• Journal of Oriental Neuropsychiatry
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• v.4 no.1
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• pp.99-119
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• 1993

In order to compare and examine the effect the effect of Kuibitang, Kamiondarmtang and Kuibiondarmtang against stress, I induced immobilization stress by binding rats for 200mins under a little anesthetized with ether. I classified as normal group, control group which administrated 0.9% NaCl solution, sample A group which administrated Kuibitang, sample B group which administrated Kamiondarmtang and sample C group which administrated Kuibiondarmtang. I got some conclusions by measuring amounts of norepinephrine, epinephrine, triiodothyronine($T_3$) and thyroxine($T_4$) in 1, 3 and 5 days, respectively. 1. Norepinephrine showed high meaningful decrease after 1. 3 and 5 days in sample A group. It showed little decrease in sample B group. It showed a little meaningful decrease after 1 day and high meaningful decrease after 3 and 5 days in sample C group. 2. Epinephrine showed high meaningful decrease after 3 and 5 days in sample A group. It showed little decrease in sample B group. It showed a little meaningful decrease after 3 days and high meaningful decrese after 5 days in sample C group. 3. Triiodothyronine($T_3$) inclined to approach normal value in sample A, B, C group in comparision wit control group but didn't have high meaning. 4. Thyroxine($T_4$) inclined to approach normal va1ue in sample A, B, C group in comparision with contrl group but didn't have high meaning. As I consider the effect of experiments, I think that Kuibitang and Kuibiondarmtang have some effects against stress and it is right to apply to the treatment of stress.

• Applied Chemistry for Engineering
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• v.1 no.2
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• pp.240-248
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• 1990

The catalytic activity and selectivity of metal loaded H-mordenite for transalkylation of $C_9$ aromatics were studied in a continuous flow fixed bed reactor under high pressure. Nickel loaded H-mordenite(T-Ni) catalyst showed high activity and slow decay of activity. Molybdenum and nickel loaded H-mordenite(T-NiMo) catalyst also showed high activity and suppressed coking of hydrocarbons. The selectivity of xylene for T-Ni and T-NiMo catalysts decreased with temperature, but that for T catalyst(commercial grade) monotonically increased with temperature within the experimental range. The performance of T-Ni and T-NiMo catalysts was better than that of T catalyst in terms of initial activity and its decay. The addition of Mo improved slightly stability of T-Ni catalyst.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.498-499
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• 2002

In In order to develop liquid crystal mixtures of high response time and high nematic-isotropic transition temperature ($T_{NI}$) for LCD-TV application, novel liquid crystal molecules with a fluoro-isothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ over 200 $^{\circ}C$, wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy of 14 and high optical anisotropy of 0.19. New LC Mixtures of the high $T_{NI}$ ($85{\sim}100 ^{\circ}C$) and fast response time ($8{\sim}10ms$) were blended with the novel fluoro-isothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. It was also studied on optimum pitch of liquid crystal for high speed twisted nematic LCD-TV applicaton. The LC mixtures show a fast speed of the below one frame rate in real 17" TV panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.413-414
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• 2002

In In order to develop liquid crystal mixtures of high response time and high nematic-isotropic transition temperature ($T_{NI}$) for LCD-TV application, novel liquid crystal molecules with a fluoroisothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ over 200 $^{\circ}C$, wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy of 14 and high optical anisotropy of 0.19. New LC Mixtures of the high $T_{NI}$ (85${\sim}$100 $^{\circ}C$) and fast response time (8${\sim}$10ms) were blended with the novel fluoroisothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. It was also studied on optimum pitch of liquid crystal for high speed twisted nematic LCD-TV applicaton. The LC mixtures show a fast speed of the below one frame rate in real 17" TV panel.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• The Korean Journal of Zoology
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• v.26 no.3
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• pp.211-217
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• 1983

Genetic polymorphism of transferrin $(T_f)$ subtypes in Jeju population was studied by isoelectric focusing of human sera on polyacrylamide gels under high voltage, and haptolobin (Hp) polymorphism in Seoul and Jeju population was studied by polyacrylamide gel electrophoresis. Among 946 normal samples, three common types of transferrin, $T_{f}C_{1}, T_{f}C_{1}-C_{2} and T_{f}C_{2}$ were observed with some variants migrating slower than $T_{f}C$ subtypes, while among 139 patient (hepatitis) samples, only three common types were found. The gene frequencies were calculated as follows; in normal population, $T_{f}C^{1}$ was 0.7220; $T_{f}C^{2}, 0.2743; T_{f}D^{Jeju}, 0.0037$, and in patient population, $T_{f}C^{1} was 0.7194; T_{f}C^{2}, 0.2806$ respectively. Among 460 samples in Seoul and 502 in Jeju population, three types of haptoglobin, Hp 1-1, Hp 2-1 and Hp 2-2 were observed. The gene frequency of $Hp^1$ was 0.304, $Hp^2$, 0.696 in Seoul and in Jeju, $Hp^1$ was 0.269 and $Hp^2$, 0.731, respectively. The frequencies of the genes and the polymorphic phenotypes were discussed comparatively with the other populations.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.201-205
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• 2016

In this report, we measured the impedance spectrum in TMR device, and the relaxation behavior of the real and imaginary impedance spectrum was analyzed by using the equilibrant circuit of tunneling capacitance ($C_T$) and tunneling resistance ($R_T$). The relaxation frequency was increased with AC voltage in both the parallel and antiparallel alignment of two magnetic layers. The $R_T$ with AC voltage showed the typical bias voltage dependence. However, the $C_T$ showed large value than the expected geometrical capacitance. The huge increase of $C_T$ was affecting as a limiting factor for the high speed operation of TMR devices. Thus, the supercapacitance of $C_T$ should be considered to design the high speed TMR devices.

• JOURNAL OF ELECTRICAL WORLD
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• no.5 s.113
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• pp.24-27
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• 1986

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.17-17
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• 2009

Piezoelectric single crystals in the ternary MPB PMN-PZ-PT system with high $T_cs$ ($T_c$ > $200\sim300^{\circ}C$) and $E_cs$($E_c$>5~10 kV/cm) were fabricated by the cost-effective solid-state crystal growth (SSCG) technique. Chemically uniform PMN-PZT single crystals were successfully grown up to 60 mm by the SSCG method and their dielectric and piezoelectric properties characterized. Compared to Bridgman PMN-PT single crystals, the high $T_c/E_c$ PMN-PZT single crystals were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus become best candidates for medical transducers, actuators, and naval applications.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.