• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.194-194
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• 2003

As a result of the recent miniaturization an enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with high magnetic permeability in the high frequency range, high saturation magnetization, in high electrical resistivity, and low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm and 1 $\mu\textrm{m}$ thickness were deposited on Si wafer, using RF magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2mTorr, O$_2$ partial pressure of 5%, input power of 400W, and Al pellets on an Fe disk with purity of 99,9%. Magnetic properties of the continuous films as followed: the 4$\pi$M$\_$s/ of 19.4kG, H$\_$c/ of 0.6Oe, H$\_$k/ of 6.0Oe and effective permeability of 2500 up to 100㎒ were obtained. In this work, we expect to enhance effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.729-732
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• 2001

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.172-176
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• 1995

$YBa_2Cu_3O_{7-y}$ thin films have been prepared on MgO(100)substrates placed on-axis to the target by dc magnetron sputtering in a variety of oxygen/argon gas pressures with different substrate-target distances. We found that films with the c-axis perpendicular to the substrate deposited in an optimally high gas pressure with on-axis substrate-target configuration do. Increasing the substrate-target distance was found to be effetive in reducing the resputtering effect and enhancing superconductivity of films, but not so much $\alpha$-and c-axis growth of YMCO films on MgO substrates. Dependences of the Tc, the rationj of resistances at 300K and 100K, and the X-ray diffraction pattern on the gas pressure and the substrate target distance are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.627-628
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• 2006

The present work is a study on the argon gas pressure effects of Sinter/HIP sintering on microstructure and strength of different grades of TiC-NiMo cermets. Titanium carbide in the composition of different grades of TiC-NiMo cermets was ranged from 40 to 80 wt.% and the ratio of nickel to molybdenum in the initial powder composition was 1:1, 2:1 and 4:1 respectively. On the sintered alloys, the main strength characteristic, transverse rupture strength (TRS) was measured. Furthermore, the microstructure parameters of some alloys were measured and the pressure effect on pore elimination was evaluated. All the results were compared with common, vacuum sintered alloys. The TRS values of TiC-NiMo cermets could be considerably improved by using Sinter/HIP technique, for high-carbide fraction alloys and for alloys sintered at elevated temperatures.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1041-1042
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• 2006

High heat-resistant Al-Fe-V-Si and Al-Fe-V-Si-X rapidly solidified powder metallurgy (RS P/M) alloys have been developed under well-controlled high purity argon gas atmosphere. The $Al_{90.49}Fe_{6.45}V_{0.68}Si_{2.38}$ (at. %) RS P/M alloy exhibited high elevated-temperature strength exceeding 300 MPa and good ductility with elongation of 6 % at 573 K. Reduction of $H_2O$ partical pressure in P/M processing atmosphere led to improvement in mechanical properties of the powder-consolidated alloys under elevated-temperature service conditions. Ti addition to the Al-Fe-V-Si conduced to enhancement of the strength at room temperature. The tensile yeild strength and ultimate strenght were 545 MPa and 722 MPa, respectively.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.225-230
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• 2013

Cryopump removes gas molecules by condensation and adsorption. Therefore, cryo-surface temperature and corresponding vapor pressure influence directly the pumping performance. If the surface temperature of any part is neither low nor high, there occurs the desorption of gas molecules condensed or adsorbed, and the emitted molecules can be captured again, which leads to a time-consuming and fluctuating change of the pressure. Though every gas can show such a pressure instability at a specified temperature range, the instability generated in a sputter system using Ar as a working gas and operating with a cryopump is especially undesirable. In this paper the cause of the argon instability is analyzed and corrective is provided through the measurement of the Ar recovery time.

• Journal of Powder Materials
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• v.28 no.4
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• pp.325-330
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• 2021

In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125-205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIP-ZnS was obtained under the optimal conditions (1010℃, 205 MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.