• 동의신경정신과학회지
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• 제4권1호
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• pp.99-119
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• 1993

In order to compare and examine the effect the effect of Kuibitang, Kamiondarmtang and Kuibiondarmtang against stress, I induced immobilization stress by binding rats for 200mins under a little anesthetized with ether. I classified as normal group, control group which administrated 0.9% NaCl solution, sample A group which administrated Kuibitang, sample B group which administrated Kamiondarmtang and sample C group which administrated Kuibiondarmtang. I got some conclusions by measuring amounts of norepinephrine, epinephrine, triiodothyronine($T_3$) and thyroxine($T_4$) in 1, 3 and 5 days, respectively. 1. Norepinephrine showed high meaningful decrease after 1. 3 and 5 days in sample A group. It showed little decrease in sample B group. It showed a little meaningful decrease after 1 day and high meaningful decrease after 3 and 5 days in sample C group. 2. Epinephrine showed high meaningful decrease after 3 and 5 days in sample A group. It showed little decrease in sample B group. It showed a little meaningful decrease after 3 days and high meaningful decrese after 5 days in sample C group. 3. Triiodothyronine($T_3$) inclined to approach normal value in sample A, B, C group in comparision wit control group but didn't have high meaning. 4. Thyroxine($T_4$) inclined to approach normal va1ue in sample A, B, C group in comparision with contrl group but didn't have high meaning. As I consider the effect of experiments, I think that Kuibitang and Kuibiondarmtang have some effects against stress and it is right to apply to the treatment of stress.

• 공업화학
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• 제1권2호
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• pp.240-248
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• 1990

$C_9$ aromatics의 transakylation에 대한 금속담지 H-mordenite의 촉매활성 및 선택도에 관한 실험이 고압의 연속흐름 고정층 반응기에서 수행되었다. 니켈담지 H-mordenite(T-Ni) 촉매는 높은 활성을 나타내었으며, 이 활성의 감소속도가 느렸다. 몰리브덴 및 니켈이 담지된 H-mordenite(T-NiMo) 촉매도 높은 활성을 나타내었으며, 탄화수소의 탄화를 억제하였다. T-Ni 및 T-NiMo 촉매의 선택도는 실험범위 내에서 반응온도가 증가함에 따라 감소하였지만, 상업적으로 사용되는 T촉매의 선택도는 반응온도가 증가함에 따라 서서히 증가하였다. 촉매의 초기활성 및 활성감소 측면에서는 T-Ni 및 T-NiMo 촉매의 성능이 T촉매보다 우수하였으며, 몰리브덴의 첨가는 T-Ni 촉매의 안정성을 다소 개선하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.498-499
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• 2002

In In order to develop liquid crystal mixtures of high response time and high nematic-isotropic transition temperature ($T_{NI}$) for LCD-TV application, novel liquid crystal molecules with a fluoro-isothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ over 200 $^{\circ}C$, wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy of 14 and high optical anisotropy of 0.19. New LC Mixtures of the high $T_{NI}$ ($85{\sim}100 ^{\circ}C$) and fast response time ($8{\sim}10ms$) were blended with the novel fluoro-isothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. It was also studied on optimum pitch of liquid crystal for high speed twisted nematic LCD-TV applicaton. The LC mixtures show a fast speed of the below one frame rate in real 17" TV panel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.413-414
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• 2002

In In order to develop liquid crystal mixtures of high response time and high nematic-isotropic transition temperature ($T_{NI}$) for LCD-TV application, novel liquid crystal molecules with a fluoroisothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ over 200 $^{\circ}C$, wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy of 14 and high optical anisotropy of 0.19. New LC Mixtures of the high $T_{NI}$ (85${\sim}$100 $^{\circ}C$) and fast response time (8${\sim}$10ms) were blended with the novel fluoroisothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. It was also studied on optimum pitch of liquid crystal for high speed twisted nematic LCD-TV applicaton. The LC mixtures show a fast speed of the below one frame rate in real 17" TV panel.

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 한국동물학회지
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• 제26권3호
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• pp.211-217
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• 1983

한국인집단에서 Transferrin C subtypes와 Haptoglobin polymorphism의 분포 및 유전자 빈도에 관한 본 연구에서 얻은 결과는 다음과 같다. 제주집단에서 관찰된 Transferrin C subtypes은 주로 $T_{f}C_{1}, T_{f}C_{2}$ 및 $T_{f}C_{1}-C_{2}$형이었는데 $T_{f}C_{1}$과 $T_{f}C_{1}-C_{2}$이 51%와 42%로 나타났으며, 유전자 빈도는 $T_{f}C^{1}, T_{f}C^{2} 및 T_{f}D^{Jeju}$가 각각 0.7220, 0.2743 및 0.0037이었다. Haptoglobin의 유전자 빈도는 서울집단에서 460명, 제주집단에서 502명을 대상으로 추정한 결과 서울집단에서 $Hp^1 = 0.304, Hp^2 = 0.696$이었고, 제주집단에서는 0.269와 0.731이었으며 두 집단사이에 빈도 차이는 유의하지 않았다.

• 한국자기학회지
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• 제26권6호
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• pp.201-205
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• 2016

본 연구에서는 터널링 자기저항(TMR) 소자의 임피던스 스펙트럼을 측정하였으며, 절연체 장벽에 의한 터널링 저항($R_T$)과 터널링 전기 용량을 갖는 축전기($C_T$)가 병렬로 연결된 등가회로를 활용하여 TMR 소자의 완화 특성을 분석하였다. 두 자성체의 자화가 반평행 및 평행 상태일 때 모두 완화 주파수는 교류 전압에 따라 증가하는 경향을 보였다. 스펙트럼 측정 결과로부터 도출한 $R_T$는 TMR소자의 전형적인 바이어스 전압 의존성을 보였으나, $C_T$는 기하학적인 전기 용량에 비하여 약 4,500배 이상 증가하였다. 이러한 $C_T$의 거대한 증가는 TMR 소자의 고속 동작을 제한하는 요소로 작용하므로, 고속 동작을 요구하는 TMR 소자는 초고용량 $C_T$의 특성을 설계에 반영하여야 한다.

• 전기저널
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• 5호통권113호
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• pp.24-27
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• 1986

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.17-17
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• 2009

Piezoelectric single crystals in the ternary MPB PMN-PZ-PT system with high $T_cs$ ($T_c$ > $200\sim300^{\circ}C$) and $E_cs$($E_c$>5~10 kV/cm) were fabricated by the cost-effective solid-state crystal growth (SSCG) technique. Chemically uniform PMN-PZT single crystals were successfully grown up to 60 mm by the SSCG method and their dielectric and piezoelectric properties characterized. Compared to Bridgman PMN-PT single crystals, the high $T_c/E_c$ PMN-PZT single crystals were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus become best candidates for medical transducers, actuators, and naval applications.

• 한국표면공학회지
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• 제29권5호
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.