• Composites Research
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• v.32 no.6
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• pp.301-306
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• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

• Journal of Korean Tunnelling and Underground Space Association
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• v.16 no.4
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• pp.403-415
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• 2014

Recently, the temperature rise in the summer due to climate change, power usage is increasing rapidly. As a result, power generation facilities have been newly completed and the need for ultra-high-voltage transmission line for power transmission of electricity to the urban area has increased. The mechanized tunnelling method using a shield TBM have an advantage that it can minimize vibrations transmitted to the ground and ground subsidence as compared with the conventional tunnelling method. Despite the popularity of shield TBM for cable tunnel construction, study on the mechanical behavior of cable tunnel driven by shield TBM is insufficient. Thus, in this study, the effect of fractured zone ahead of tunnel face on the mechanical behavior of the shield TBM cable tunnel is investigated. In addition, it is intended to compare the behavior characteristics of the fractured zone with continuous model and applying the interface elements. Tunnelling with shield TBM is simulated using 3D FEM. According to the change of the direction and magnitude of the fractured zone, Sectional forces such as axial force, shear force and bending moment are monitored and vertical displacement at the ground surface is measured. Based on the stability analysis with the results obtained from the numerical analysis, it is possible to predict fractured zone ahead of the shield TBM and ensure the stability of the tunnel structure.

• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.218-220
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• 1999

The performance of the Electric Vehicle and Hybrid Electric Vehicle depends on that of the battery pack composed of series connected batteries. And thermal property is one of the main factors which decide the performance of the battery pack. So heat generation rate from the battery under the various driving mode must be measured as precise as possible because thermal characteristics of the battery affect the driving performance and battery pack's life cycle. Besides, to design and develop the battery thermal management system for the EV and HEV, the measurements of the thermal properties of the batteries are needed. However, the established calorimeter is not adequate to test an EV's battery because its cavity is too small to accommodate the EV's battery. Therefore we developed the calorimeter to test the thermal property of the EV's battery. Its cavity size is 120mm long, 75mm wide and 200mm high. The calorimeter is calibrated by the dummy cell which generates the heat rate from zero to 200W. The measuring accuracy of the calorimeter is within $2\%$ and its voltage stability is 2.5mV in the constant temperature bath.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.10
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• pp.591-598
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• 2017

Power overshoot phenomenon was observed in microbial fuel cells (MFCs) used non-catalyzed graphite felt as cathode. Voltage loss in MFCs was mainly caused by cathode potential loss. Cheap stainless steel scrubber, which has high conductivity, and Pt/C coated graphite felt as cathode were used for overcoming power overshoot and reducing the cathode potential loss in MFCs. The MFCs used stainless steel scrubber showed no power overshoot even slow catholyte flow rate and produced 29% enhanced maximum current density ($23.9A/m^3$) than MFCs used non-catalyzed graphite felt while the power overshoot phenomenon was existed in Pt/C coated MFCs. Increasing catholyte flow rate resulted in disappearing power overshoot of MFCs used non-catalyzed graphite felt. In addition, maximum power density and current density of both MFCs used non-catalyzed graphite felt and stainless steel scrubber increased by 2-3.5 times. Cathode potential losses in all region of activation loss, ohmic loss, and mass transport loss were reduced according to increase of catholyte flow rate. Therefore, stainless steel scrubber has advantages that are economical materials as electrode and prevents power overshoot, leading to enhance electricity generation. In addition, increasing catholyte flux is one of great solution when power overshoot caused by cathodic overpotential is observed in MFCs.