• 제목/요약/키워드: High-k material

검색결과 10,630건 처리시간 0.042초

Interaction between Oxygens and Secondary Defects Induced in Silicon by High Energy $B^+$Ion Implantation and Two-Step Annealing

  • Yoon, Sahng-Hyun;Jeon, Joon-Hyung;Kim, Kwang-Tea;Kim, Hyun-Hoo;Park, Chul-Hyun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.185-186
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    • 2005
  • Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

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초전도에 작용하는 자기 Force (Superconducting magnetic Foce)

  • 이상헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.349-350
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    • 2009
  • Superconducting magnetic bearing and rotating system were developed by utilizing the high magnetization YBaCuO superconductor. The pellets prepared by quasi-melt process had a high magnetic levitation force and a high magnetic attractive force. The shaft also could be moves its position and orientation of the rotating axis freely. Is is essential to enhance the materials properties and to improve the system design for the application of the system to industrial purpose.

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Development of High Performance Multi-lobe Fluid Dynamic Bearings Using a Sintered Material

  • Tokushima, Hidekazu
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.379-380
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    • 2006
  • Recently, in spindle motors for hard disk drive (HDD) devices, fluid dynamic bearings (FDB) with herringbone grooves have come to be used instead of ball bearings due to the demand for high density recording of the devices etc. In this study, a 5-lobe bearing with high bearing stiffness using a sintered material was developed, and the bearing performance was examined by simulated calculations and experiments. As a result, it was clarified that the 5-lobe bearing had the required performance for practical use in the spindle motor for HDD

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High-k를 이용한 터널베리어 메모리의 절연막 특성 평가 (Electrical characteristic of insulator in tunnel-harrier memory using high-k)

  • 오세만;정명호;박군호;김관수;조영훈;정종완;정홍배;조원주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.262-263
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    • 2008
  • The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.

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리튬이차전지용 산화실리콘-흑연 복합체 고효율 음극의 전처리 특성 (Pretreatment of SiO/C Composite Anode of Lithium ion Secondary Battery for High coulombic Efficiency and High Specific Capacity)

  • 신혜민;;김동훈;정영동;김효석;도칠훈;진봉수;김현수;문성인;김기원;오대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.43-44
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    • 2007
  • SiO and graphite composite has been prepared by adopting high energy ball milling technique. The anode material shows high initial discharge and charge capacity values of 1138 and 568 mAh/g, respectively. Since the materials formed during initial discharge process the nano silicon/$Li_4SiO_3\;and\;Li_2O$ remains as interdependent, it may be expected that the composite exhibiting higher amount of irreversible capacity$(Li_2O)$ will deliver higher reversible capacity. In this study, pretreatment method of constant current-constant voltage (CC-CV) Provided high coulombic efficiency of SiO/C composite electrode removing the greater part of irreversible capacity.

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Fabrication of Ultra Fine β-phase Ti-Nb-Sn-HA Composite by Pulse Current Activated Sintering

  • Woo, Kee-Do;Wang, Xiaopeng;Kang, Duck-Soo;Kim, Sang-Hyuk;Woo, Jeong-Nam;Park, Sang-Hoon;Liuc, Zhiguang
    • 한국분말재료학회지
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    • 제17권6호
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    • pp.443-448
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    • 2010
  • The $\beta$ phase Ti-Nb-Sn-HA bio materials were successfully fabricated by high energy mechanical milling and pulse current activated sintering (PCAS). Ti-6Al-4V ELI alloy has been widely used as biomaterial. But the Al has been inducing Alzheimer disease and V is classified as toxic element. In this study, ultra fine sized Ti-Nb-Sn-HA powder was produced by high energy mechanical milling machine. The $\beta$ phase Ti-Nb-Sn-HA powders were obtained after 12hr milling from $\alpha$ phase. And ultra fine grain sized Ti-Nb-Sn-HA composites could be fabricated using PCAS without grain growth. After sintering, the microstructures and phase-transformation of Ti-Nb-Sn-HA biomaterials were analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). The relative density was obtained by Archimedes principle and the hardness was measured by Vickers hardness tester. The $\beta$-Ti phase was obtained after 12h milling. As result of hardness and relative density, 12h milled Ti-Nb-Sn-HA composite has the highest values.

금속 유기 분자 빔 에피택시로 성장시킨 $HfO_2$ 박막의 특성과 공정변수가 박막의 성장 및 특성에 미치는 영향 (Characteristics and Processing Effects Of $HfO_2$ Thin Films grown by Metal-Organic Molecular Beam Epitaxy)

  • 김명석;고영돈;남태형;정민창;명재민;윤일구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.74-77
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    • 2004
  • [ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

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로우스틸 마찰재의 마찰 및 마모특성에 미치는 구리계 재료의 영향 (Effects of Copper and Copper-Alloy on Friction and Wear Characteristics of Low-Steel Friction Material)

  • 정광기;이상우;권성욱;최성우;이희옥
    • Tribology and Lubricants
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    • 제36권4호
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    • pp.207-214
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    • 2020
  • In this study, we investigated the effects of copper and copper-alloy on the frictional and wear properties of low-steel friction material. The proportions of copper and copper-alloy in the brake friction materials used in passenger cars are very high (approximately 5-20% weight), and these materials have significant effects on friction and wear characteristics. In this study, the effects of cupric ingredients, such as the copper fiber and brass fiber, are investigated using the friction materials based on commercial formulations. After the copper and brass fibers from the same formulation were removed, the frictional and wear characteristics were evaluated to determine the influence of the copper and copper-alloy. We evaluated the frictional and wear characteristics by simulating various braking conditions using a 1/5 scale dynamometer. The results show that the friction material containing copper and brass fibers have excellent frictional stability and a low wear rate compared to the friction material that does not contain copper and brass fibers. These results are attributed to the excellent ductility, moderate melting point, high strength, and excellent thermal conductivity of copper and copper-alloy. We analyzed the surfaces of the friction materials before and after the performing the friction tests using a scanning electron microscope-energy dispersive X-ray spectroscope, confocal microscope, and roughness tester to verify the frictional behavior of copper and copper-alloy. In future studies, it will be applied to the development of copper-free friction materials based on the results of this study.

휴대단말기 무선전력 전송모듈용 전자기파 차폐소재 (Electromagnetic wave Shielding Materials for the Wireless Power Transfer Module in Mobile Handset)

  • 배석;최돈철;현순영;이상원
    • 한국자기학회지
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    • 제23권2호
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    • pp.68-76
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    • 2013
  • 자기유도형 기반의 무선전력 전송 기술을 이용한 무선충전 기능이 최근 스마트폰 등에 채용되어 주요한 소비자 편의기능으로 자리잡고 있다. 무선전력전송 모듈은 무선전력 전송효율을 개선하고 휴대폰 주요 회로부에 대한 전자기장 간섭을 억제하기 위하여 전자기장 차폐 소재의 사용이 필수적이다. 본 논문에서는 무선전력 전송모듈용 전자기장 차폐 소재의 역할과 기술에 대해 소개하였다. 이와 함께 향후 확산될 중급 전력(mid-power)과 대전력(high-power)영역의 무선전력 전송 응용분야에서 대응 가능한 차폐 소재의 개발 방향을 정리하였다.

Recent Progress in High-Luminance Quantum Dot Light-Emitting Diodes

  • Rhee, Seunghyun;Kim, Kyunghwan;Roh, Jeongkyun;Kwak, Jeonghun
    • Current Optics and Photonics
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    • 제4권3호
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    • pp.161-173
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    • 2020
  • Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 105 cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.