form a film onto the substrate as the upper glass was sliding. As the sliding speed increased, the thickness of the film decreased and light transmittance varied. The microstructure observed by SEM showed that silica particles were nearly close packed, which enabled the calculation of the effective refractive index of the film. The film thickness calculated from the wavelength of maximum transmittance and the effective refractive index was well coincided with the thickness observed by SEM and measured by profiler. The maximum transmittance of $94.7\%$ was obtained. This means that $97.4\%$ of transmittance or $1.3\%$ of reflectance can be achieved by simple process if both sides of the substrate are coated.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.399-404
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• 2005

Anti-reflection film was coated by using spherical silica nano colloidal particles and fumed silica particles. Silica colloid sol was reserved between two inclined slide glasses by capillary force, and particles were stacked to form a film onto the substrate as the upper glass was sliding. The deposition processes were studied to enhance the wavelength dependency of the light transmittance and to control the effective refractive index of the film. Both of the spherical and fumed silica particles showed an enhancement of $4.0-4.4\%$ in light transmittance by one step coating. The dependence of the transmittance on wavelength was largely improved at the longer wavelength by partial coating of fumed particles on the film of spherical particles. The effective refractive index of the film was controlled by removing latex particles that were co-deposited with silica particles. Using this process the light reflectance from one side of the glass substrate could be reduced from $4.2\%$ to $0.6\%$ although zero reflectance was not achieved due to the agglomeration of the latex particles.

• Journal of Bio-Environment Control
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• v.18 no.3
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• pp.232-237
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• 2009

This study was performed to investigate the effect of high performance greenhouse films on growth and fruit quality of tomato. For this purpose, polyolefin (PO), fluoric, antidrop, antifog and thermal films were compared to normal film, ethylene vinyl acetate (EVA). In spectral irradiance of the films, UV ($300{\sim}400nm$) transmittance was highest in fluoric film and lowest in PO film. PAR (photosynthetically active radiation, $400{\sim}700nm$) transmittance was higher in fluoric, thermal and PO film, and near infrared ray (NIR, $700{\sim}1,100nm$) transmittance was higher in high performance films, compared to the EVA film. Total light transmittance was higher in order of fluoric, antifog, anti drop, PO, thermal, and EVA film. Day air temperature in greenhouse was highest under fluoric film and lowest under EVA film due to the light transmittance, while night air temperature was highest under PO and anti drop film due to the thickness of film. Tomato fruits grown under the high performance films had 0.2 to $0.5^{\circ}Bx$ higher soluble solids and 15 to 30% higher lycopene content, compared to those grown under the EVA film. The results showed that tomato fruit quality such as soluble solids and lycopene content can be heightened in terms of much irradiation and better light quality of high performance films, compared to the nomal film, EVA film.

• Polymer(Korea)
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• v.36 no.5
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• pp.662-667
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• 2012

Poly(ethylene terephthalate) (PET) base films with high light transmittance have been used for the substrate of various functional films in the flat panel display. The effects of the reflective index of coated films, the roughness of the film surface and the content of inorganic silica particles on the light transmittance were studied in this article. Light transmittance was increased by coating a water soluble resin with a low reflective index at an optimum thickness. The roughness of the film did not affect light transmittance when the Ra of the film surface was less than a quarter of the wavelength of incident light. Inorganic silica particles decreased light transmittance due to their absorbance and scattering of the incident light.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.791-798
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• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1433-1435
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• 1997

ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.

• Textile Coloration and Finishing
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• v.16 no.4
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• pp.19-25
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• 2004

Both poly(vinyl alcohol)$(PVA)-I_2$ and PVA-dye polarizing film were prepared using PVA with number-average degree of polymerization of 1,700, 2,300, 2,600. The optical property of used dye in this study closed to the that of iodine. The PVA-dye polarizing film was prepared through the dyeing process. In comparison of the result of the measurement of the heat and humidity resistance of two types polarizing films, it of PVA-dye polarizing film was higher than that of a conventional $PVA-I_2$polarizing film. The transmittance and the polarization efficiency of PVA-dye polarizing film was significantly influenced by dye concentration, dipping time, salt concentration, and temperature of dye bath. The PVA-dye polarizing film exhibited a high polarization efficiency of 99.3% and a good transmittance of 42.4%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.49-53
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• 2023

Expanding the supply of BIPV is crucial to strengthening the competitiveness of the photovoltaic industry and achieving Nationally Determined Contributions through the zero-energy building mandatory policy. BIPV is a technology that integrates into the building envelope to generate electricity and provide functions as a building material. It is suitable for domestic environments with many high-rise buildings due to the narrow land area and urbanization. To expand the supply of BIPV, economics, safety, and aesthetics must be ensured. In this study, a color BIPV module with a color PET film applied as a front material was manufactured for aesthetic and economic feasibility. The relationship between power output and transmittance according to color was analyzed. By analyzing the power output of the module and the transmittance of the film, the wavelength band (transmittance reduction band) that has the greatest effect on efficiency was analyzed regarding the color of the film. The red film showed the narrowest transmittance reduction band and the lowest degree of decrease in transmittance, making it ideal for minimizing the efficiency decrease rate compared to existing ones.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.