Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2001.10a
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- Pages.634-639
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- 2001
A Study on the Optimum Process Conditions of Hemispherical trained Silicon formation for High Density DRAM'S Capacitor
고밀도 DRAM 캐패시터에서 HSG-Si형성의 공정최적화에 관한 연구
Abstract
In this paper, we discuss optimum process conditions of Hemispherical Grained Silicon formation for high density DRAM'S capacitor. In optimum process renditions, the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53
Keywords