• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.45-45
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• 2010

Nanoporous anodic alumina membranes (NAAM) with high aspect ratio, self-ordered pore array were fabricated by high-field 2-step anodization method. High voltages of 80, 100, 120 and 140 V as well as 40 V for comparison were applied to an aluminum anode with respect to a Pt cathode immersed both in 0.3M oxalic acid solution in order to investigate the self-ordering characteristics of the nanoporous structure. The pore structures, including interpore distance, pore size, pore density, and porosity as well as the ordering characteristic were analyzed using field-enhanced scanning electron microscopy (FE-SEM) and the corresponding Fourier-transformed images. The nanoporous structure could be produced for all the voltage conditions, but the well-ordered through-hole pore without a branched structure seemed to occur only at 40 and 140 V. It turned out that the growth rate under 140 V high-field anodization was about 40 times higher than under conventional 40 V mild anodization, which enabled the fast fabrication of self-ordered, high aspect ratio NAAMs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.282-290
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• 2020

In this article, we report the effect of blended cathode materials on the performance of all-solid-state lithium-ion batteries (ASLBs) with oxide-based organic/inorganic hybrid electrolytes. LiFePO₄ material is good candidates as cathode material in PEO-based solid electrolytes because of their low operating potential of 3.4 V; however, LiFePO₄ suffers from low electric conductivity and low Li ion diffusion rate across the LiFePO₄/FePO₄ interface. Particularly, monoclinic Li₃V₂(PO₄)₃ (LVP) is a well-known high-power-density cathode material due to its rapid ionic diffusion properties. Therefore, the structure, cycling stability, and rate performance of the blended LiFePO₄/Li₃V₂(PO₄)₃ cathode material in ASLBs with oxidebased inorganic/organic-hybrid electrolytes are investigated by using powder X-ray diffraction analysis, field-emission scanning electron microscopy, Brunauer-Emmett-Teller sorption experiments, electrochemical impedance spectroscopy, and galvanostatic measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.257-263
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• 2013

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.120-124
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• 2004

The protection performance and energy absorption capability are important for both MOAs for distribution lines and MOAs for high voltage systems, therefore the manufacturing technique of ZnO varistor elements with high ability against surge impacts is great important for high voltage systems. But until now ZnO varistors for low voltage class have been developed in Korea, ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems depend on an import from advanced countries, such as Japan or U.S.A, which have developed its in the late 1980s. So in the aspect of taking independent technique the development of ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems is important. In this research project ZnO varistor elements with diameters of 35mm and 70mm for the rate discharge current of 5, 10kA class for high voltage systems are manufactured, then various chemical composition and processing variables affected the electrical and the physical characteristics of these ZnO varistors are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.180-183
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• 2003

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.438-440
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• 2005

At present, characteristic of high color reproduction for LCD TV is needed in Display market according to start mass production of LCD TV. Therefore development target for LCD is focused on improvement of color reproduction. The improving methods of high color reproduction are alteration of color Filter or Red, Green, Blue phosphor alteration of CCFL. But decrease of luminance and panel transmittance is caused by alteration of Color Filter. Accordingly, we completed LCD with high color reproduction by the most suitable emission spectrum of CCFL phosphor at panel with conventional color filter. In this experiment, we knew that LCD applied to CCFL with high color rendering characteristic had color reproduction range of 81% compared with NTSC in CIE color coordinate. According to increase of intensity peak and alteration of Red, Green, Blue phosphor spectrum, we made LCD with high color reproduction characteristic. In conclusion we achieved improvement of color reproduction ratio by alteration of CCFL phosphor without changing color filter.

• Journal of Powder Materials
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• v.20 no.1
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• pp.53-59
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• 2013

Fe-TiC composite powder was fabricated via two steps. The first step was a high-energy milling of FeO and carbon powders followed by heat treatment for reduction to obtain a (Fe+C) powder mixture. The optimal condition for high-energy milling was 500 rpm for 1h, which had been determined by a series of preliminary experiment. Reduction heat-treatment was carried out at $900^{\circ}C$ for 1h in flowing argon gas atmosphere. Reduced powder mixture was investigated by X-ray Diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM) and Laser Particle Size Analyser (LPSA). The second step was a high-energy milling of (Fe+C) powder mixture and additional $TiH_2$ powder, and subsequent in-situ synthesis of TiC particulate in Fe matrix through a reaction of carbon and Ti. High-energy milling was carried out at 500 rpm for 1 h. Heat treatment for reaction synthesis was carried out at $1000{\sim}1200^{\circ}C$ for 1 h in flowing argon gas atmosphere. X-ray diffraction (XRD) results of the fabricated Fe-TiC composite powder showed that only TiC and Fe phases exist. Results from FE-SEM observation and Energy-Dispersive X-ray Spectros-copy (EDS) revealed that TiC phase exists uniformly dispersed in the Fe matrix in a form of particulate with a size of submicron.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.834-837
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• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.