• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.319-324
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• 2013

The partial oxidation reaction of methane was investigated to produce syngas with $Ni/CeO_2-ZrO_2$, $Ni-Ru/CeO_2-ZrO_2$ and $Ni-Pd/CeO_2-ZrO_2$ catalysts. Honeycomb metallic monolith was applied in order to obtain high catalytic activity and stability in partial oxidation reforming. The catalysts were characterized by XRD and FE-SEM. The influence of various catalysts on syngas production was studied for the feed ratio (O/C), GHSV and temperature. Among the catalysts used in the experiment, the $Ni-Pd/CeO_2-ZrO_2$ catalyst showed the highest activity. The 99% of $CH_4$ conversion was obtained at the condition of T=$900^{\circ}C$, GHSV=10,000 $h^{-1}$ and feed ratio O/C=0.55. It was confirmed that $H_2$ yield increased slightly as O/C ratio increased, while CO yield remained almost constant. Also, $CH_4$ conversion decreased as GHSV increased. It was found that the safe range of GHSV for high $CH_4$ conversion was estimated to be less than 10,000 $h^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Journal of Powder Materials
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• v.28 no.2
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.10-13
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• 2023

High-T_C superconductivity (HTSC) has been the central issue in the field of condensed matter physics for decades. An essential part of the research on superconductivity is finding new exotic superconductors. It was recently suggested that Ir-substituted La_0.7Sr_0.3MnO₃ (LSMIO) is a new high-T_C superconductor. However, systematic studies to experimentally verify the superconductivity have not been done. Here, we report the growth processes of LSMIO thin films and their electrical transport properties. We observed a clear negative correlation between the intensity of the laser utilized for film deposition and the Curie temperature of the deposited film. We attributed this effect to the suppression of Sr concentration in the LSMIO films as the laser intensity increased. However, our LSMIO films show conventional ferromagnetism instead of HTSC. To realize the HTSC in LSMIO systems, further exploration of diverse compositions of LSMIO compounds is essential.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Applied Chemistry for Engineering
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• v.35 no.1
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• pp.1-7
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• 2024

Mn-M/Al₂O₃ (M = Cu, Fe, Co, and Ce) catalysts were prepared for simultaneous oxidation of NO, CO, and CH₄, and their oxidation activities were compared. The Mn-Cu/ Al₂O₃ catalyst with the best simultaneous oxidation activity was characterized by XRD, Raman, XPS, and O₂-TPD analysis. The result of XRD indicated that Mn and Cu existed as complex oxides in the Mn-Cu/Al₂O₃ catalyst. Raman and XPS results showed that electron transfer between Mn ions and Cu ions occurred during the formation of the Mn-O-Cu bond in the Mn-Cu/Al₂O₃ catalyst. The XPS O 1s and O₂-TPD analyses showed that the Mn-Cu/Al₂O₃ catalyst has more adsorbed oxygen species with high mobility than the Mn/Al₂O₃ catalyst. The high simultaneous oxidation activity of the Mn-Cu/Al₂O₃ catalyst is attributed to these results. Gas-phase NO promotes the oxidation reactions of CO and CH₄ in the Mn-Cu/Al₂O₃ catalyst while suppressing the NO oxidation reaction. These results were presumed to be because the oxidized NO was used as an oxidizing agent for CO and CH₄. On the other hand, the oxidation reactions of CO and CH₄ competed on the Mn-Cu/Al₂O₃ catalyst, but the effect was not noticeable because the catalyst activation temperature was different.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.255-262
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• 1997

Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{\circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{\circ}C$, while films prepared at temperatures below $600^{\circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{\circ}C$ showed 14.5$\Omega\Box$, and it decreased to 8.9$\Omega\Box$ after the sample was annealed at $700^{\circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{\circ}C$.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.414-419
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• 2007

We report the electrical conductivity of the mixed alkali silicate glasses in the system (60-x)$SiO_2-40Na_2O-xCaO(x=0\sim15wt%)$ in the temperature range from $150^{\circ}C$ to $620^{\circ}C$. In the range from $150^{\circ}C$ to glass transition temperature$(T_g)$, the electrical conductivities of glass samples had a tendency to be proportion with temperature. The glasses of containing over 7.5wt% CaO showed lower conductivities than the glasses of containing 0 and 5wt% CaO because two kinds of alkali ions$(Na^+,\;Ca^{2+})$ were obstructed each other. On the other hand, in the range from $T_g$ to $620^{\circ}C$, the electrical conductivity of glasses($7.5{\leq}x{\leq}12.5$) was unstable and decreased in some region. From XRD results, the $Na_4Ca(SiO_3)_3$ phase were observed in these glasses. This means the alkali ions didn't behave as carrier, it seems that this caused the conductivities decrease. In case of glass of containing 15wt% CaO, any crystal phase were not observed. This means the alkali ions behaved as carrier, it consequently seems the conductivity increased.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.238-243
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• 2005

Mg and Mg-based alloys are most important hydrogen storage materials. It is a lightweight and low-cost materials with high hydrogen storage capacity. However, the formation of hydride at high temperature, the deterioration effect, the hydriding and dehydriding kinetics are bad factor for application. In this study, Mg and Ni have been produced by hydrogen induced mechanical alloying(HIMA) process. The raw materials, Mg(purity 99.9%) chip and Ni(purity 99.95%) chip was prepared by using a planetary ball mill apparatus(FRITSCH pulverisette 5). The balls to chips mass ratio(BCR) are 30:1. The hydrogen pressure induced 2.0MPa and milling times were 12, 24, 48, 72, 96 hours with a rotating speed of 200rpm. X-ray diffraction(XRD) analysis was made to characterize the crystallite size and misfit strain. The crystallite size measured by laser particle size analysis(PSA). Microstructure changes were investigated by scanning electron microscopy(SEM) and the transmission electron microscopy(TEM). The hydrogen storage properties were evaluated by using an Sivert's type automatic pressure-composition-therm(PCT) apparatus.