• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1016-1022
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• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.42-48
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• 2020

As global warming accelerates, eco-friendly electric cars are being developed to reduce carbon dioxide emissions, and power conversion inverters are used to drive motors. Among inverter components, DC-link capacitor is heated by high current usage, which causes problems such as performance and life-saving of inverter. Although metal cases with good thermal performance have been used to solve this problem, it is difficult to apply them in practice due to insulation problems with other parts. In this paper, the Heat-Generation influence factor of DC-link capacitor is analyzed. Variables on heat-generation are set at 3 levels for film width, inductance, and film thickness. Box-Behnken to 13 tests using the design and minimal deviations, e.g. through the experiment three times by each level. The surface of the film k type by attaching the sensor current is measured temperature. Capacitance was set to a minimum level of 200 ㎌ and had a frequency of 16 kHz with Worst case, ambient temperature of 85℃ and a ripple current of 50 Ams was applied. The temperature at the measurement point was collected in the data logger after sampling at 1 minute intervals for 2 hours after saturation with the ambient temperature. This experiment confirmed that setup factors are correlated with heat-generation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.634-639
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• 2001

In this paper, we discuss optimum process conditions of Hemispherical Grained Silicon formation for high density DRAM'S capacitor. In optimum process renditions, the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53$0^{\circ}C$ and 40(equation omitted), respectively. in the 64M bit DRAM capacitor using optimum process conditions, limit thickness of nitride is about 65(equation omitted). The results obtained in this study are applicable to process control and HSG-Si formation for high reliability and high density DRAM's capacitor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.326-334
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• 2010

Porous and net-shaped tantalum powder for a capacitor was formulated in a SHS (self-propagating high-temperature synthesis) process. However, this powder, which has weak strength among its particles and low flow ability, cannot be used for a capacitor. Therefore, this powder was sintered in a high-vacuum furnace to increase agglomeration to improve the flow ability, bonding strength among the particles, and shrinkage during pellet sintering. Finally, it was deoxidated with 2 wt% Mg powder to remove the increased surface oxygen that arose during the sintering process. The final product was analyzed in terms of its chemical and physical properties and was compared with a commercial powder used by a capacitor manufacturer.

• Journal of Applied Reliability
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• v.16 no.3
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• pp.238-244
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• 2016

Purpose: Domestic electric railway Regenerative Energy Storage System seriously affects the maintenance cost of the total operating expenses of nearly 60% of the total LCC (Life Cycle Cost) due to high dependence on foreign Leading company. Therefore by developing the system, it is important to lower the maintenance cost in the domestic supply. This study about the capacitor Reliability test and the purpose of this study is development electric railway Regenerative Energy Storage System. Methods: In case of, having a close relation between the temperature and the reaction rate, Accelerated Model was known that according to Arrhenius' law of chemical activity. If you apply this formula in using allowable temperature range of the capacitor can induce the Arrhenius empirical formula used in much Manufacture Fields. We evaluate the capacitors Leading company through the Arrhenius model. in order to providing a base for the localization of Ultra Capacitor. Conclusion: In this paper, we conducted a reliability test. And it was performed by the accelerated life test and Cycle Test with temperature and C-rate. and then MTBF and B10 life are estimated by analyzing the accelerated life test result. This is thought to need detailed study applying complex stress than about whether it matches the actual behavior in electric railway.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.1-5
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• 2017

Many microelectronic devices are miniaturizing the capacitance density and the size of the capacitor. Along with this miniaturization of electronic circuits, tantalum (Ta) capacitors have been on the market due to its large demands worldwide and advantages such as high volumetric efficiency, low temperature coefficient of capacitance, high stability and reliability. During a tantalum capacitor manufacturing process, arc welding has been used to weld base frame and sub frame. This arc welding may have limitations since the downsizing of the weldment depends on the size of welding electrode and the contact time may prevent from improving productivity. Therefore, to solve these problems, this study applies laser spot welding to weld nickel (Ni) and Au-Sn-Ni alloy using CW IR fiber laser with lap joint geometry. All laser parameters are fixed and the only control variable is laser irradiance time. Four different shapes, such as no melting upper workpiece, asymmetric spherical-shaped weldment, symmetric weldment, and, excessive weldment, are observed. This shape may be due to different temperature distribution and flow pattern during the laser spot cutting.

• Korean Journal of Metals and Materials
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• v.47 no.6
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• pp.338-343
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• 2009

The purpose of this study is to make the tantalum powder for solid electrolyte capacitor with SHS (self-propagating high-temperature synthesis) process. Raw materials for manufacturing Ta powder were used $Ta_{2}O_{5}$, Mg and NaCl. While progressing SHS process, $Ta_{2}O_{5}$ powder was reduced by Mg powder. The combustion temperature and velocity were easily controled by the varying mole ratio of NaCl, Mg and initial reaction pressure. In the case of only using NaCl as an inorganic agent, the shape is unagglomerated and has high surface area. whereas we were given the powder which has good net structure by the addition of excessive Mg as a diluent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• Proceedings of the Safety Management and Science Conference
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• 1999.11a
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• pp.345-354
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• 1999

A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.