• Title/Summary/Keyword: High-Oxygen Concentration

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Effect of a Series Connection of a Bi-Electrolyte Hydrogen Sensor in a Leak Detector

  • Han, Hyeuk Jin;Park, Chong Ook;Hong, Youngkyu;Kim, Jong Suk;Yang, Jeong Woo;Kim, Yoon Seo
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.6-9
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    • 2015
  • Conventional leak detectors are widely based on helium gas sensors. However, the usage of hydrogen sensors in leak detectors has increased because of the high prices of helium leak detectors and the dearth in the supply of helium gas. In this study, a hydrogen leak detector was developed using solid-state hydrogen sensors. The hydrogen sensors are based on Park-Rapp probes with heterojunctions made by oxygen-ion conducting Yttria-stabilized zirconia and proton-conducting In-doped $CaZrO_3$. The hydrogen sensors were used for determining the potential difference between air and air balanced 5 ppm of $H_2$. Even though the Park-Rapp probe shows an excellent selectivity for hydrogen, the sensitivity of the sensor was low because of the low concentration of hydrogen, and the oxygen on the surface of the sensor. In order to increase the sensitivity of the sensor, the sensors were connected in series by Pt wires to increase the potential difference. The sensors were tested at temperatures ranging from $500-600^{\circ}C$.

Two-Phase Jet Flow Characteristics in the Pure Oxygen Aeration System Using Two-phase Jet Nozzle (이상 제트 노즐을 사용한 순산소 폭기시스템의 이상유동 특성)

  • Jung, Chan-Hee;Lee, Kye-Bock
    • Journal of Energy Engineering
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    • v.18 no.4
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    • pp.258-263
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    • 2009
  • Jet Loop Reactor(JLR), in which a two-phase nozzle is installed, is the new design technique for the treatment of high concentration wastewater by accelerating of oxygen contacting between substrate and surrounding bacteria. This numerical study of the two phase jet flow was conducted to find the optimum design of JLR. It was shown that there was a minimum velocity in the nozzle for continuous circulation of wastewater. The optimum location and the size of the draft tube for continuous circulation were examined. It was certain that the smaller the air size is, the more the effect of the mixing increases. The relation between the mixing effect and the turbulence was confirmed.

The Effects of Advanced Reburning with SNCR on NOx and CO Reduction (무촉매 환원법이 적용된 응용 재연소 방법에 의한 NOx와 CO의 저감 효과)

  • Lee Chang-Yeop;Kim Dong-Min;Baek Seung-Wook
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.30 no.8 s.251
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    • pp.788-795
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    • 2006
  • From the view of the environmental protection against the use of fossil fuels, the great of efforts have been exerted to find an effective method which is not only pollutant reduction but also high thermal efficiency. Reburning is a useful technology in reducing nitric oxide through injection of a secondary hydrocarbon fuel. In this paper, an experimental study has been conducted to evaluate the hybrid effects of reburning and selective non-catalytic reaction (SNCR) on $NO_x/CO$ reduction from oxygen-enriched LPG flame. Experiments were performed in flames stabilized by a co-flow swirl burner, which was mounted at the bottom of the furnace. Tests were conducted using LPG gas as main fuel and also as reburn fuel. The paper reported data on flue gas emissions, temperature distribution in furnace and various heat fluxes at the wall for a wide range of experimental conditions. Overall temperature in the furnace, heat fluxes to the wall and $NO_x$ generation were observed to increase by oxygen-enriched combustion, but due to its hybrid effects of reburning and SNCR, $NOx/CO$ concentration in the downstream has considerably decreased.

A New-Generation Fluorescent-Based Metal Sensor - iLOV Protein

  • Ravikumar, Yuvaraj;Nadarajan, Saravanan Prabhu;Lee, Chong-Soon;Rhee, Jin-Kyu;Yun, Hyungdon
    • Journal of Microbiology and Biotechnology
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    • v.25 no.4
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    • pp.503-510
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    • 2015
  • The iLOV protein belongs to a family of blue-light photoreceptor proteins containing a light-oxygen-voltage sensing domain with a noncovalently bound flavin mononucleotide (FMN) as its chromophore. Owing to advantages such as its small size, oxygen-independent nature, and pH stability, iLOV is an ideal candidate over other reporter fluorescent proteins such as GFP and DsRed. Here, for the first time, we describe the feasibility of applying LOV domain-based fluorescent iLOV as a metal sensor by measuring the fluorescence quenching of a protein with respect to the concentration of metal ions. In the present study, we demonstrated the inherent copper sensing property of the iLOV protein and identified the possible amino acids responsible for metal binding. The fluorescence quenching upon exposure to Cu2+ was highly sensitive and exhibited reversibility upon the addition of the metal chelator EDTA. The copper binding constant was found to be 4.72 ± 0.84 µM. In addition, Cu2+-bound iLOV showed high fluorescence quenching at near physiological pH. Further computational analysis yielded a better insight into understanding the possible amino acids responsible for Cu2+ binding with the iLOV protein.

Discharge Properties of Torch-Type Atmospheric Pressure Plasma and Its Local Disinfection of Microorganism (토치형 상압 플라즈마의 방전특성과 미생물의 국부 살균효과)

  • Son, Hyang-Ho;Lee, Won-Gyu
    • Korean Chemical Engineering Research
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    • v.49 no.6
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    • pp.835-839
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    • 2011
  • The characteristics of torch-type atmospheric pressure plasma and its sterilization effects have been analyzed. The length of plasma flame was varied with the level of applied voltage and the mixture gases composed of argon and oxygen. The effect of plasma flame on the temperature increase of surface treated was limited to $43^{\circ}C$ as a maximum temperature under exposing time of 10 min. The sterilization for E. coli was strongly affected by the applied voltage, the oxygen ratio in the mixture gas and the treatment time. At a high concentration of ozone, the increase of treatment time under the direct contact with plasma flame yields to maximize the effect of the sterilization on E. coli.

The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure (스퍼터 증착된 Zinc Tin Oxide 박막 트랜지스터의 공정 압력에 따른 특성 연구)

  • Lee, Hong Woo;Yang, Bong Seob;Oh, Seungha;Kim, Yoon Jang;Kim, Hyeong Joon
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.1
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    • pp.43-49
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    • 2014
  • Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

A Study on the Stream Pollution Analysis (하천오염분석에 관한 연구)

  • 김건흥
    • Water for future
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    • v.19 no.4
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    • pp.321-328
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    • 1986
  • Bottom sediment-river water samples were studied to determine the extent of biodegradable matter and to examine the reduction of COD, TKN and TOC by using of warburg and aerated batch reactor. Warburg studies were conducted to study the Oxygen Uptake Rates, Reaction Rate Constants and CBOD. Bacth reator studies were conducted to determine the reduction of COD, TKN and TOC. Results from the batch recator study indicate high concentration of COD in samples. Less than 10 precent of the Organic Carbon was found to be biodegradable in 48 hours of Warburg experiment. Appreciable Immediate Oxygen Demand of sediments suggests that dredging of the river bottom is likely to deplete dissolved significantly in the river water.

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A Study on the Fabrication and Characteristics of ITO thin Film Deposited by the Ionized Cluster Beam Deposition (Ionized Cluster Beam 증착방법을 이용한 Indium-Tin-Oxide(ITO) 박막의 제작과 그 특성에 관한 연구)

  • 최성창;황보상우;조만호;김남영;홍창의;이덕형;심태언;황정남
    • Journal of the Korean Vacuum Society
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    • v.5 no.1
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    • pp.54-61
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    • 1996
  • Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

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Structural and electrical properties of high temperature deposited epitaxial ZnO thin film by RF magentron sputtering (RF 마그네트론 스퍼터일 법으로 증착된 에피택셜 ZnO 박막의 구조적, 전기적 특성)

  • Kim, Dong-Hun;Cho, Nam-Gyu;Park, Hun;Kim, Ho-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.184-185
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    • 2007
  • We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

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Factors affecting nitrite build-up in an intermittently decanted extended aeration process for wastewater treatment (하수처리를 위한 간헐 방류식 장기폭기 공정에서 아질산염의 축적에 영향을 미치는 인자)

  • Ahn, Kyu-Hong;Park, Ki-Young;Lee, Hyung-Jib
    • Journal of Korean Society of Water and Wastewater
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    • v.13 no.1
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    • pp.51-60
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    • 1999
  • An intermittently-aerated, intermittently-decanted single-reactor process (KIDEA process : KIST intermittently decanted extended aeration process) was applied for nitrogen removal from wastewater. Synthetic wastewater with chemical oxygen demand (COD): nitrogen (N) ratio of approximately 5.25: 1 was used. The average COD removal efficiency reached above 95%, and under optimal conditions nitrogen removal efficiency also reached above 90%. This process consisted of 72 minute aeration, 48 minute settling and 24 minute effluent decanting with continuous feeding of influent wastewater from the bottom of the reactor, and did not require a separate anoxic mixing-phase. In this process, nitritation ($1^{st}$ step of nitrification) was induced but nitratation($2^{nd}$ step of nitrification) was suppressed. Main factors responsible for the accumulation of nitrite ion in the experimental condition were free ammonium and dissolved oxygen. This condition of nitrite build-up accelerated by continuous feed flow in the bottom of the KIDEA reactor because of high concentration of ammonia nitrogen in the influent. This research provides one of answers to control nitrate build-up.

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