• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.437-440
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• 1999

The objective of this study is to deposited the preparation of SrTiO$_3$dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the substrate temperature. The current-voltage characteristics are influenced by the Schottky effict. The resistivity properties of films deposited on silicon substrates were very high resistivity. Conduction mechanisms in the films was dependent on the substrate temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.155-161
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• 2014

The present work is concerned with the formation behavior of anodic oxide films on Al7075 alloy under a galvanostatic condition in 20 vol.% sulfuric acid solution. The formation behaviour of anodic oxide films was studied by the analyses of voltage-time curves and observations of colors, morphologies and thicknesses of anodic films with anodization time. Hardness of the anodic oxide films was also measured with anodization time and at different positions in the anodic films. Six different stages were observed with anodiziation time : barrier layer formation (stage I), pore formation (stage II), growth of porous films (stage III), abnormal rapid oxide growth (stage IV), growth of non-uniform oxide films (stage V) and breakdown of the thick oxide films under high anodic voltages (stage VI). Hardness of the anodic oxide films appeared to decrease with increasing anodization time and with the position towards the outer surface. This work provides useful information about the thickness, uniformity, imperfections and hardness distribution of the anodic oxide films formed on Al7075 alloy in sulfuric acid solution.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.423-424
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• 2008

A facing target sputtering (FTS) equiment is fabricated and its process characteristics are investigated to search for the possibility of applications to film passivation system for organic light emitting diodes (OLEDs). We report that the FTS system can prepare a high quality $ZrO_2$ films with a dense micro structure and an excellent uniformity less than 5% and a high transmittance over an average 80% in the visible range. We suggest that the FTS is one of the suitable deposition techniques for the thin film passivation layer of OLEDs and the gas barrier layer of polymer substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.445-446
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• 2007

The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, rollto-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate (LEXAN(R)) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen, chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate (LEXAN(R)) films and its compatibility with OLED device fabrication processes.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.988-990
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• 2005

A 5.0-inch plastic TFT-LCD with the resolution of $400{\times}3{\times}300$ lines (120ppi) was developed. The device is a transmissive type with the transparent PES plastic substrates. The PES films with one side barrier coating were used for the device. In order to produce the high resolution display device, the alignments between all the layers for the TFT and CF are essential. The fundamental shrinkage effect and the thermal expansion behavior of the plastic substrates with and without the barrier coatings were studied. The proper annealing processes followed by immediate second bar-rier coating processes provide the optimal alignment between all the layers of the TFT and CF..

• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.187-190
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• 2002

Poly(vinyl alcohol) (PVA) is a representative hydrophilic and water-soluble polymer and widely employed in various applications such as fibers for clothes and industries, films, membranes, medicines for drug delivery system, and cancer cell-killing embolic materials. Moreover, PVA fibers, gels, and films are potentially high-performance materials because they have high tensile and impact strengths, high tensile modulus, high abrasion resistance, excellent alkali resistance, and oxygen barrier property which are superior to those of any known polymers[1,2]. (omitted)

• Food Science and Biotechnology
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• v.15 no.6
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• pp.925-930
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• 2006

Chitosan-based nanocomposite films were prepared using a solution intercalation method incorporating varying amounts of organically modified montmorillonite (Cloisite 30B) from 0 to 30 wt%. The nanocomposite films prepared were optically clear despite a slight decrease in the transmittance due to the spatial distribution of nanoclay. X-ray diffraction patterns indicated that a certain degree of intercalation or exfoliation formed when the amount of clay in the film was low and that microscale tactoids formed when the clay content in the sample was high (more than 10 wt%). The tensile strength (TS) of the chitosan film increased when the clay was incorporated up to 10 wt% and then decreased with further increases in the clay content of the film. The elongation at break (E) increased slightly upon the addition of low levels of clay up to 5 wt% and then decreased with further increases in the amount of the clay in the film. The water vapor permeability (WVP) decreased exponentially with increasing clay content. The water solubility (WS) and swelling ratio (SR) of the nanocomposite films decreased slightly, indicating that the water resistance of the chitosan film increased due to the incorporation of the nanoclay.