• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.158-158
• /
• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.185-185
• /
• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Korean Journal of Medicinal Crop Science
• /
• v.26 no.5
• /
• pp.417-429
• /
• 2018

Background: The objective of this study was to make colloidal dispersions of the active compounds of radix of Angelica gigas Nakai that could be charaterized as nano-composites using hot melt extrusion (HME). Food grade hydrophilic polymer matrices were used to disperse these compound in aqueous media. Methods and Results: Extrudate solid formulations (ESFs) mediated by various HPMCs (hydroxypropyl methylcelluloses) and Na-Alg polymers made from ultrafine powder of the radix of Angelica gigas Nakai were developed through a physical crosslink method (HME) using an ionization agent (treatment with acetic acid) and different food grade polymers [HPMCs, such as HP55, CN40H, AN6 and sodium alignate (Na-Alg)]. X-ray powder diffraction (XRD) analysis confirmed the amorphization of crystal compounds in the HP55-mediated extrudate solid formulation (HP55-ESF). Differential scanning calorimetry (DSC) analysis indicated a lower enthalpy (${\Delta}H=10.62J/g$) of glass transition temperature (Tg) in the HP55-ESF than in the other formulations. Infrared fourier transform spectroscopy (FT-IR) revealed that new functional groups were produced in the HP55-ESF. The content of phenolic compounds, flavonoid (including decursin and decursinol angelate) content, and antioxidant activity increased by 5, 10, and 2 times in the HP55-ESF, respectively. The production of water soluble (61.5%) nano-sized (323 nm) particles was achieved in the HP55-ESF. Conclusions: Nano-composites were developed herein utilizing melt-extruded solid dispersion technology, including food grade polymer enhanced nano dispersion (< 500 nm) of active compounds from the radix of Angelica gigas Nakai with enhanced solubility and bioavailability. These nano-composites of the radix of Angelica gigas Nakai can be developed and marketed as products with high therapeutic performance.

• Journal of Powder Materials
• /
• v.27 no.5
• /
• pp.401-405
• /
• 2020

Magnesium hydroxide sulfate hydrate (MHSH) whiskers were synthesized via a hydrothermal reaction by using MgO as the reactant as well as the acid solution. The effects of the H₂SO₄ amount and reaction time at the same temperature were studied. In general, MHSH whiskers were prepared using MgSO₄ in aqueous ammonia. In this work, to reduce the formation of impurities and increase the purity of MHSH, we employed a synthesis technique that did not require the addition of a basic solution. Furthermore, the pH value, which was controlled by the H₂SO₄ amount, acted as an important factor for the formation of high-purity MHSH. MgO was used as the raw material because it easily reacts in water and forms Mg⁺ and MgOH⁺ ions that bind with SO₄^2- ions to produce MHSH. Their morphologies and structures were determined using X-ray diffraction (XRD) and scanning electron microscopy (SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.08a
• /
• pp.85-88
• /
• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• Korean Journal of Materials Research
• /
• v.23 no.3
• /
• pp.190-193
• /
• 2013

Spatial distributions of alloying elements of an Fe-based amorphous ribbon with a nominal composition of $Fe_{75}C_{11}Si_2B_8Cr_4$ were analyzed through the atom probe tomography method. The amorphous ribbon was prepared through the melt spinning method. The macroscopic amorphous natures were confirmed using an X-ray diffractometer (XRD) and a differential scanning calorimeter (DSC). Atom Probe (Cameca LEAP 3000X HR) analyses were carried out in pulsed voltage mode at a specimen base temperature of about 60 K, a pulse to base voltage ratio of 15 %, and a pulse frequency of 200 kHz. The target detection rate was set to 5 ions per 1000 pulses. Based on a statistical analyses of the data obtained from the volume of $59{\times}59{\times}33nm^3$, homogeneous distributions of alloying elements in nano-scales were concluded. Even with high carbon and strong carbide forming element contents, nano-scale segregation zones of alloying elements were not detected within the Fe-based amorphous ribbon. However, the existence of small sub-nanometer scale clusters due to short range ordering cannot be completely excluded.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.139-145
• /
• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.75-78
• /
• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of Magnetics
• /
• v.6 no.4
• /
• pp.122-125
• /
• 2001

Phase relationships of the HDDR (hydrogenation, disproportionation, desorption and recombination)-treated Sm$_3$(Fe,M)$_{29}$-type alloy with chemical composition of Sm$_{9}$Fe$_{65}$ $Co_{20}$V$_{6}$ were studied by X-ray diffraction (XRD) and by thermomagnetic analysis (TMA). The alloy was disproportionated into a mixture of $SmH_{x}$ and $\alpha$-Fe at high temperature under hydrogen gas. The disproportionated material was recombined into a mixture of Sm-(Fe,M) (M = Co and/or V) and $\alpha$-Fe phases. The structure of the Sm-(Fe,M) phase was dependent upon the recombination conditions, and a detailed phase diagram showing the phase relationships in the HDDR-treated alloy has been established. The Sm-(Fe,M) phase in material recombined above $900^{\circ}C$ had the $Sm_2Fe_{17}$-type structure, and it exhibited the $SmFe_{7}$-type structure when recombined at temperatures ranging from $700^{\circ}C$ to $850^{\circ}C$. Recombination below $650^{\circ}C$ led to the $SmFe_3$-type structure of the Sm-(Fe,M) phase. Curie temperatures of the Sm-(Fe,M) phases in the recombined material were significantly higher than those of the corresponding stoichiometric phases. It was suggested that the chemical composition of the Sm-(Fe,M) phases may be significantly different from that of the corresponding stoichiometric phases. All the HDDR-treated $Sm_{9}Fe_{65}Co_{20}V_{6}$ materials showed the soft magnetic features regardless of the phase constitution.n.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.1
• /
• pp.27-32
• /
• 2008

Novel long persistent phosphors of $CaZrO_3:Er^{3+}$ have been synthesized by traditional solid state reaction method. The long persistent phosphor crystalline particles were characterized by the X-ray diffraction (XRD), photoluminescence spectrophotometer, thermoluminescence (TL) and luminance meter. The results reveal that the samples are composed of single $CaZrO_3$ phase. The broadband emission spectra of 446 nm peak and 550 nm peak was revealed by synthesized at high temperature in $N_2$ gas. Green long persistent phosphors have been observed in the sys_em for over 6 h after UV irradiation (254 nm). The main emission peak was ascribed to $Er^{3+}$ ions transition from $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}\;and\;^2G_{9/2}{\rightarrow}^4I_{13/2}$, and the afterglow may be ascribed to the suitable trap centers in the $CaZrO_3$ host lattice.