• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.390-396
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• 1998

Neutral stream was generated from Helicon plasma source and was applied to etch silicon for the purpose of preventing physical and electrical damages from the bombardment of charged particles with high translation energy. By installing a permanent magnet and applying positive bias beneath the substrate, the cusp-magnetic and electric fiddles were generated in order to remove the charged particles from the downstream plasma. As a result, the electron density and ion density in the vicinity of the substrate were reduced by 1/1000 and 1/10, respectively. The directional etching of silicon was observed and the etch rate was found to be very low to below 100 $\AA$/min at a pressure of $8.5{\times}10^{-4}$ Torr, when $Cl_2$ and 10% $SF_{sigma}$ etchant gases were used.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.222-228
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• 2005

Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.161-168
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• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.358-358
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• 2010

Ion beam bombardment at low energy forms nanosize patterns such as ripples, dots or wrinkles on the surface of polymers in ambient temperature and pressure. It has been known that the ion beam can alter the polymer surface that induces skins stiffer or the density higher by higher compressive stress or strain energies associated with chain scissions and crosslinks of the polymer. Atomic scale structure evolution in polymers is essential to understand a stress generation mechanism during the ion beam bombardment, which governs the nanoscale surface structure evolution. In this work, Molecular Dynamics (MD) simulations are employed to characterize the phenomenon occurred in bombardment between the ion beam and polymers that forms nanosize patterns. We investigate the structure evolution of Low Density Polyethylene (LDPE) at 300 K as the polymer is bombarded with Argon ions having various kinetic energies ranging from 100 eV to 1 KeV with 50 eV intervals having the fluence of $1.45\;{\times}\;1014 #/cm2$. These simulations use the Reactive Force Field (ReaxFF), which can mimic chemical covalent bonds and includes van der Waals potentials for describing the intermolecular interactions. The results show the details of the structural evolution of LDPE by the low energy Ar ion bombardment. Analyses through kinetic and potential energy, number of crosslinks and chain scissions, level of local densification and motions of atoms support that the residual strain energies on the surface is strongly associated with the number of crosslinks or scissored chains. Also, we could find an optimal Ar ion beam energy to make crosslinks well.

• Fire Science and Engineering
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• v.30 no.1
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• pp.104-110
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• 2016

Positive displacement pumps with high pressure and water capacity are used large fires in various high-rise buildings. This study provides information for a performance approval standard of fire pumps for fire trucks based on centrifugal pump standards enacted in 2012. An experiment was conducted with a positive displacement pump for three levels of performance from the approval standard (V-1, 2, and 3). The efficiency of the pump was included in the reference, which requires the approval of 65% performance, the same as a centrifugal pump. The water pressure is between 1.5 and 2.5 MPa, and the required flow rate was established as at least $0.31m^3/min$ and up to $3.0m^3/min$. A relief valve was added to adjust the shut-off pressure due to the structural characteristics of the positive displacement pump. A strainer was also installed to prevent damage to the inside of the pump due to foreign matter. However, the strainer includes a difference from the positive displacement pump to operate without a vacuum pump and the centrifugal pump. This is due to the additional approval standard portion of the positive displacement pump, which is expected to be selected for more variety of fire-fighting equipment and proactive responses to fire suppression in a high-rise buildings and large fires. In conclusion, this approval standard was enacted in January 2016.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Journal of Powder Materials
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• v.18 no.2
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• pp.141-148
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• 2011

Carbon material shows relatively high strength at high temperature in vacuum atmosphere and can be easily removed as CO or $CO_2$ gas in oxidation atmosphere. Using these characteristics, we have investigated the applicability of carbon mold for precision casting of high melting point metal such as nickel. Disc shape carbon mold with cylindrical pores was prepared and Ni-base super alloy (CM247LC) was used as casting material. The effects of electroless Nickel plating on wettability and cast parameters such as temperature and pressure on castability were investigated. Furthermore, the proper condition for removal of carbon mold by evaporation in oxidation atmosphere was also examined. The SEM observation of the interface between carbon mold and casting materials (CM247LC), which was infiltrated at temperature up to $1600^{\circ}C$, revealed that there was no particular product at the interface. Carbon mold was effectively eliminated by exposure in oxygen rich atmosphere at $705^{\circ}C$ for 3 hours and oxidation of casting materials was restrained during raising and lowering the temperature by using inert gas. It means that the carbon can be applicable to precision casting as mold material.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.634-640
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• 2002

To improve the ductility of mTEX>$(Al +12.5%Cu)<_3$Zr intermetallics, which are the potential high temperature structural materials, the mechanical alloying behavior, the effect of pressure and temperature on the $Ll_2$, phase formation and the behavior of the cold isostatic press and sintering were investigated. However mechanically alloyed A1$_3$Zr alloy have been known to have high mechanical strength even at high temperature, its workability was poor. A method of solution is refined grain size and phase transformation from $DO_{23}$ to $Ll_2$.$ Ll_2$ structure TEX>$(Al+12.5%Cu)<_3$Zr with nanocrystalline microstructure intermetallic powders where were prepared by mechanical alloying of elemental powders. Grain sizes of the as milled powders were less than 10nm (from transmission electron microscopy, TEM). Thermal analyses showed that $Ll_2$ structure was stable up to$ 800^{\circ}C$ for 1hour $(Al+ 12.5%Cu)<_3$Zr. $(Al+12.5%Cu)<_3$Zr has been consolidated by cold isostatic pressing (CIP 138, 207, 276, 414MPa) at room temperature and subsequent heat treatment at high temperatures where $Ll_2$ structure was stable under vacuum atmosphere. The results showed that 94.2% density of Ll$_2$ compacts was obtained for the (Al +12.5%Cu)$_3$Zr by sintering at 80$0^{\circ}C$ for 1hour (under CIPed 207MPa). This compact of the grain size was 40nm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.3
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• pp.622-628
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• 2016

As the suction pad-supporting bike carrier attached to a car may be subject to an excessive dynamic load due to random vibrations and centrifugal forces during driving, its structural safety is of great concern. To examine this, the finite-element method with a fluid-structure interaction should be used because the pressure on the pad bottom is changed in real time according to the fluctuations of the force or the moment applied on the pad. This method, however, has high computing costs in terms of modeling efforts and software expense. Moreover, the accuracy of computation is not easily guaranteed. Therefore, a new method combining the experiment and computation is proposed in this paper: the bottom pressure and contact area of the pad under varying loads was measured in real time and the acquired data are then used in the nonlinear elastic finite-element calculations. The computational and experimental results obtained with the product under development showed that the safety margin of the pad under the axial loading is relatively sufficient, whereas with an excessive rotational loading, the pad is vulnerable to separation or a local surface damage; hence, the safety margin may not be secured. The predicted contact behavior under the variation of the magnitude and type of the loading were in good agreement with the one from the experiment. The proposed analysis method in this study could be used in the design of similar vacuum pad systems.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.361-366
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• 2011

An in-situ, real-time monitoring of GaN epilayers grown by low pressure metalorganic chemical vapor deposition system modified for spectral reflectance was performed. Reflectance spectrums from 190~861 nm were observed using p-polarized light with incident angle of $75^{\circ}$. All reflectance spectrums showed interference oscillation caused by multiple reflection within GaN epilayers, and the spectrum from GaN with low crystalline quality showed weak reflectance intensity and much low amplitude of the oscillation because many defects in GaN resulted in light scattering and absorption. Signal variation of reflected light which was selected around strong constructive wavelength range was also observed during $NH_3$ supplying and $NH_3$ cut-off. There was no significant change in signal intensity when $NH_3$ cut-off for 10 sec, but it showed higher intensity when $NH_3$ was cut off for over 30 sec and its intensity kept unchanged. This result indicates that GaN surface was N-terminated during $NH_3$ supplying but Ga-terminated during $NH_3$ cut-off because of high nitrogen equilibrium vapor pressure of GaN, and metallic Ga-terminated surface caused slightly higher reflectance intensity.